JSMSEMI-IRLML6401TRPBF
| Part # | JSMSEMI-IRLML6401TRPBF |
Download  | JSMSEMI-IRLML6401TRPBF |
IRLML6401TR
P-Channel 12-V (D-S) MOSFET
-12
V P-Channel
MOSFET
D
I
D
M
ax
V
(BR)DSS
R
DS(on)
Typ
–
4
.
2
A
–
1
2V
G
S
F
eatures
Trench FET Power MOSFET
APPLICATION
z
z
Load Switch for Portable Devices
DC/DC Converter
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
V
DS
Limit
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
±10
T
A
= 25
o
C
–
4
.
2
-2.
8
A
A
Continuous Drain Current
Pulsed Drain Current
1)
T = 70
o
C
I
D
A
I
DM
P
D
-1
6.8
1.2
5
T
A
= 25
o
C
Maximum Power Dissipation
2)
T =
70
o
C
W
1
.
0
A
-50 to 150
o
C
Operating Junction an
Storage Temperature Range
T
J
, T
stg
o
C/W
Junction-to-Amb
ent Thermal Resistance (PCB mounted)
2)
R
thJA
100
Notes
1)
Pulse width limi
ed by maximum junction temperature.
Surface Mounted on FR4 Board, t
v
5 sec.
2)
The above data are for reference only.
第1页,共5页
IRLML6401TR
P-Channel 12-V (D-S) MOSFET
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±10V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-
4
A
V
GS
=-3.3V, I
D
=-
3
.0A
V
GS
=-
2
.
5
V, I
D
=-
2
.0A
V
DS
=-5V, I
D
=-2.8A
-20
V
-0.4
-0.6
-1
±100
nA
µA
I
DSS
37
40
48
Drain-source on-state resistance
a
R
DS(on)
mΩ
S
55
60
45
Forward transconductance
a
Dynamic
b
g
fs
6
.
5
Input capacitance
C
iss
C
oss
C
rss
76
0
94
Output capacitance
Reverse transfer capacitance
V
DS
=-10V,V
GS
=0V,f
z
pF
nC
76
V
DS
=-
10
V,V
GS
=-4.5V,I
D
=-
3
A
V
=-10V,V
GS
=-4.5V,I
D
=-
3
A
Total gate charge
Q
g
7
.
8
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
t
d(on)
t
r
0.
9
1.
8
5.5
3.9
1
1.3
3
6
Turn-on delay time
V
DD
=-10V, R
L
=1
.2
Ω,
I
D
=-
2
A,
Rise time
ns
Turn-off delay time
t
d(off)
V
GEN
=-4.5V,Rg=
3.3
Ω
Fall time
t
f
Drain-source body diode charact
ristics
Continuous source-drain diode curr
nt
A
V
T
C
=25
℃
I
S
=-
4
A
I
S
–
2
.
0
-1.2
Body diode voltage
V
SD
-0.8
7
a)
Pulse test: puls
width ≤ 300us, duty cycle≤ 2%
b)
Guaranteed by design, not subject to production testing
第2页,共5页
IRLML6401TR
P-Channel 12-V (D-S) MOSFET
Typical Characteristics
-V
DS
, Drain -Source Voltage (V)
Tj – Junction
T
emperature (°C)
Fig1.
Typical Output Characteristics
Fig2.
Normalized Thre
Voltage Vs. Temperature
-V
GS
, Gate -Sourc
ltage (V)
-ID , Drain Current (A)
Fig3.
Typical Transfer Characteristics
Fig4.
On-Resistance vs. Drain Current and Gate Voltage
-V
SD
, Source-Drain Voltage (V)
-V
DS
, Drain -Source Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Fig6.
Maximum Safe Operating Area
第3页,共5页
IRLML6401TR
P-Channel 12-V (D-S) MOSFET
Typical Characteristics
-V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
Qg,
T
o
te Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Switching Time Test Circuit and waveforms
第4页,共5页
IRLML6401TR
P-Channel 12-V (D-S) MOSFET
Outlitne Drawing
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Symbol
Min
Typ
Max
1.40
0.10
0.50
20
3.10
1.60
2.80
A
A1
b
1.00
0.35
0.10
2.70
1.40
2.4
c
D
E
2.90
1.90
e
E1
e
L
0
0.4
0°
0.30
10°
L1
θ
Suggested Pad Layout
0.037
0.95
Note:
1.
0.037
0.95
Controlling
dimension:in/millimeters. 2.General
tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
m
第5页,共5页
