JSMSEMI-JSM2302
| Part # | JSMSEMI-JSM2302 |
Download  | JSMSEMI-JSM2302 |
J
SM
2302
N
-Channel MOSFET
描述
/ Descriptions
3
SOT-23 塑封封装 N 沟道 MOS 场效应管。
N- CHANNEL MOSFET in a SOT-23 Plastic Package.
PIN1
：
G
特征
/ Features
1
2
PIN 2
：
S
PIN 3
：
D
芯片采用超高密度圆胞设计技术，R
DS(ON)
导通电阻小，SOT-23 封装。
Super high dense cell design for low R
DS(ON)
,SOT-23 package.
用途
/ Applications
电池管理，高速开关，低功率 DC-DC 转换。
Battery management,High speed switch,low power DC to DC converter.
印章代码
/
Marking
Marking
A2
S
H
B
极限参数
/ Absolute
Maximum Ratings(Ta=25
℃
)
参数
Parameter
符号
Symbol
V
DSS
数值
Rating
单位
Unit
V
Drain-Source Voltage
20
Gate-Source Voltage
V
GSS
I
D
I
DM
I
S
±8
3.0
V
A
Drain Current – Continuous
Pulsed Drain Current
10
A
Continuous Source Current
Power Dissipation
0.95
0.9
A
P
D
T
stg
W
℃
Storage Temperature Range
-55
～
150
第1页,共4页
J
SM
2302
N
-Channel MOSFET
电性能参数
/ Electrical
Characteristics(Ta=25
℃
)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
T
e
st Conditions
Min
Typ
Max Unit
Drain–Source Breakdown Voltage
V
(BR)DSS
V
GS
=0
I
D
=10
μ
A
V
DS
=20V
V
DS
=0V
I
D
=3.6A
I
D
=3.1A
I
D
=3.6A
20
V
Zero Gate Voltage Drain Current
Gate–Body Leakage.
I
DSS
I
GSS
V
GS
=0
1.0
±100
60
μ
A
nA
m
Ω
m
Ω
S
V
GS
=±8V
R
DS(on)1
V
GS
=4.5V
R
DS(on)2
V
GS
=2.5V
Static Drain–Source
On–Resistance
115
Forward Transconductance
g
FS
V
DS
=5V
V
GS
=0V
8
Drain–Source Diode Forward
Voltage
V
SD
I
D
=1.25A
0.75
1.2
1.0
V
Gate Threshold Voltage
State Drain Current
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
GS(th)
I
D(on)
t
d(on)
t
r
V
DS
=V
GS
V
DS
=5V
I
D
=50
μ
A
0.50
4
V
A
V
GS
=2.5V
7
V
DD
=10V
V
GEN
=4.5V
R
GEN
=6
Ω
I
D
=3.6A
55
15
10
ns
t
d(off)
t
f
R
L
=2.8
Ω
第2页,共4页
