JSMSEMI-JSM4953
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JSM4953
Dual P-Channel -30V(D-S) MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
SOP-8
D2
D2
0.059Ω@-1
0
. V
D1
D1
-30V
-5.3A
0
.
0
89Ω@-4.5V
G2
S2
G1
S1
Pin 1
Equivale
n
t
C
ir
cuit
D1
D2
General FEATURE
●
TrenchFET Power MOSFET
●
Lead free product is acquired
●
Surface mount package
G
G2
S1
S2
MARKING
APPLICATION
●
Load Switch for Portable Devices
●
DC/DC Converter
4953
XXXYWP
o
Y :year code
W :week code
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Parameter
Drain-Source Volta
e
Symbol
Value
Unit
V
DS
-30
V
Gate-Source Vol
age
V
GS
±20
Continuous Drain Current
I
D
-5.3
-20
A
Pulsed Drain Current
I
DM
P
D
Maximum Power Dissipation
2.0
125
W
℃
/W
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
R
θ
JA
T
J
T
stg
150
℃
Storage Temperature
-55 ~+150
第1/5页
JSM4953
Dual P-Channel -30V(D-S) MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
B
V
DSS
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
V
V
V
GS
= 0 V, I
D
= –250
m
A
–30
V
–1
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
DS
= –24 V,
GS
= –20 V,
V
V
GS
= 0 V
DS
= 0 V
m
A
nA
nA
–100
100
V
GS
= 20 V,
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
G
S
,
I
D
= –250
m
A
–1
–1.7
–3
V
V
GS
= –10 V,
I
D
= –5.3 A
54
84
59
89
m
W
Static Drain–Source
On–Resistance
R
DS(on)
V
GS
= –4.5 V,
I
D
= –4.2 A
I
D(on)
g
FS
On–State Drain Current
V
GS
= –10 V,
V
DS
= –5 V,
V
DS
= –5.0 V
I
D
= –5 A
–20
A
S
Forward Transconductance
10
Dynamic Characteristics
C
Input Capacitance
528
132
70
pF
pF
pF
iss
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charg
Gate–Source Char
e
Gate–Drain Charge
7
ns
ns
13
14
9
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
W
ns
ns
Q
g
6.0
2.2
2.0
9
nC
nC
nC
V
DS
= –15 V,
V
GS
= –5 V
I
D
= –5 A,
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= –2.6 A
Voltage
–1.3
–1.2
A
V
V
SD
–0.8
Notes:
1.
R
q
JA
is the sum o
the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
C
A
is determined by the user’s board design.
第2/5页
JSM4953
Dual P-Channel -30V(D-S) MOSFET
Typical Characteristics
2
30
V
GS
= -10V
-6.0V
-5.0V
1.8
V
GS
=-4.0V
-4.5V
20
10
0
1.6
-4.0V
-4.0V
1.4
1.2
1
-5.0V
-6.0V
-7.0V
-3.5V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
6
0
6
12
18
24
30
–
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.2
I
D
= -5A
V
GS
= -10V
I
D
= -2.5A
0.
0.15
0.1
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
0.05
0
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T
J
, JUNCTION TEMPERATU
C)
–
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistanc
riation with
Temperatur
.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25
o
C
V
S
= -5V
V
GS
=0V
10
T
A
= -5
5
o
C
12
9
T
A
= 125
o
C
125
o
C
1
25
o
C
0.1
6
-5
5
o
C
0.01
3
0.001
0
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
–
V
GS
, GATE TO SOURCE VOLTAGE (V)
–
V
S
D
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
第3/5页
JSM4953
Dual P-Channel -30V(D-S) MOSFET
Typical Characteristics
10
800
I
D
= -5A
f = 1 MHz
V
GS
= 0 V
V
D
S
= -5V
700
-10V
8
6
4
2
0
600
-15V
C
ISS
500
400
300
C
OSS
200
100
C
RSS
0
0
5
10
15
20
25
30
0
2
4
6
8
10
-V
D
S
, DRAIN T
SOU
CE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
100
m
s
R
DS(ON)
LIMIT
SINGLE PULSE
R
q
= 135°C/W
1ms
10ms
JA
T
A
= 25°C
100ms
1s
10s
1
DC
V
GS
= -10V
SINGLE PULSE
R
q
JA
= 13
5
o
C/W
0.1
0.01
T
A
= 25
o
C
0.001
0.01
0.1
1
10
100
0.1
1
10
0
t
1
, TIME (sec)
–
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe
rat
Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D
0
5
R
q
JA
(t) = r(t) + R
q
JA
0.2
R
q
JA
= 135 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
0.01
T
J
– T
A
= P * R
JA
(t)
q
Duty Cycle, D =
t
1
/
t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
第4/5页
JSM4953
Dual P-Channel -30V(D-S) MOSFET
SO
P8
Package Outline Dimensions
Dimensions In Millimeters
Sy
m
bo l
Dimensions In Inches
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
.189
Max
0
0.
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
SO
P8
Suggested Pa
ayout
第5/5页
