JSMSEMI-JSM7409B

JSM7409

B

 

Plastic-Encapsulate MOSFETS  

PDFN3X3-8L  

Description  

The

JSM

7409B uses

 

advanced trench technology to  

provide excellent R

DS(ON)

, low gate charge and operation  

with gate voltages as low as 4.5V.  

1

8

2

3

7

6

4

5

General Features  

●

V

DS

= -30

V

,

I

D

= -25A  

Equivale

n

t

C

ir

 

cuit  

D

R

DS(ON)

< 30m

Ω

@ V

GS

=-4.5V  

R

DS(ON)

< 17m

Ω

@ V

GS

=-10V  

G

●

High power and current handing capability  

●

Lead free product is acquired  

●

Surface mount package  

S

MARKING  

Application  

●

Battery Switch  

7409B  

TFCYWP  

●

Load switch  

●

Power management  

Y :year code

 

W :week code  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parame

ter

Symbol  

Limit  

-30  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

±20  

V

V

GS  

-10  

T

A

=25

℃

 

T

A

=70

℃  

Continuous Drain Current (T

J

=150

℃

)  

A

I

D  

-8.0  

Drain Current-Pulsed

 

(Note 1)  

Maximum Power Dissipation  

-45  

3.1  

A

I

DM  

P

D  

W

℃

Operating Junction and Storage Temperature Range  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Ambient

(Note 2)  

R

θ

JA  

40  

℃

/W  

1/6  

J

SM7409B  

Plastic-Encapsulate MOSFETS  

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ

 

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=-250

μ

A  

V

DS

=-30V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

-30  

-33  

–

V

–

–

–

–

-1  

μ

A  

nA  

I

GSS  

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=-250

μ

A  

1.0  

–

1.7  

1

4  

3.0  

17  

V

=-10A  

V

GS

=-10V, I

D  

m

Ω

Drain-Source On-State Resistance  

25  

–

30  

–

m

Ω

V

GS

=-4.5V, I

D

=-10A  

V

DS

=-15V,I

D

=-10A  

–

10  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

S

C

lss  

C

oss  

C

rss  

–

–

–

1600  

350  

–

–

–

PF  

PF  

PF  

V

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

300  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

10  

15  

110  

70  

30  

5.5  

8

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

D

D

=-15V, ID=-1A,  

V

GS

=-10V,R

GEN

=6

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

g

s  

Q

gd  

–

–

–

V

DS

=-15V,I

D

=-10A  

V

GS

=-10V  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

–

–

V

SD  

V

GS

=0V,I

S

=-10A  

1.2  

V

Notes:  

1.

Repetitive Rating: Pulse wid

t

h limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Bo

a

rd, t

≤

10 sec.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to production  

2/6  

JSM7409B  

Plastic-Encapsulate MOSFETS  

Typical Electrical and Thermal Characteristics  

t

on  

t

r  

t

off  

t

f  

t

d(on)  

V

OUT  

V

IN  

t

d(off)  

90%  

90%  

INVERTED  

10%  

90%  

10%  

50%  

50%  

10%  

PULSE WIDTH  

Figure 1:Switching Test Circuit  

Figure 2:Sw

i

tching Waveforms  

T

J

-Junction

T

e

mpe

rature(

℃

)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Power Dissipation  

Figure 4 Drain Current  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 5 Output Characteristics  

Figure 6 Drain-Source On-Resistance  

3/6  

JSM7409

B  

Plastic-Encapsulate MOSFETS  

-10A  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Transfer Characteristics  

Figure 8 D

rai

n-Source On-Resistance  

-10A  

Vgs Gate-S

o

urce Voltage (V)  

Vds Drain-Source Voltage (V)  

Figure 9 Rdson vs Vgs  

Figure 10 Capacitance vs Vds  

-10A  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 11 Gate Charge  

Figure 12 Source- Drain Diode Forward  

4/6  

JSM7409B  

Plastic-Encapsulate MOSFETS  

Vds Drain-Source Voltage

(V)  

Figure 13 Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14 Normalized Maximum Transient Thermal Impedance  

5/6  

JSM7409

B  

Plastic-Encapsulate MOSFETS  

Package Information  

PDFN3333  

C

b

M

L1  

e

E2  

A

θ

Land Pattern  

( Only

 

for Reference )  

0.4  

E1  

E

0.65  

2.80  

MM  

INCH  

MM  

NOM  

3.15  

INCH  

NOM  

0.122  

SYMBOL  

SYMBOL  

MIN  

0.70  

0.25  

0.10  

3.25  

3.00  

1.78  

*

NOM  

0.75  

0.30  

0.15  

3.35  

3.10  

1.88  

0.13  

3.30  

MAX  

0.80  

0.35  

0.25  

3.45  

3.20  

1.98  

*

MIN  

NOM  

0.030  

0.012  

0.007  

0.132  

0.122  

0.074  

0.005  

0.130  

MAX  

0.031  

0.014  

0.010  

0.136  

0.126  

0.078  

*

MIN  

3.00  

2.39  

MAX  

3.20  

2.59  

MIN  

0.118  

0.094  

MAX  

0.126  

0.102  

A

b

0.028  

0.010  

0.004  

0.128  

0.118  

0.070  

*

E1  

E2  

e

2.49  

0.65BSC  

0.098  

0.026BSC  

c

D

H

0.30  

0.40  

0.40  

0.13  

10°  

*

0.50  

0.50  

*

0.012  

0.016  

0.016  

0.005  

10°  

*

0.020  

0.020  

*

D1  

D2  

D3  

E

L

0.30  

0.012  

L1  

θ

M

*

*

*

*

*

*

12°  

0.15  

12°  

0.006  

3.20  

3.40  

0.126  

0.134  

6/6