JSMSEMI-JSM90N20P
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JSM90N20P
220V N-Channel MOSFET
FEATURES
Fas
t
s
wi
t
chi
n
g
100% a
v
a
lanche tested
I
m
pro
v
e
d d
v
/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninter
r
u
ptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Package
Marking
Device
JSM90N20P
JSM90N20P
TO-3P
JSM90N20P
JSM90N20P
TO-247
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise
ed
Value
Symbol
Unit
Parameter
TO-3P
TO-247
V
DS
I
D
220
V
A
Drain-Sour
c
e V
o
ltage (
V
GS
=
0
V
)
Continuous Drain Current V
GS
= 10V
T
C
= 25
º
C
Pul
s
e
d Drain Current
80
(note1)
I
DM
V
G
S
S
E
AS
I
AS
320
A
V
Gate-Source Voltage
±
20
Single Pulse
A
v
a
lanche Ene
r
g
y
(note2)
(note1)
(note1)
1960.2
19
.
8
mJ
A
Avalanche Cur
r
e
nt
Repetiti
v
e Avalanche Energy
Power Dissipation (T
C
= 25ºC)
Peak Diode Re
c
o
v
e
y
d
v
/dt
E
AR
P
D
1
1
76.1
140
mJ
W
(note1)
5.0
d
v
/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
ºC
-55~+150
Thermal Resistance
Parameter
Symbol
Unit
Value
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.89
60
R
thJC
R
thJA
ºC/W
第1页,共7页
JSM90N20P
220V N-Channel MOSFET
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Unit
Symbol
Parameter
Test Conditions
Ty
p
.
Min.
Max.
Static
Drain-Source Breakdown Voltage
V
V
G
S
=
0
V
, I
D
= 250µA
220
V
(BR)DSS
—
—
—
—
—
1
V
DS
= 40
V
, V
G
S
=
0
V
, T
J
= 25
º
C
—
—
Zero Gate Voltage Drain Current
I
DSS
μ
A
V
DS
= 32
V
, V
GS
= 0V, T
J
= 125ºC
100
±
100
4.0
V
G
S
=
±
20V
Gate-Source Leakage
I
GSS
nA
V
—
Gate-Source Threshold Voltage
V
G
S
(th)
R
DS(on)
2.0
V
DS
= V
GS
, I
D
= 250µA
– –
m
Ω
Drain-Sour
c
e On-Re
s
i
s
t
ance (Note3)
V
G
S
= 10
V
, I
D
= 95
A
(Note4)
30
35
—
Dynamic
C
Input Capaci
t
a
nce
5784
893
561
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
iss
V
G
S
=
0
V
,
V
DS
= 25
V
,
f = 1.0
M
H
z
pF
nC
Output Capacitance
C
oss
Re
v
e
rse Transfer Capacitance
C
rss
Q
g
Q
gs
Q
gd
t
d
(
o
n)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
367
33.8
177
V
DD
20V, I
D
= 190
A
,
V
G
S
= 10
V
(
Note4)
Turn-on Delay Time
55
165
V
D
D = 20V, ID =19
0
A
,
RG
= 10 Ω,
VGS = 10V
(Note4)
Turn-on Rise Time
Turn-off Delay Time
t
r
ns
t
d
(
o
ff)
1050
367
Turn-off Fall Time
Drain-Source Body Diode Chara
stics
Continuous Body Diode Current
I
S
80
320
1
.
4
—
—
—
—
—
—
—
A
T
C
=
2
5 ºC
I
SM
V
SD
t
rr
Pul
s
e
d Diode Forward Current
Body Diode
V
o
ltage
T
J
= 25ºC, I
SD
= 95A,
V
G
S
=
0
V
V
—
Re
v
e
rse Re
c
o
v
e
r
y
T
ime
360
ns
μ
C
—
—
V
G
S
=
0
V
,
I
S
= 190A,
di
F
/dt =10
0
A
/
μs
Re
v
e
rse Re
c
o
v
e
ry Charge
5.61
Q
rr
Notes
1. Repetiti
v
e
R
ating: Pul
s
e width limited b
y
m
a
x
i
m
u
m junction te
m
p
erature
2. L
= 10mH,
V
D
D = 50V, RG
= 25 Ω,
Starting TJ = 25 ºC
3. Pulse
Test: Pulse width
≤
300μ
s
, Duty C
y
cle
≤
1%
第2页,共7页
JSM90N20P
220V N-Channel MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
第4页,共7页
JSM90N20P
220V N-Channel MOSFET
Figure
A
：
G
a
te Charge Test Circuit and Waveform
Figure B
：
R
e
s
i
s
tive Switching Test Circuit and W
orm
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
第5页,共7页
JSM90N20P
220V N-Channel MOSFET
TO-247 Package Dimensions
Dim
A
Min
20.0
15.5
5.7
Max
22.0
16.0
6.3
B
C
D
4.0
4.4
E
19.0
1.1
21.0
1.3
F
G
3.5
3.8
H
18.3
4.9
20.2
5.2
I
J
2.3
2.5
K
.55
0
10.7
1.9
0.65
42.0
10.9
2.1
L
P
F1
2
2.9
3.1
mm
Fig.2 o
e dimensions (unindicated tolerance:±0.1mm)
第6页,共7页
JSM90N20P
220V N-Channel MOSFET
TO-3P
Unit: mm
Size
Max
Size
Size
Max
Size
Symbol
Symbol
Symbol
Symbol
Min
Min
Max
Min
Min
Max
W
W1
15.40 15.80
13.40 13.80
W5
W6
1.80
2.80
2.20
3.20
L3
L4
13.70 14.10
19.70 20.30
T2
T3
1.20
0.55
1.60
0.75
G (Φ)
(
Front
)
G1(Φ)
(
Back
)
W2
9.40
9.80
L
19.70
20.10
L5
3.30
3.70
3.30
3.10
3.50
3.30
W3
W4
5.45 (TYP)
0.80 1.20
L1
L2
18.50
3.60
18.90
4.00
T
4.60
1.45
5.00
1.65
T1
第7页,共7页
