JSMSEMI-MMBT4401

MMBT4401  

NPN Silicon Epitaxial Planar Transistor  

FEATURES  

z

Epitaxial planar die construction.  

z

Complementary PNP type available:  

MMBT4403.  

z

Ideal for medium power amplification and switching.  

APPLICATIONS  

z

General purpose application, switching application.  

SOT-23  

MAXIMUM RATING

@

T

a

=25

℃

unless otherwise specified  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

60  

Units  

Collector-Base Voltage  

V

Collector-Emitter Voltage  

40  

V

Emitter-Base Voltage  

6

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction and Storage Temperature  

600  

350  

-55~150  

mA  

mW  

℃

P

C  

T

j,

T

stg  

第1/4页  

MMBT4401  

NPN Silicon Epitaxial Planar Transistor  

ELECTRICAL CHARACTERISTICS

@

T

a

=25

℃

unless otherwise specified  

Parameter  

Symbol Test

 

conditions  

MIN  

TYP MAX

 

UNIT  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CBO  

I

C

=100

μ

A,I

E

=0  

60  

V

V

V

V

(BR)CEO  

I

C

=1mA,I

B

=0  

40  

6

V

(BR)EBO  

I

E

=100

μ

A,I

C

=0  

I

CBO  

I

C

EO  

I

EBO  

V

CB

=50V,I

E

=0  

V

CE

=35V,I

E

=0  

V

EB

=5V,I

C

=0  

0.1  

0.1  

0.1  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

Emitter cut-off current  

V

CE

=1V,I

C

=0.1mA  

V

CE

=1V,I

C

=1.0mA  

V

CE

=1V,I

C

=10mA  

V

CE

=1V,I

C

=150mA  

V

CE

=2V,I

C

=500mA  

20  

40  

80  

100  

40  

DC current gain  

h

FE  

300  

I

C

=150mA, I

B

=15mA  

I

C

=500mA, I

B

=50mA  

0.4  

0.75  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE(sat)  

V

V

I

C

=150mA, I

B

=15mA  

I

C

=500mA, I

B

=50mA  

0.75 0.95  

1.2  

V

BE(sat)  

V

CE

=10V, I

C

= 20mA  

f=100MHz  

Transition frequency  

f

T  

250  

MHz  

pF  

Collector output capacitance  

V

CB

=5V,I

E

=0,f=1MHz  

C

ob  

6.5  

第2/4页  

MMBT4401  

NPN Silicon Epitaxial Planar Transistor  

TYPICAL CHARACTERISTICS

@

T

a

=25

℃

unless otherwise specified  

第3/4页  

MMBT4401  

NPN Silicon Epitaxial Planar Transistor  

PACKAGE OUTLINE  

Plastic surface mounted package  

SOT-23  

A

SOT-23  

Dim  

A

Min  

2.85  

1.25  

Max  

2.95  

1.35  

E

K

B

B

C

D

E

1.0Typical  

0.37  

0.35  

1.85  

0.02  

0.43  

0.48  

1.95  

0.1  

J

D

G

G

H

J

H

0.1Typical  

C

K

2.35  

2.45  

All Dimensions in mm  

SOLDERING FOOTPRINT  

Unit : mm  

PACKAGE INFORMATION  

Device  

Package  

SOT-23  

Shipping  

MMBT4401  

3000/

T

a

pe&Reel  

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