JSMSEMI-MMBT5551

MMBT5551  

NPN General Purpose Transistor  

FEATURES  

z

Epitaxial planar die construction.  

z

Complementary PNP type available  

(MMBT5401).  

z

Also available in lead free version.  

APPLICATIONS  

z

Ideal for medium power amplification and switching.  

SOT-23  

MAXIMUM RATING

@

T

a

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Value  

UNIT  

V

CBO  

collector-base voltage  

180  

V

V

CEO  

V

EBO  

I

C  

collector-emitter voltage  

160  

V

emitter-base volta

ge  

6

V

collector current (DC)  

0.6  

A

P

C  

Colle

c

tor dissipation  

0.35  

W

R

θ

JA  

T

j

,T

stg  

Thermal resistance,Junction to ambient  

junction and storage temperature  

357  

°C/W  

°C  

-55 to +150  

第1/4页  

MMBT5551  

NPN General Purpose Transistor  

ELECTRICAL CHARACTERISTICS

@

T

a

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Test conditions  

MIN. MAX. UNIT  

V

(BR)CBO  

Collector-base breakdown voltage  

I

C

=100

μ

A,I

E

=0  

180  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Collector-emitter breakdown voltage

 

I

C

=0.1mA,I

B

=0  

160  

6

Emitter-base breakdown voltage  

collector cut-off current  

I

E

=10

μ

A,I

C

=0  

I

E

= 0; V

CB

= 120V  

I

C

= 0; V

EB

= 4V  

–

–

50  

50  

nA  

nA  

I

EBO  

emitter cut-off current  

V

CE

= 5V; I

C

= 1mA  

V

CE

= 5V;I

C

= 10mA  

80  

100  

30  

–

300  

–

h

FE  

DC current gain  

V

I

C

= 10mA;

I

B

=

1mA  

I

C

= 50mA; I

B

= 5mA  

I

C

=10mA; I

B

=1mA  

I

C

=50mA; I

B

=5mA  

I

C

=10mA; V

CB

=10V;  

f=100MHz  

0.15  

0.2  

1

V

CE(sat)  

V

BE(sat)  

f

T  

collector-emitter saturation voltage  

base-emitter saturation voltage  

transition frequency  

–

–

V

V

1

100  

300  

6.0  

MHz  

pF  

I

E

=10mA; V

CE

=10V;  

f=1.0MHz  

C

obo  

Output capacitance  

TYPICAL CHARACTERISTICS

@

T

a

=25

℃

unless otherwise specified  

第2/4页  

MMBT5551  

NPN General Purpose Transistor  

第3/4页  

MMBT5551  

NPN General Purpose Transistor  

PACKAGE OUTLINE  

Plastic surface mounted package  

SOT-23  

A

SOT-23  

Dim  

A

Min  

2.70  

1.10  

Max  

3.10  

1.50  

E

B

K

B

C

D

E

1.0 Typic

al  

0.4 Typical  

0.35  

0.48  

2.00  

0.1  

J

D

G

H

J

1.80  

0.02  

G

0.1 Typical  

H

K

2.20  

2.60  

C

All Dimensions in mm  

SOLDERING FOOTPRINT  

0.95  

0.95  

2.00  

0.90  

Unit : mm  

0.80  

PACKAGE INFORMATION  

Device  

Package  

SOT-23  

Shipping  

3000/

T

a

pe&Reel  

MMBT5551  

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