JSMSEMI-MMBTA92
| Part # | JSMSEMI-MMBTA92 |
Download  | JSMSEMI-MMBTA92 |
MMBTA92
PNP High Voltage Amplifier
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBTA42).
Ideal for medium power amplification and switching.
APPLICATIONS
High voltage driver applications.
SOT-23
MAXIMUM RATING
@
T
a
=
℃
unless otherwise specified
Symbol
Parameter
Value
UNIT
V
CBO
collector-base voltage
-300
V
V
CEO
V
EBO
I
C
collector-emitter voltage
emitter-base voltage
-300
-5
V
V
collector current (DC)
-0.5
A
R
θ
Thermal resistance,junction to ambient
Collector dissipation
417
°C/W
W
JA
P
C
0.3
T
j
,T
stg
junction and storage temperature
-55 to +150
°C
第1/4页
MMBTA92
PNP High Voltage Amplifier
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Test conditions
MIN. MAX. UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-100μA,I
E
=0
-300
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA,I
B
=0
-300
-5
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
collector cut-off current
I
E
=-100μA,I
C
=0
I
E
= 0; V
CB
= -200V
I
C
= 0; V
EB
= -3V
–
–
-0.25 μA
I
EBO
emitter cut-off current
-0.1
–
μA
V
CE
= -10V; I
C
= -1mA
V
CE
= -10V;I
C
= -10mA
V
CE
= -10V;I
C
= -30mA
25
40
25
h
FE
DC current gain
V
CE(sat)
collector-emitter saturation voltage
base-emitter saturation voltage
I
C
= -20mA; I
B
= -2mA
–
–
-0.5
-0.9
V
V
V
BE(sat)
I
C
= -20mA; I
B
= -2mA
V
CB
=-20V,f=1.0MHz
C
ob
f
T
Collector output capacitance
transition frequency
–
6.0
–
pF
I
C
= -10mA; V
CE
= -20V;
f = 100MHz
50
MHz
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
第2/4页
MMBTA92
PNP High Voltage Amplifier
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.70
1.10
0.90
0.30
0.35
1.80
0.02
0.05
2.20
Max
3.10
1.50
1.10
0.50
0.48
2.00
0.10
0.15
2.60
E
K
B
B
C
D
E
J
D
G
H
J
G
C
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
Unit : mm
0.80
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
3000/
T
a
pe&Reel
MMBTA92
第4/4页
