JSMSEMI-NCE60P50K
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NCE60P50K
P-Channel 60V (D-S) MOSFET
Description
：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
D
Features
：
G
S
1) V
DS
=-60V,I
D
=-50A,R
DS(ON)
<20m
Ω
@V
GS
=-10V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra Iow R
DS(ON)
.
5) Excellent
package for good heat dissipation.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
-60
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
GS
V
±
20
-50
Continuous Drain Curr
=25
℃
Continuous Drain
rent-T
C
=100
℃
Pulsed Drain Current
1
A
I
D
-40
A
I
DM
P
D
-280
A
Total
ower Dissipation
270
W
mJ
℃
E
AS
Single Pulsed Avalanche Energy
Operating and Storage Junction Temperature Range
700
T
J
, T
STG
-55 to +150
Thermal Characteristics
：
Symbol
R
ƟJC
Parameter
Thermal Resistance,Junction to Case
Max
Units
0.46
℃
/W
第1页,共6页
NCE60P50K
P-Channel 60V (D-S) MOSFET
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
-60
—
—
—
—
—
-1
V
V
GS
=0V,I
D
=-250
μ
A
V
GS
=0V, V
DS
=-60V
V
GS
=
±
20V, V
DS
=0A
BV
DSS
μ
A
nA
I
DSS
I
GSS
—
±
1
0
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Static Drain-Source On-Resistance
V
GS
=V
DS
, I
D
=-250
μ
A
V
GS
=-10V,I
D
=-20A
V
GS
=-4.5V,I
D
=-20A
-1.1
—
-1.6
16.5
18.5
-2.2
20
V
m
Ω
R
DS(ON)
—
22
Dynamic Characteristics
Input Capacitance
—
—
—
4399
258
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=-20V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
211
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
23
17
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
DD
=-30V, I
D
=-20A,
Turn-O
y Ti
Fa
Time
V
GS
=-10V, R
G
=1
Ω
55
29
Total Gate Charge
Gate-Source Charge
Gate-Drain “Miller” Charge
114
27.3
49
Q
g
V
GS
=-10V, V
DS
=-30V,
I
D
=-20A
Q
gs
Q
gd
Drain-Source Diode Characteristics
Drain Diode Forward Voltage
V
GS
=0V,I
S
=-20A
—
—
-1.2
V
V
SD
第2页,共6页
NCE60P50K
P-Channel 60V (D-S) MOSFET
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-50
-280
—
A
A
I
S
V
G
=V
D
=0V
I
SM
Trr
Qrr
117
420
nS
nC
T J = 25
°
C, IF =-20A,
di/dt =100A/μs
—
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T J =25
℃
, VDD =-25V, VG =-5V, RG =25Ω, L=0.5mH, IAS
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
-40
-30
-3V
-4V
T
C
=25
℃
impulse=250uS
-30
-20
-6V
-2.8V
-20
-15
-10V
25
℃
-10
0
-2.5V
-5
0
0
-2
-4
-6
-8
-10
0
– 1
-2
-3
– 4
-5
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 1. On-Re
n C
acteristics
Figure 2. Transfer Characteristics
-20
90
45
Note
：
T
J
=25
℃
-16
-12
-8
-4
0
V
GS
=-4.5V
V
GS
=-10V
15
0
0
-0.2
– 0.4
– 0.6
– 0.8
-1.0
-1.2
0
-10
-20
– 30
-40
-50
V F ,Forward Voltage [V]
I D – Drain Current (A)
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
第3页,共6页
NCE60P50K
P-Channel 60V (D-S) MOSFET
-10
C
iss
Note:
V
DS
= -30
V
,
I
D
= -20A
-8
-6
Note:
V
GS
=0
V
,
f=500Khz
C
oss
-4
-2
C
rss
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
0
0
30
60
9
120
–
–
–
–
–
–
V
DS
Drain-to-Source Voltage (V)
Qg Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
3
-9
-7
0.01ms
0.01ms
1ms
10ms
DC
10
2
-5
-3
10
1
10
0
Note: T
C
=25
℃
,
T
J
=150
℃
,Single pulse
0
0
25
50
75
100
125 150
Vds Drain-Source Voltage (-V)
Figure 9. Maximum Safe Operating Area
T J -Junction Temperature(
℃
)
Figure 10. Maximum
PContinuous Drain
Currentvs Case Temperature
第4页,共6页
NCE60P50K
P-Channel 60V (D-S) MOSFET
10
1
10
0
D=0.5
D=0.3
10
-1
D=0.1
D=0.05
10
-2
T
j
-T
C
=P
DM
*Z
θjc(t)
Duty Factor: D=t1/t2
D=0.02
D=0.01
DC
10
-4
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pluse Duration(sec)
Figure 11. Transient Thermal Response Curve
第5页,共6页
NCE60P50K
P-Channel 60V (D-S) MOSFET
TO-252 Package Dimensions
UNIT
：
mm
max
SYMBOL
min
6.40
5.20
4.40
4.40
0
4.65
5.90
1.57
0.90
nom
max
6.60
5.40
4.60
4.60
0.15
4.95
6.20
1.77
0.96
SYMBOL
min
2.90
0.45
0.45
nom
A
D
D1
D2
e
3.10
0.55
0.55
A1
A2
A3
A4
A5
B
2.30
1.70
E
F
2.20
0.45
2.40
0.55
G
L
B1
C
1.40
0
1.60
10.00
θ（度）
第6页,共6页
