JSMSEMI-S8050
| Part # | JSMSEMI-S8050 |
Download  | JSMSEMI-S8050 |
S8050
NPN Silicon Epitaxial Planar Transistor
FEATURES
High Collector Current.(I
C
= 500mA).
Complementary To S8550.
Excellent H
FE
Linearity.
High total power dissipation.(P
C
=300mW).
APPLICATIONS
High Collector Current..
SOT-23
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
V
Collector-Base Voltage
40
Collector-Emit
oltage
Emitter-Ba
Voltage
25
5
V
V
Collector Current -Continuous
Collector Dissipation
500
mA
mW
℃
P
C
300
Junction and Storage Temperature
T
j,
T
stg
-55 to +150
1/4
S8050
NPN Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Parameter
Symbol
Test conditions
I
C
=
100μA,I
E
=0
I
C
=0.1mA,I
B
=0
I
E
=10
0μA,I
C
=0
V
CB
=40V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
=5V,I
C
=0
MIN
40
25
5
TYP MAX
UNIT
V
Collector-base breakdown voltage
V
(BR)CBO
Collector-emitter breakdown voltage
V
(BR)CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
V
0.1
0.1
μA
μA
μA
I
CEO
I
EBO
0.1
V
CE
=1V,I
C
=50m
V
CE
=1V,I
C
=500mA
120
50
350
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=500mA, I
B
= 50mA
C
=500mA, I
B
= 50mA
0.6
1.2
V
V
V
CE
=6V, I
C
= 20mA
f=30MHz
Transition frequency
f
T
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
120-200
200-350
2/4
S8050
NPN Silicon Epitaxial Planar Transistor
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
3/4
S8050
NPN Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.70
1.10
0.90
0.30
0.35
1.80
0.02
0.05
2.20
Max
3.10
0
1.10
0.50
0.48
2.00
0.10
0.15
2.60
E
K
B
B
C
D
E
J
D
G
H
J
G
H
C
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
Unit: mm
0.80
PACKAGE INFORMATION
Device
S8050
Package
SOT-23
Shipping
3000/
T
a
pe&Reel
4/4
