JSMSEMI-SIR662DP-T1-GE3-JSM
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SIR662DP-T1-GE3
N-Channel MOSFET
Description
：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
Features
：
1) V
DS
=60V,I
D
=130A,R
DS(ON)
<3m
Ω
@V
GS
=10V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra R
DS(ON)
5) Excellent
package for good heat dissipation.
.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±
20
130
Continuous Drain
rent
25
℃
1
Continuous Drain Current-TC=100
℃
Pulsed Drain Current
2
I
D
—
A
390
Sin
le Pulse Avalanche Energy
5
Pow
r Dissipation
3
E
AS
P
D
80
mJ
W
140
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics
：
Symbol
R
Ɵ
JC
Parameter
Max
0.89
62
Units
℃
/W
℃
/W
Thermal Resistance,Junction to Case
Thermal Resistance Junction to mbient
4
R
Ɵ
JA
第1页,共4页
SIR662DP-T1-GE3
N-Channel MOSFET
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
GS
=0V,I
D
=250
μ
A
V
GS
=0V, V
DS
=60V
V
GS
=
±
20V, V
DS
=0A
60
—
—
—
—
—
—
1
V
BV
DSS
μ
A
nA
I
DSS
I
GSS
100
On Characteristics
3
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resistance
2
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=10A
1
—
2.5
3
2.5
3
V
—
—
m
Ω
R
DS(ON)
4.5
Dynamic Characteristics
4
Input Capacitance
—
—
—
5377
1666
77.7
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
Switching Characteristics
4
Turn-On Delay Time
—
—
—
—
—
—
—
22.5
6.7
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Tim
V
DD
=30V,I
D
=25A,R
G
=2
Ω
V
GS
=10V
Tu
n-Off Delay Time
Fall Time
80.3
26.8
66.1
10.7
10.9
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain
“
Miller
”
Charge
Q
g
V
GS
=10V, V
DS
=30V,
I
D
=25A
Q
gs
Q
gd
Drain-Source Diode Characteristics
Symbol
V
SD
Parameter
Conditions
Min
Typ
Max Units
Source-Drain Diode Forward Voltage
3
V
GS
=0V,I
S
=20A
—
—
1.3
V
第2页,共4页
SIR662DP-T1-GE3
N-Channel MOSFET
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
130
390
—
LS
VGS<Vth
A
LSp
Trr
I
S
=25 A,
di/dt=100
A/μs
68.3
73
NS
BC
—
Qrr
Notes:
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJ
A
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with T
a
=25
℃
.
5) V
DD
=50 V, R
G
=25
Ω
, L=0.3 mH, starting T
j
=25
℃
.
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
10 V
5 V
6 V
T
j
=
5 ℃
400
300
200
100
0
7 V
100
10
1
4.5 V
4 V
3.5 V
3 V
V
G
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
4
5
7
8
9
10
V
SD
, Source-Drain voltage (V)
V
DS
, Drain-source v
tage (V)
Figure 1, Typ. output characteristics
Figure 2, Typ. transfer characteristics
10.0
7.5
5.0
2.5
0.0
100000
10000
1000
100
I
D
= 25 A
f = 1
0 kHz
V
GS
= 0 V
V
DS
= 30 V
C
iss
C
oss
C
rss
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
第3页,共4页
SIR662DP-T1-GE3
N-Channel MOSFET
74
72
70
68
66
64
6.0m
5.0m
4.0m
3.0m
2.0m
1.0m
I
D
= 250 μA
I
D
= 20 A
V
GS
= 0 V
V
GS
= 10 V
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5, Drain-source breakdown voltage
Figure 6, Drain-source on-state resistance
0.05
T
j
= 25 ℃
100
0.04
0.03
5 V
4.5 V
4 V
3.5 V
V
GS
=3 V
10
1
0.02
0.01
0.00
6 V
10 V
50
100
150
200
250
300
350
400
450
0.4
0.6
0.8
1.0
1.2
1.4
.
1.
2.0
V
SD
, Source-Drain voltage (V)
I
D
, Drain current(A)
Figure 7, Forward charac
c of body diode
Figure 8, Drain-source on-state resistance
1000
100
10 μs
100 μs
R
DS(ON)
Limited
10
1 ms
10 ms
DC
1
0.1
0.1
1
10
100
V
DS
, Drain-source voltage(V)
Figure 9, Safe operation area T
C
=25
℃
第4页,共4页
