JSMSEMI-SUD23N06-31L-JSM
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SUD23N06-31L
60V N-Channel MOSFET
Description
：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
Features
：
1) V
DS
=60V,I
D
=30A,R
DS(ON)
<30m
Ω
@V
GS
=10V
2) Low
gate charge.
3) Green
device available.
4) Advanced
high cell denity trench technology for ultra Iow R
DS(ON)
.
5) Excellent
package for good heat dissipation.
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
60
±
20
30
V
V
V
GS
Continuous Drain C
rrent-TC=25
℃
Continuous Drain Current-TC=100
℃
I
D
A
16
I
DM
E
AS
I
AS
Drain
urrent
Pulsed1
100
A
mJ
A
–
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2)
24
22
Power Dissipation
40
W
P
D
Power Dissipation
–
Derate above 25
℃
Operating and Storage Junction Temperature Range
0.32
-55 to +150
W/
℃
℃
T
J
, T
STG
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SUD23N06-31L
60V N-Channel MOSFET
Thermal Characteristics
：
Symbol
R
ƟJC
Parameter
Max
3.1
62
Units
Thermal Resistance,Junction to Case
℃
/W
R
ƟJA
Thermal Resistance,Junction to Ambient
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Off Characteristics
BV
DSS
Parameter
Conditions
Min
Typ
Max Units
Drain-Sourtce Breakdown Voltage
BVDSS Temperature Coefficient
V
GS
=0V,I
D
=250
μ
A
60
—
—
—
—
—
0.07
—
—
—
V
Reference to 25
℃
, ID=1m
V
GS
=0V, V
DS
=650V
V/
℃
μ
A
μ
A
nA
△
BVDSS/
△
TJ
1
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
I
DSS
—
10
V
GS
=0V, V
DS
=480V,
T
J
=125
℃
V
GS
=
±
30V, V
DS
=0A
—
±
100
I
GSS
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resistance
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,I
D
=15A
V
GS
=4.5V,I
D
=10A
1.2
—
1.7
25
31
2.5
30
40
V
m
Ω
m
Ω
R
DS(ON)
—
Dynamic Characteristics
Input Capacitance
—
—
—
1150
60
1700
90
C
iss
C
oss
C
rs
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
43
65
Switching Characteristics
Turn-On Delay Time
2,3
—
—
—
15
4.5
27
40
8
ns
ns
ns
t
d(on)
t
r
V
DD
=30V, I
D
=1A,
Rise Time
2,3
R
G
=6
Ω
(Note 3,4)
Turn-Off Delay Time
2,3
50
t
d(off)
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SUD23N06-31L
60V N-Channel MOSFET
Fall Time
2,3
—
—
—
—
7.5
16
2
13
20
4
ns
nC
nC
nC
t
f
Total Gate Charge
2,3
Gate-Source Charge
2,3
Gate-Drain “Miller” Charge
2,3
Q
g
V
GS
=30V, V
DS
=10V,
I
D
=20A(Note 3,4)
Q
gs
Q
gd
3.5
7
Drain-Source Diode Characteristics
Diode Forward Voltage
V
GS
=0V,Is=1A,
—
—
—
—
—
—
—
—
17
12
1
25
100
—
V
A
V
SD
I
S
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
—
—
A
I
SM
T
rr
Q
rr
ns
nC
V
GS
=0V,I
S
=1A ,
dI/dt=100A/µs(Note 3)
—
Notes:
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=25V,VGS=10V,L=0.1mH,IAS=22A.,RG=25 ,Starting
TJ=25
℃
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
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SUD23N06-31L
60V N-Channel MOSFET
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
Fig.5 Normalized
Tran
t Impedance
Fig.6 Maximum
Safe Operation Area
Fig.7 Switching
Time Waveform
Fig.8 EAS
Waveform
第4页,共5页
