JSMSEMI-XP152A12C0MR
| Part # | JSMSEMI-XP152A12C0MR |
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XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
P-Channel 20-V(D-S) MOSFET
XP152A12COMR
V
(BR)DSS
R
DS(on)
MAX
I
D
SOT-23
0.300Ω@-4.5V
-20V
-0.4A
3
0.500 Ω@-2.5V
1.GATE
2.SOURCE
3.DRAIN
1
2
General FEATURE
●
TrenchFET Power MOSFET
●
Lead free product is acquired
●
Surface mount package
MARKING
Equivalent Circuit
w
212T
APPLICATION
●
Load Switch for Portable Devices
●
DC/DC Converter
week code
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
DS
V
GS
-20
V
Gate-Source Voltage
±12
Continuous Drain Current
Pulsed Drain Curr
nt
I
D
-0. 4
-6.0
I
DM
A
Continuous Sou
ce-Drain Diode Current
Maximum Power Dissipation
I
S
-1.30
0.5
P
D
W
℃
/W
250
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
R
θ
JA
T
J
T
stg
150
℃
Storage Temperature
-55 ~+150
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XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
MOSFET ELECTRICAL CHARACTERISTICS
T =25
℃
unless otherwise specified
a
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
V
(BR)DSS
V
GS
= 0V, I
D
=-250µA
-20
V
V
GS(th)
I
GSS
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±1
0
V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-0.4A
V
GS
=-2.5V, I
D
=-0.4A
-0.5
-0.7
-1
±100
-1
nA
µA
I
DSS
0.280
0.460
300
0.500
a
Drain-source on-state resistance
R
DS(on)
g
fs
Ω
S
a
Forward transconductance
V
DS
=-5V, I
D
=-0.4A
4.0
6.5
b
Dynamic
Input capacitance
C
iss
C
oss
C
rss
285
58
Output capacitance
V
DS
=-10V,V
GS
=0V,f =1MHz
V
DS
=-10V,V
GS
=-4.5V
-0.4A
V
DS
=-10V,V
GS
=-2.5V,I
D
=-0.4A
1MHz
pF
Reverse transfer capacitance
32
5.5
2.9
045
0.75
6.0
9.8
4.9
20.5
7.0
10
6
Total gate charge
Q
g
nC
Ω
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
t
d(on
20
60
50
20
V
DD
=-10V,
t
r
R
L
=5Ω,
I
D
=-0.4A,
V
GEN
=-4.5V,Rg=3Ω
ns
Turn-off delay time
Fall time
t
d(off)
t
f
Drain-source body diode charac
eristics
T
C
=25
℃
Continuous source-drain diode current
I
S
-1.3
A
V
a
Pulse diode forw
d current
I
SM
-10
Body diode
oltage
V
SD
I
S
=-0.4A
-0.8
-1.2
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle
≤
2%.
b.Guaranteed b
d
y
esi
n
g
n
o
,
t sub ec
j
t to
r
o
p
d
uction testin
. g
第2/6页
XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
0.4
0.3
0.2
0.1
0
T
J
-Junction
T
e
mperat
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
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第3/6页
XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
0.4
V
GS
=-4.5V
2.8A,
-Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
0.4A
-Vgs Gate-Sou
e Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-0.4A
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
第4/6页
XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Are
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
第5/6页
XP152A12COMR
SOT-23 Plastic-Encapsulate MOSFETS
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.045
0.004
0.041
0.020
0.006
0.1
8
0.055
0.100
0.950 TYP
0.550 REF
0.037 TYP
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.0
0
0.020
8°
SOT-23 Suggested Pad Lay
第6/6页
