JUXING-AO3407

AO3407  

P-CHANNEL ENHANCEMENT MOSFET  

V

(BR)DSS  

-30V  

R

DS(ON)MAX  

60mΩ@-10V  

87mΩ@-4.5V  

I

D  

特

征

Features  

-4.1A  





High dense cell design for extremely low R

DS(on).  

Exceptional on-resistance and maximum DC current capability.  

Load/Power Switching.  

SOT-23  





Interfacing Switching  

机械数

据

Mechanical Data  



封装

: SOT-23

封

装

SOT-23 Small Outline Plastic Package.  



环氧树

脂

UL

易燃等

级

Epoxy UL: 94V-0.  



安装位置

:

任

意

Mounting Position: Any.  

极限值和温度特性

(

TA = 25

℃

除非另有规定

)  

Maximum Ratings & Thermal Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

参数

Parameters  

Drain-Source Voltage  

Gate-Source Voltage  

Continuous Drain Current  

Power Dissipation  

Junction

T

e

mperature  

符

号

Symbol  

V

DS  

数

值

Value  

-30  

单

位

Unit  

V

V

A

mW  

℃

V

GS  

±

20  

-4.1  

350  

I

D  

P

D  

T

j  

150  

Storage

T

e

mperature  

Thermal Resistance From Junction to Ambient (note 2)  

T

s

tg  

R

θJA  

-50-+150  

357  

℃

℃

/W  

电特性

(

TA = 25

℃

除非另有规定

)  

Electrical Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

界

限

Limits  

参数  

Parameter  

符号  

Symbols  

测试条件  

Test Condition  

单位  

Unit  

Min  

Typ  

Max  

Off characteristics  

V

(BR)DSS  

I

DSS  

V

GS

=0V, I

D

=-250uA  

-30  

V

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain current  

Gate-body Leakage  

V

DS

=-24V, V

GS

=0V  

-1  

uA  

nA  

I

GSS  

V

DS

=

±

20V, V

DS

=0V  

±100  

On characteristics  

V

GS

=-10V, I

D

=-4.1A  

V

GS

=-4.5V, I

D

=-3A  

V

DS

=-5V, I

D

=-4A  

50  

68  

60  

87  

Drain-Source On-Resistance  

(note 1)  

Forward trans conductance  

Gate-Threshold voltage*  

Dynamic characteristics (note 2)  

Input capacitance  

Output capacitance  

Reverse Transfer capacitance  

Switching characteristics (note 2)  

Turn-on Time  

Rise time  

Turn-off Time  

Fall time  

Drain-source diode characteristics and maximum ratings  

Diode forward voltage(note 1)  

R

DS(ON)  

mΩ  

g

fs  

5.5  

S

V

V

GS (th)  

V

DS

=V

GS

, I

D

=-250uA  

-1.0  

-1.4  

-3.0  

Ciss  

Coss  

Crss  

700  

120  

75  

V

DS

=-15V, V

GS

=0V,f=1MHz  

pF  

td(on)  

tr  

8.6  

5.0  

V

GS

=-10V, R

L

=3.6Ω,  

V

DS

=-15V, R

GEN

=3Ω  

ns  

V

td(off)  

tf  

28.2  

13.5  

V

SD  

I

S

=-1A, V

GS

=0V  

-1.0  

Notes: 1. Pulse

T

e

st: Pulse Width ≤300us, Duty Cycle≤2%.  

2. These parameters have no way to verify.  

version: 02  

AO3407  

P-CHANNEL ENHANCEMENT MOSFET  

Typical characteristics  

version: 02  

AO3407  

P-CHANNEL ENHANCEMENT MOSFET  

SOT-23 PACKAGE OUTLINE

Plastic surface mounted package  

焊盘设计参考

Precautions: PCB Design  

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  

version: 02