JUXING-JX3080K
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JX3080K
N-Channel Enhancement Mode MOSFET
1.Features
◆
30V MOSFET technology
◆
Low on-state resistance
◆
Fast switching
◆
Vgs±20V
V
DS
R
DS(on)
Typ.
3.8mΩ @ 10V
6.3mΩ @ 4.5V
I
D
Max.
80A
30V
2.Applications
◆
◆
Load Switching
D
S
G
TO-252
Schematic Diagram
Pin Description
3.Package Marking and Ordering Information
Part no.
Marking
Package
PCS/Tube
PCS/CTN.
TO-252
2,500
25,000
JX23080K
JX3080K
4.Absolute Max Ratings at Ta=25
℃
(Note1)
Parameter
Symbol
V
DSS
V
GSS
I
D
Maximum
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
30
±
20
V
V
80
A
Drain Current (Pulse), PW≤300μs
T
o
tal Dissipation
I
DP
280
A
P
D
46
W
mJ
℃
℃
Avalanche Energy, Single Pulsed
Junction
T
e
mperature
E
AS
T
j
169
150
Storage
T
e
mperature
T
stg
-55 to +150
Note 1: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may
be affected.
version: 01
JX3080K
N-Channel Enhancement Mode MOSFET
5.Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to case
R
θJC
2.72
℃
/W
Note 2
：
When mounted on 1 inch square copper board t ≤ 10sec The value in any given application depends
on the user’s specific board design.
6.Electrical Characteristics at Ta=25
℃
(Note 3)
Symbol
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
Drain to Source Breakdown Voltage
V
(BR)DSS
I
D
= 250μA, V
GS
= 0V
30
33.5
V
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
I
DSS
I
GSS1
V
DS
= 30
V
, V
GS
= 0V
V
GS
= ±20V, V
SS
= 0V
V
DS
=V
GS
, I
DS
=250μA
I
D
= 30A, V
GS
= 10V
I
D
= 20A, V
GS
= 4.5V
1
±100
2.2
4.6
9
μA
nA
V
V
GS(th)
1.2
1.7
3.8
–
–
mΩ
mΩ
pF
pF
pF
ns
Static Drain to Source On-State
Resistance
R
DS(on)
6.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
C
iss
C
oss
C
rss
t
d(on)
t
r
1615
245
216
7.5
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
V
DS
= 15V, I
D
= 30A,
V
GS
= 10
V
,
14.5
35
ns
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
ns
R
G
= 3Ω
9.6
ns
Q
g
33.8
8.5
nC
nC
nC
V
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 30A
T
o
tal Gate Charge
Q
gs
Q
gd
V
FSD
7.5
Diode Forward Voltage
I
S
= 30A, V
GS
= 0
0.3
0.8
1.2
Note 3
：
Product parametric performance is indicated in the Electrical Characteristics for the listed test
conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
version: 01
JX3080K
N-Channel Enhancement Mode MOSFET
7.Typical electrical and thermal characteristics
Typical Transfer Characteristics
Body Diode Characteristics
Capacitance Characteristics
Output Characteristics
On-resistance vs. Drain Current
Gate Charge Characteristics
version: 01
JX3080K
N-Channel Enhancement Mode MOSFET
Normalized Breakdown Voltage vs.
Junction Temperature
Normalized on Resistance vs.
Junction Temperature
Maximum Continuous Drain Current vs.
Case Temperature
Maximum Safe Operating Area
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
4
version: 01
JX3080K
N-Channel Enhancement Mode MOSFET
8.Package Dimensions
TO-25
2
(
D
-PAK)
Package Outline Dimensions
TO-252(D-PAK) mechanical data
A
B
b
C
D
E
F
G
H
L
L1 L2 L3
S
M
N
J
K
T
UNIT
max
6.7 5.5
0.86 2.5 6.3 0.6 1.8
0.55 3.1
1.4 1.0
1.75 0.1
0.45 2.7
0.8 0.6
1.40 0.0
3.16 1.80 4.83
ref. ref. ref.
TYPICAL TYPICAL
2.29
1.8
1.3
mm
mil
TYPICAL
min
6.3 5.1
0.66 2.1 5.9 0.4 1.3
max
264 217
33 98
248 24
71
22 122 55
39 69
18 106 31
24 55
4
0
90
TYPICAL
71
51
124 71 190
TYPICAL TYPICAL
ref. ref. ref.
min
248 201
26 83
232 16
51
version: 01
