JUXING-JX3090K
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JX3090K
N-Channel Enhancement Mode MOSFET
1.Features
30V MOSFET technology
Low on-state resistance
Fast switching
Vgs±20V
V
DS
R
DS(on)
Typ.
3.1mΩ @ 10V
4.7mΩ @ 4.5V
I
D
Max.
90A
30V
2.Applications
Power Switching Application
Load Switching
D
S
G
TO-252
Schematic Diagram
Pin Description
3.Package Marking and Ordering Information
Part no.
Marking
Package
PCS/Reel
PCS/CTN.
JX3090K
JX3090K
TO-252
2,500
25,000
4.Absolute Max Ratings at Ta=25
℃
(Note1)
Parameter
Symbol
V
DSS
V
GSS
I
D
Maximum
Units
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
30
±
20
V
90
A
Drain Current (Pulse), PW≤300μs
Total Dissipation
I
DP
360
A
P
D
65
W
Avalanche Energy, Single Pulsed
Junction
T
emperature
E
AS
T
j
240
mJ
℃
℃
175
Storage
T
emperature
T
stg
-55 to +175
Note 1: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and reliability
may be affected.
version: 01
JX3090K
N-Channel Enhancement Mode MOSFET
5.Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to case
R
θJC
2.3
℃
/W
Note 2
：
When mounted on 1 inch square copper board t ≤ 10sec The value in any given application
depends on the user’s specific board design.
6.Electrical Characteristics at Ta=25
℃
(Note 3)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Units
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
(BR)DSS
I
D
= 250μA, V
GS
= 0V
30
V
I
DSS
I
GSS
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
SS
= 0V
V
DS
=V
GS
, I
DS
=250μA
I
D
= 30A, V
GS
= 10V
I
D
= 20A, V
GS
= 4.5V
1
μA
nA
V
±100
2.5
V
GS(th)
1.0
1.6
3.1
4.7
1700
320
300
21
–
–
3.6
mΩ
mΩ
pF
pF
pF
ns
Static Drain to Source On-State
Resistance
R
DS(on)
7.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
C
iss
C
oss
C
rss
t
d(on)
t
r
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
32
ns
V
DS
= 15V, I
D
= 30A,
V
GS
= 10V, R
G
= 3Ω
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
60
ns
34
ns
Q
g
45
nC
nC
nC
V
V
DS
= 15V,
V
GS
= 10V,
I
D
= 30A
Total Gate Charge
Q
gs
Q
gd
V
FSD
3
15
Diode Forward Voltage
I
S
= 30A, V
GS
= 0
0.4
0.85
1.2
Note 3
：
Product parametric performance is indicated in the Electrical Characteristics
for the listed test
conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
version: 01
JX3090K
N-Channel Enhancement Mode MOSFET
7.Typical electrical and thermal characteristics
Output Characteristics
Transfer Characteristics
Rdson-Drain Current
Body Diode Characteristic
Gate Charge
Capacitance Characteristics
version: 01
JX3090K
N-Channel Enhancement Mode MOSFET
Normalized on Resistance vs.
Junction Temperature
Normalized Breakdown Voltage vs.
Junction Temperature
Maximum Continuous Drain Current
vs. Case Temperature
Maximum Safe Operating Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
version: 01
JX3090K
N-Channel Enhancement Mode MOSFET
8.Package Dimensions
TO-25
2
(
D
-PAK)
Package Outline Dimensions
TO-252(D-PAK) mechanical data
A
B
b
C
D
E
F
G
H
L
L1 L2 L3
S
M
N
J
K
T
UNIT
max
6.7 5.5
0.86 2.5 6.3 0.6 1.8
0.55 3.1
1.4 1.0
1.75 0.1
0.45 2.7
0.8 0.6
1.40 0.0
3.16 1.80 4.83
ref. ref. ref.
TYPICAL TYPICAL
2.29
1.8
1.3
mm
mil
TYPICAL
min
6.3 5.1
0.66 2.1 5.9 0.4 1.3
max
264 217
33 98
248 24
71
22 122 55
39 69
18 106 31
24 55
4
0
90
TYPICAL
71
51
124 71 190
TYPICAL TYPICAL
ref. ref. ref.
min
248 201
26 83
232 16
51
version: 01
