JUXING-JX3400

JX3400  

N

-Channel Enhancement Mode Power MOSFET  

V

(BR)DSS  

30V  

R

DS(ON)MAX  

35mΩ@10V  

40mΩ@4.5V  

52mΩ@2.5V  

I

D  

5.8A  

特

征

Features  

SOT-23  





High dense cell design for extremely low R

DS(on).  

Exceptional on-resistance and maximum DC current capability.  

Load/Power Switching.  





Interfacing Switching  

机械数

据

Mechanical Data  



封装

: SOT-23

封

装

SOT-23 Small Outline Plastic Package.  



环氧树

脂

UL

易燃等

级

Epoxy UL: 94V-0.  



安装位置

:

任

意

Mounting Position: Any.  

极限值和温度特性

(

TA = 25

℃

除非另有规定

)  

Maximum Ratings & Thermal Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

参数

Parameters  

Drain-Source Voltage  

Gate-Source Voltage  

Continuous Drain Current  

Drain Current-Pulsed(note 1)  

Power Dissipation  

符

号

Symbol  

V

DS  

数

值

Value  

30  

单

位

Unit  

V

V

V

GS  

±

12  

5.8  

30  

350  

150  

I

D  

I

DM  

P

D  

T

j  

A

mW  

℃

Junction

T

e

mperature  

Storage

T

e

mperature  

Thermal Resistance From Junction to Ambient (note 2)  

T

s

tg  

R

θJA  

-50-+150  

357  

℃

℃

/W  

电特性

(

TA = 25

℃

除非另有规定

)  

Electrical Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

界

限

Limits  

参数  

Parameter  

符号  

Symbols  

测试条件  

Test Condition  

单位  

Unit  

Min  

Typ  

Max  

Off characteristics  

V

(BR)DSS  

I

DSS  

V

GS

=0V, I

D

=250uA  

30  

V

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain current  

Gate-body Leakage  

V

DS

=24V, V

GS

=0V  

V

DS

=12V, V

DS

=0V  

1

uA  

nA  

I

GSS  

±100  

On characteristics  

V

GS

=10V, I

D

=5.8A  

V

GS

=4.5V, I

D

=5A  

V

GS

=2.5V, I

D

=4A  

V

DS

=5V, I

D

=5A  

35  

40  

52  

Drain-Source On-Resistance  

(note 3)  

R

DS(ON)  

mΩ  

g

fs  

8

S

V

Forward trans conductance  

Gate-Threshold voltage*  

Dynamic characteristics (note 4,5)  

Input capacitance  

V

GS (th)  

V

DS

=V

GS

, I

D

=250uA  

0.7  

1.4  

Ciss  

Coss  

Crss  

Rg  

1050  

V

DS

=15V, V

GS

=0V,f=1MHz  

V

DS

=0V, V

GS

=0V,f=1MHz  

pF  

Ω

99  

77  

Output capacitance  

Reverse Transfer capacitance  

Gate resistance  

3.6  

Switching characteristics (note 4,5)  

td(on)  

tr  

5

7

Turn-on Time  

Rise time  

Turn-off Time  

Fall time  

V

GS

=10V, R

L

=2.7Ω,  

V

DS

=15V, R

GEN

=3Ω  

ns  

V

td(off)  

tf  

40  

6

Drain-source diode characteristics and maximum ratings  

V

SD  

I

S

=1A, V

GS

=0V  

1.0  

Diode forward voltage  

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t<5 sec.  

3. Pulse

T

e

st: Pulse Width ≤300us, Duty Cycle≤2%.  

4. Guaranteed by design, not subject to production testing.  

version: 02  

JX3400  

N

-Channel Enhancement Mode Power MOSFET  

Typical characteristics  

version: 02  

3400  

N

-Channel Enhancement Mode Power MOSFET  

Plastic surface mounted package  

焊盘设计参考

Precautions: PCB Design  

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  

version: 02