JUXING-MMBT2907A-2F
| Part # | JUXING-MMBT2907A-2F |
Download  | JUXING-MMBT2907A-2F |
MMBT2907A
TRANSISTOR (PNP)
SOT-23
FEATURES
z
z
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
Marking: 2F
1. BASE
2. EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
3. COLLECTOR
Symbol
Parameter
Value
Unit
V
V
CBO
V
CEO
V
EBO
I
C
-60
-60
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
-5
V
Collector Current -Continuous
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
-600
mA
mW
℃
/W
℃
℃
P
D
250
R
θ
JA
500
T
J
150
T
stg
Storage
T
e
mperature
-55 to +150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CBO
Test conditions
M
in
-60
-60
-5
T
yp
M
ax
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10
μ
A,I
E
=0
I
C
=-10mA,I
B
=0
V
I
E
=-10
μ
A,I
C
=0
V
V
CB
=-50
V
,
I
E
=0
-20
-10
-50
300
nA
nA
nA
Base cut-off current
I
EBO
V
E
B
=-3
V
,
I
C
=0
Collector cut-off current
I
CEX
V
CE
=-30
V
, V
BE(off)
=-0.5V
V
CE
=-10
V
,
I
C
=-150mA
V
CE
=-10
V
,
I
C
=-0.1mA
V
CE
=-10
V
,
I
C
=-1mA
V
CE
=-10
V
,
I
C
=-10mA
V
CE
=-10
V
,
I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20
V
,
I
C
=-50mA,f=100MHz
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)*
V
CE(sat)*
V
BE(sat)*
V
BE(sat)*
f
T
100
75
DC current gain
100
100
50
-0.4
-1.6
-1.3
-2.6
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Delay time
200
MHz
n
s
n
s
n
s
n
s
t
d
10
25
V
CE
=-30
V
,
I
C
=-150mA,
B1
=-15mA
Rise time
t
r
Storage time
t
S
225
60
V
CE
=-6
V
,
I
C
=-150mA,
I
B1
=- I
B2
=- 15mA
Fall time
t
f
*Pulse test: t
p
≤
300
μ
s
,
δ≤
0.02.
version: 02
MMBT2907A
TRANSISTOR (PNP)
Characteristics at
T
a =
2
5
°
C
h
FE
——
I
C
Static Characteristic
-0.25
-0.20
-0.15
-0.10
-0.05
-0.00
500
400
300
200
100
0
COMMON EMITTER
V
CE
=-10V
COMMON EMITTER
T
a
=25
℃
-800uA
-720uA
-640uA
-560uA
T
a
=100
℃
-480uA
-400uA
-320uA
T
a
=25
℃
-240uA
-160uA
I
B
=-80uA
-0
-2
-4
-6
-8
-10
-12
-600
-1.0
150
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
—— I
C
-0.9
-0.6
-0.3
-0.0
-1.2
-0.8
-0.4
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-0.0
100
-1
-10
-100
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
-600
-100
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
COMMON EMITTER
V
CE
=-10V
℃
C
ib
C
ob
T
a
=100
℃
-10
-1
10
T
a
=25
℃
-0.1
1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1
-10
-20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
P
c
—— T
a
300
250
200
150
100
50
0
0
25
50
75
100
125
AMBIENT TEMPERATURE
T
a
(
℃
)
version: 02
MMBT2907A
TRANSISTOR (PNP)
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
version: 02
