JUXING-MMBTA05
| Part # | JUXING-MMBTA05 |
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MMBTA05
TRANSISTOR(NPN)
SOT-23
特
征
Features
驱动三极
管
Driver transistor
最大功率耗
散
300mW; Power Dissipation of 300mW
高稳定性和可靠性。
High Stability and High Reliability
机械数
据
Mechanical Data
封装
: SOT-23
封
装
SOT-23 Small Outline Plastic Package
环氧树
脂
UL
易燃等
级
Epoxy UL: 94V-0
安装位置
:
任
意
Mounting Position: Any
Marking: 1H
极限值和温度特性
(
TA = 25
℃
除非另有规定
)
Maximum Ratings & Thermal Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
参数
Parameters
符
号
Symbol
V
CBO
V
CEO
V
EBO
I
C
数
值
Value
单
位
Unit
Collector-Base Voltage
60
60
V
V
Collector-Emitter Voltage
Emitter -Base Voltage
4
V
Collector Current-Continuous
Collector Power Dissipation
Junction
T
e
mperature
500
mA
mW
℃
P
C
300
T
j
150
Storage
T
e
mperature
T
s
tg
-55-+150
417
℃
Thermal resistance From junction to ambient
R
θJA
℃
/W
电特性
(
TA = 25
℃
除非另有规定
)
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
界
限
Limits
参数
Parameter
符号
Symbols
测试条件
Test Condition
单位
Unit
Min
60
60
4
Max
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)*
h
FE(2)*
V
CE(sat)*
V
BE
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
C
=100uA, I
E
=0
V
V
V
nA
nA
nA
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=60V, I
B
=0
100
100
100
400
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=1V,I
C
=100mA
V
CE
=2V, I
C
=10mA,f=100MHz
100
100
DC current gain
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
0.25
1.20
V
V
MHz
f
T
100
*Pulse test: pulse width
≤
300us, duty cycle
≤2.0%.
version: 02
MMBTA05
TRANSISTOR(NPN)
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package
焊盘设计参考
Precautions: PCB Design
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs
version: 02
