JUXING-S8550
| Part # | JUXING-S8550 |
Download  | JUXING-S8550 |
S8550
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT-23
FEATURES
z
Complimentary to S8050
Collector current: I
C
=0.5A
z
1. BASE
2. EMITTER
3. COLLECTOR
MARKING :
2TY
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.5
0.3
A
P
C
W
℃
℃
T
j
150
T
stg
Storage
T
e
mperature
-55-150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
T
e
st conditions
I
C
= -100
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
Min
-40
-25
-5
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
I
E
= -100
μ
A, I
C
=0
V
CB
= -40
V
,
I
E
=0
V
CE
= -20
V
,
I
B
=0
V
EB
= -3
V
,
I
C
=0
-0.1
-0.1
-0.1
400
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
h
FE(1)
V
CE
= -1
V
,
I
C
= -50mA
120
DC current gain
h
FE(2)
V
CE
= -1
V
,
I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
-0.6
-1.2
V
V
V
CE
= -6
V
,
I
C
= -20mA
f=
30MHz
Transition frequency
150
MHz
f
T
CLASSIFICATION OF h
FE
(1)
Rank
L
H
J
120-200
200-350
300-400
Range
version: 02
Typical Characteristics
V
CE
I
C
——
I
C
h
FE
——
-90
500
-400uA
COMMON
EMITTER
T
a
=25
℃
-80
-70
-60
T
a
=100
℃
-360uA
-320uA
-280uA
T
a
=25
℃
-240uA
-200uA
-160uA
100
-50
-40
-30
-120uA
-80uA
-20
-10
-0
I
B
=-40uA
COMMON EMITTER
V
CE
=-1V
10
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
I
C
V
BEsat
——
V
CEsat
——
I
C
-1200
-500
-800
-100
β
=10
β
=10
-10
-400
-500
-1
-10
-100
-500
-1
-10
-100
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
f
T
——
I
C
—— V
BE
I
C
400
-100
100
-10
COMMON EMITTER
V
CE
=-6V
COMMON EMITTER
V
CE
=-1V
T
a
=25
℃
10
-1
-1
-10
-100
-0
-300
-600
-900
-1200
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
C
ob
/C
ib
—— V
CB
/V
EB
P
C
—— T
a
400
300
200
100
0
50
C
ib
C
ob
10
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
1
-0.1
0
25
50
75
100
125
150
-1
-10
-20
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
S8550
SOT-23 Plastic-Encapsulate Transistors
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
version: 02
