KEC-Semicon-2N3904S-RTK-PS

SEMICONDUCTOR  

2N3904S  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

GENERAL PURPOSE APPLICATION.  

SWITCHING APPLICATION.  

E

L

B

L

DIM MILLIMETERS  

FEATURES  

_

+

A

B

C

D

E

2.93 0.20  

1.30+0.20/-0.15  

1.30 MAX  

0.40+0.15/-0.05  

2.40+0.30/-0.20  

1.90  

·

Low Leakage Current  

2

3

: I

CEX

=50nA(Max.), I

BL

=50nA(Max.)  

@V

CE

=30V, V

EB

=3V.  

1

G

H

J

0.95  

·

Excellent DC Current Gain Linearity.  

·

Low Saturation Voltage  

0.13+0.10/-0.05  

0.00 ~ 0.10  

0.55  

K

L

Q

P

P

M

N

P

0.20 MIN  

1.00+0.20/-0.10  

7

: V

CE(sat)

=0.3V(Max.) @I

C

=50mA, I

B

=5mA.  

·

Low Collector Output Capacitance  

: C

ob

=4pF(Max.) @V

CB

=5V.  

·

Complementary to 2N3906S.  

Q

0.1 MAX  

M

1. EMITTER  

2. BASE  

3. COLLECTOR  

MAXIMUM RATING

 

(Ta=25

℃

)  

CHARACTERISTIC  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

SYMBOL  

RATING  

UNIT  

V

SOT-23  

V

CBO  

V

CEO  

V

EBO  

I

C  

60  

40  

V

6

V

200  

mA  

mA  

mW  

℃

I

B  

Base Current  

50  

Marking  

Lot No.  

P

C

*  

T

j  

Collector Power Dissipation  

Junction Temperature  

Storage Temperature Range  

350  

150  

Type Name  

ZC  

T

stg  

-55

∼

150  

℃

* PC : Package Mounted On 99.5% Alumina 10

×

8

×

0.6

㎜

)  

2003. 2. 25  

Revision No : 3  

1/4  

2N3904S  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

℃

)  

CHARACTERISTIC  

Collector Cut-off Current  

SYMBOL  

I

CEX  

TEST CONDITION  

MIN.  

–

TYP.  

MAX.  

50  

50  

–

UNIT  

nA  

nA  

V

V

CE

=30V, V

EB

=3V  

V

CE

=30V, V

EB

=3V  

I

C

=10

μ

A, I

E

=0  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

I

BL  

Base Cut-off Current  

–

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

h

FE

(1)  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage

 

*  

Emitter-Base Breakdown Voltage  

60  

40  

6.0  

40  

70  

100  

60  

30  

–

I

C

=1mA, I

B

=0  

–

V

I

E

=10

μ

A, I

C

=0  

–

V

V

CE

=1V, I

C

=0.1mA  

V

CE

=1V, I

C

=1mA  

–

h

FE

(2)  

–

h

FE

(3)  

V

CE

=1V, I

C

=10mA  

V

CE

=1V, I

C

=50mA  

V

CE

=1V, I

C

=100mA  

I

C

=10mA, I

B

=1mA  

I

C

=50mA, I

B

=5mA  

I

C

=10mA, I

B

=1mA  

I

C

=50mA, I

B

=5mA  

V

CE

=20V, I

C

=10mA, f=100MHz  

V

CB

=5V, I

E

=0, f=1MHz  

V

BE

=0.5V, I

C

=0, f=1MHz  

DC Current Gain  

*

300  

–

h

FE

(4)  

h

FE

(5)  

–

V

CE(sat)  

V

CE(sat)  

V

BE(sat)  

V

BE(sat)  

f

T  

1

2

1

2

0.2  

0.3  

0.85  

0.95  

–

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

*

*

V

V

–

0.65  

–

Transition Frequency  

300  

–

MHz  

pF  

C

ob  

Collector Output Capacitance  

Input Capacitance  

4.0  

8.0  

10  

8.0  

400  

40  

C

ib  

–

pF  

h

ie  

Input Impedance  

1.0  

0.5  

100  

1.0  

k

Ω  

Voltage Feedback Ratio  

Small-Signal Current Gain  

Collector Output Admittance  

x10

-4  

h

re  

V

CE

=10V, I

C

=1mA, f=1kHz  

h

fe  

Ω

h

oe  

μ

V

CE

=5V, I

C

=0.1mA Rg=1k

Ω

,  

f=10Hz

∼

15.7kHz  

Noise Figure  

NF  

t

d  

–

–

5.0  

dB  

Delay Time  

–

–

35  

t

r  

t

stg  

t

f  

Rise Time  

Switching Time  

–

–

–

–

–

–

35  

200  

50  

nS  

Storage Time  

Fall Time  

* Pulse Test : Pulse Width

≦

300

μ

S, Duty

 

Cycle

≦

2%.  

2003. 2. 25  

Revision No : 3  

2/4  

2N3904S  

2003. 2. 25  

Revision No : 3  

3/4  

2N3904S  

2003. 2. 25  

Revision No : 3  

4/4