KEC-Semicon-2N7002KB-RTK-HP
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PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
N-Ch Small Signal Trench MOSFET
2N7002KB
PACKAGE DIMENSION(SOT-23)
This Small Signal Trench MOSFET has low on resistance,
low gate charge and ESD Protected characteristics.
It is mainly suitable for Battery Operated Systems
and Direct logic-level Interface applications.
E
B
DIM MILLIMETERS
L
L
A
B
C
D
E
G
H
J
2.93±0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
0.95
1
0.13+0.10/-0.05
0.00~0.10
0.55
K
L
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
P
P
FEATURES
1. Source
2. Gate
3. Drain
• V
DSS
=60V, I
D
=0.3A
M
• Drain-Source ON Resistance :
R
DS(ON)
(Max)=2.2Ω @V
GS
=10V
• ESD Protected: 2KV
PIN CONFIGURATION
D
APPLICATION
• Battery Operated Systems
• Direct logic-level Interface
• Voltage controlled small signal switch
G
S
MARKING CODE
➁
ORDERING INFORMATION
➀
WE
PART NUMBER
QTY PER BOX
9,000pcs
BOX SIZE
➀
PRODUCT Code
➁
LOT NO.
2N7002KB-RTK/HP
185X185X40mm
March 08, 2022
Rev.1
1 / 6
© KEC Corporation
PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
MAXIMUM RATING (T
J
=25
℃
)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
V
DSS
V
GSS
I
D
RATING
60
UNIT
V
V
Gate-Source Voltage
±20
@T
A
= 25
℃ (Note 1, 2)
0.3*
Drain Current
A
I
DP
Pulsed (Note 1, 3)
1.0*
P
D
Drain Power Dissipation
@T
A
= 25
℃ (Note 2)
400
mW
℃
T
J
Maximum Junction Temperature
Operation and Storage Temperature Range
Thermal Characteristics
150
T
opr
, T
stg
-55~150
℃
R
thJA
Thermal Resistance, Junction-to-Ambient
@T
A
= 25
℃ (Note 2)
310
℃/W
* : Drain current limited by maximum junction temperature
March 08, 2022
Rev.1
2 / 6
© KEC Corporation
PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
ELECTRICAL CHARACTERISTICS(T
J
= 25
℃
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BV
DSS
–
–
–
I
D
=250
μ
A, V
GS
=0V
60
–
Drain-Source Breakdown Voltage
Drain Cut-off Current
V
10
I
DSS
V
DS
=60V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=0.3A
V
GS
=4.5V, I
D
=0.2A
μ
A
V
th
1.0
–
Gate Threshold Voltage
Gate Leakage Current
2.5
±10
2.2
2.9
V
μ
A
Ω
I
GSS
–
–
–
–
1.7
2.1
R
DS(ON)
Drain-Source ON Resistance
Ω
Dynamic
t
d(on)
t
r
t
d(off)
t
f
5
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Turn-on Delay time
Turn-on Rise time
V
DD
=30V, I
D
=0.2A
V
GS
=10V, R
G
=25
Ω
ns
pF
(Note 3)
40
6
Turn-off Delay time
Turn-off Fall time
C
iss
15
3.2
1.2
Input Capacitance
V
DS
=25V, V
GS
=0V, f=1.0MHz
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Diode Forward Voltage
I
S
V
GS
< V
th
–
–
–
–
0.25
1.2
A
V
V
SD
I
S
=0.25A, V
GS
=0V
Note 1) Max. current is limited by junction temperature
Note 2) Surface mounted on 1 in
2
FR-4 board with 1oz
Note 3) Pulse Test (Pulse width
≤
300
μs, Duty Cycle
≤
2%)
SWITCHING TIME TEST CIRCUIT
R
L
V
DS
90%
V
DD
R
g
V
DS
10%
V
GS
t
d(on)
V
t
d(off)
GS
t
t
f
r
t
on
t
off
March 08, 2022
Rev.1
3 / 6
© KEC Corporation
PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
Fig1. I
– V
Fig2. I
– V
D
D
GS
DS
10
1
1.2
V
=5V
DS
10V
1.0
C
T =25
5V
j
0.8
4V
100
C
0.6
0.4
0.1
V
GS
=3V
0.2
0
0.01
0
1
2
3
4
5
0
2
4
6
8
10
Drain – Source Voltage
V
DS
(V)
Gate – Source Voltage
V
GS
(V)
Fig3. R
– I
D
Fig4. R
– V
GS
DS(ON)
DS(ON)
6
5
6
5
3V
4
3
2
1
4
3
100
C
4V
V
5V
2
1
T =25
C
j
=10V
GS
I =0.3A
D
0
0
0.1
0.15
0.2
0.25
0.3
0.35
0
2
4
6
8
10
Drain Current
I
D
(A)
Gate – Source Voltage
V
GS
(V)
Fig6. BV
– T
j
DSS
Fig5. R
– T
j
DS(ON)
1.2
1.1
2.5
V
GS
= 0V
I
D
= 250uA
V
GS
= 10V
I
D
= 0.3A
2.0
1.5
1.0
1.0
0.9
0.5
0
0.8
-75
-25
25
75
125
175
-75
-25
25
75
125
175
Junction Temperature
Tj (
)
C
Junction Temperature
Tj (
)
C
March 08, 2022
Rev.1
4 / 6
© KEC Corporation
PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
Fig7. V
th
– T
j
Fig8. I
– V
S
SD
1.6
1.4
10
1
V
DS
= V
GS
I
D
= 250uA
100 C
1.2
1.0
25 C
0.1
0.01
0.8
0.6
0.4
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1.0
(V)
1.2
Junction Temperature
Tj (
)
C
Source – Drain Voltage V
SD
Fig9. C
– V
DS
100
10
1
C
iss
C
oss
C
rss
f=1MHz, V
=0V
GS
0.1
0
20
40
60
Drain – Source Voltage
V
DS
(V)
Fig10. Transient Thermal Response Curve
(Junction – Ambient)
10
3
Duty=0.5
10
2
0.2
0.1
0.05
P
10
1
DM
t
1
t
2
10
-1
Single Pulse
– R
th(j-a)
=310 C/W Max.
– Duty Factor, D= t
1
/t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
TIME (sec)
October 18, 2022
Rev.O
5 / 6
© KEC Corporation
PRODUCT DATASHEET
N-Ch Small Signal Trench MOSFET – 2N7002KB
PACKAGE INFORMATION(SOT-23)
E
DIM MILLIMETERS
L
B
L
A
B
C
D
E
G
H
J
2.93±0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
0.95
1
0.13+0.10/-0.05
0.00~0.10
0.55
K
L
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
P
P
1. Source
2. Gate
3. Drain
M
RECOMMENDED PAD DIMENSION
(Uni
t
:
m
m)
0.8
0.95 0.95
March 08, 2022
Rev.1
6 / 6
© KEC Corporation
PRECAUTION ON USING KEC PRODUCTS
1. The
products described in this data are intended to be used in general-purpose electronic equipment.
(Office equipment, telecommunication equipment, measuring equipment, home appliances)
2. When
you intend to use these products with equipment or device which require an extremely high of reliability and special applications (such as
automobile, air travel aerospace, transportation equipment, life support, system and safety devices) in which special quality and reliability
and the failure or malfunction of products may directly jeopardize or harm the human body or damage to property and any application other
than the standard application intended, please be sure to consult with our sales representative in advance.
3. On
designing your application, please use product within the ranges guaranteed by KEC for maximum rating, operating supply voltage range,
heat radiation characteristics and other characteristics. User shall be responsible for failure or damage when used beyond the guaranteed ranges.
4. The
technical information described in this data is limited to showing representative characteristics and applied circuit examples of the products
and it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license.
5. What
are described in the data may be changed without any prior notice to reflect new technical development. Please confirm that you have
received the latest product standards or specification before final design, purchase or use.
6. Although
KEC is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to
various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with
the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. KEC shall
have no responsibility for any damages arising out of the use of our Products beyond the rating specified by KEC.
For additional information,
please contact your local Sales Representative.
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KEC CORPORATION
PHONE : +82-2-2025-5000
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OFFICE
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KECCORP.COM
K
E
C
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C
O
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K
R
© KEC Corporation
