KEC-Semicon-KF10N60F-U-PS
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KF10N60P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF10N60P
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
O
C
F
E
I
DIM MILLIMETERS
G
_
A
B
C
D
E
F
9.9 + 0.2
B
15.95 MAX
Q
1.3+0.1/-0.05
_
FEATURES
0.8 + 0.1
_
3.6 0.2
+
·
V
DSS
=600V, I
D
=10A
·
Drain-Source ON Resistance :
R
DS(ON)
(Max)=0.73
Ω
@V
GS
=10V
·
Qg(typ.)= 29.5nC
K
_
P
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
G
H
I
M
N
L
J
D
_
J
13.08 + 0.3
1.46
H
K
L
M
N
O
P
N
_
1.4 0.1
+
MAXIMUM RATING
(Tc=25
℃
)
_
1.27 0.1
+
_
2.54 0.2
+
RATING
_
4.5 0.2
+
CHARACTERISTIC
SYMBOL
UNIT
_
2.4 0.2
+
1
2
3
1. GATE
2. DRAIN
KF10N60P
KF10N60F
_
Q
9.2
+
0
.2
3. SOURCE
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25
℃
600
V
V
±
30
TO-220AB
10
6
10*
6*
I
D
Drain Current
@T
C
=100
℃
A
KF10N60F
I
DP
Pulsed (Note1)
25
25*
C
A
Single Pulsed Avalanche Energy
(Note 2)
E
AS
360
16.5
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
DIM
MILLIMETERS
E
_
10.16 0.2
+
A
B
C
D
E
Peak Diode Recovery dv/dt
(Note 3)
_
15.87 0.2
dv/dt
V/ns
+
_
2.54 0.2
+
_
0.8 0.1
+
178
46
W
W/
℃
℃
Tc=25
℃
Drain Power
Dissipation
_
+
P
D
3.18
0.1
_
3.3 0.1
+
1.43
0.37
F
Derate above 25
℃
_
12.57 0.2
+
G
H
J
L
M
N
T
j
Maximum Junction Temperature
Storage Temperature Range
150
_
0.5 0.1
+
R
_
13.0 0.5
+
T
stg
-55
∼
150
℃
_
K
L
3.23 0.1
+
D
1.47 MAX
Thermal Characteristics
1.47 MAX
M
N
O
Q
R
N
H
_
2.54 0.2
+
R
thJC
R
thJA
Thermal Resistance, Junction-to-Case
0.7
2.7
℃
/W
℃
/W
_
6.68 0.2
+
_
Thermal Resistance,
Junction-to-Ambient
4.7
+
_
0.2
1. GATE
2. DRAIN
3. SOURCE
62.5
62.5
2.76 0.2
+
1
2
3
* : Drain current limited by maximum junction temperature.
*Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
(KF10N60P, KF10N60F)
D
G
S
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Revision No : 1
1/7
KF10N60P/F
ELECTRICAL CHARACTERISTICS
(Tc=25
℃
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP.
MAX. UNIT
Static
BV
DSS
Breakdown Voltage Temperature Coefficient
Δ
BV
DSS
/
Δ
T
j
I
D
=250
μ
A, Referenced
to 25
℃
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
600
–
–
–
V
V/
℃
μ
A
V
–
–
0.6
I
DSS
V
th
V
DS
=600V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=
±
30V, V
DS
=0V
V
GS
=10V, I
D
=5A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
–
10
2.5
–
–
–
4.5
±
100
0.73
I
GSS
nA
Ω
R
DS(ON)
–
0.59
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
–
–
–
–
–
–
–
–
–
–
26
6
–
–
–
–
–
–
–
–
–
–
V
DS
=480V, I
D
=10A
V
GS
=10V
Gate-Source Charge
Gate-Drain Charge
nC
ns
pF
A
(Note4,5)
(Note4,5)
10
Turn-on Delay time
32
V
DD
=300V
I
D
=10A
Turn-on Rise time
35
t
d(off)
t
f
Turn-off Delay time
Turn-off Fall time
88
R
G
=25
Ω
30
C
iss
C
oss
C
rss
Input Capacitance
1350
140
13
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
–
–
–
–
–
–
–
10
40
1.4
–
V
GS
<V
th
I
S
=10A, V
GS
=0V
–
V
ns
350
4.2
I
S
=10A, V
GS
=0V,
dIs/dt=100A/
μ
s
Q
rr
–
μ
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.8mH,
I
S
=10A, V
DD
=50V, R
G
=25
Ω
, Starting
T
j
=25
℃
.
Note 3) I
S
≤
10A, dI/dt
≤
200A/
㎲
, V
DD
≤
BV
DSS
, Starting T
j
=25
℃
.
Note 4) Pulse Test : Pulse width
≤
300
㎲
, Duty
Cycle
≤
2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF10N60
KF10N60
2
813
F
2
801
P
1
2
PRODUCT NAME
LOT NO
2013. 5. 03
Revision No : 1
2/7
KF10N60P/F
Fig1. I
– V
Fig2. I
– V
D
D
GS
DS
100
10
V
=30V
DS
10
1
V
V
=10V
GS
=7V
GS
V
=5V
GS
100
C
25
C
10
0
1
10
-1
0.1
0.1
10
Drain – Source Voltage
V
DS
(V)
2
4
6
8
10
1
100
Gate – Source Voltage
V
GS
(V)
Fig3. BV
– T
Fig4. R
– I
DSS
j
DS(ON) D
1.2
1.1
1.0
0.9
0.8
2.4
2.0
1.6
1.2
0.8
0.4
0
V
GS
= 0V
I
DS
= 250
V
=6V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
5
10
Drain Current
I
D
(A)
15
20
Junction Temperature
Tj (
)
C
Fig6. R
– T
j
DS(ON)
Fig5. I
– V
S
SD
10
2
10
1
10
0
10
-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
GS
= 5A
DS
100
C
25
C
-100
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.8
(V)
Junction Temperature T
(
)
C
Source – Drain Voltage V
SD
j
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Revision No : 1
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KF10N60P/F
Fig 7. C
– V
DS
Fig8. Q
– V
g
GS
10
4
10
3
10
2
10
1
12
10
8
I
D
=10A
V
= 480V
DS
V
= 300V
DS
C
iss
V
= 120V
DS
6
C
oss
4
2
C
rss
40
0
5
15
20
35
40
0
10
25
30
(nC)
0
10
20
30
Gate – Charge
Q
g
Drain – Source Voltage
V
DS
(V)
Fig9. Safe Operation Area
Fig10. Safe Operation Area
(KF10N60F)
(KF10N60P)
10
2
10
1
10
2
10
1
10
µ
s
100
µ
s
10
µ
s
100
µ
s
1ms
10ms
1ms
10
0
10
-1
10
-2
10
0
10
-1
10
-2
Operation in this
area is limited by R
DS(ON)
Operation in this
10ms
area is limited by R
DS(ON)
DC
DC
T =
25
c
T =
25
C
C
c
j
C
T =
150
j
C
T =
150
Single pulse
Single pulse
10
2
10
3
10
2
10
3
10
0
10
1
10
0
10
1
Drain – Source Voltage V
(V)
Drain – Source Voltage V
(V)
DS
DS
Fig11. I
– T
D
j
14
12
10
8
6
4
2
0
25
50
75
125
)
150
100
Junction Temperature T
(
C
j
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Revision No : 1
4/7
KF10N60P/F
Fig12. Transient Thermal Response Curve
(KF10N60P)
10
0
10
-1
10
-2
Duty=0.5
0.2
0.1
P
DM
0.05
t
1
0.02
t
2
– Duty Factor, D= t
1
/t
2
10
0
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF10N60F)
10
1
10
0
Duty=0.5
0.2
P
0.1
DM
t
0.05
1
10
-1
10
-2
t
0.02
2
– R
th(j-c)
= 2.7 C/W Max.
– Duty Factor, D= t
1
/t
2
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TIME (sec)
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Revision No : 1
5/7
KF10N60P/F
Fig14. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig15. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LI
AS
BV
– V
DD
DSS
BV
DSS
L
I
AS
50V
25
Ω
I
D
(t)
V
DS
V
GS
V
DD
V
DS
(t)
10 V
Time
t
p
Fig16. Resistive Load Switching
V
DS
90%
R
L
0.5 V
DSS
10%
V
GS
t
d(off)
25
Ω
t
t
d(on)
t
on
r
t
f
V
DS
t
off
V
GS
10V
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Revision No : 1
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KF10N60P/F
Fig17. Source – Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
V
SD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
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Revision No : 1
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