KEC-Semicon-KGF75N65KDF-U-H
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SEMICONDUCTOR
KGF75N65KDF
TECHNICAL DATA
General Description
B
KEC Field Stop Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
A
O
S
K
It is designed for applications such as Power Factor Correction(PFC),
Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General
Converters.
MILLIMETERS
DIM
A
B
_
+
15.90 0.30
_
+
5.00 0.20
_
C
+
20.85 0.30
_
D
E
3.00
+
0.20
FEATURES
_
+
2.00 0.20
_
F
+
1.20 0.20
•
High speed switching
D
G
H
I
Max. 4.50
M
_
•
20.10
+
0.70
High ruggedness, temperature stable behavior
E
F
_
0.60 0.02
+
•
_
Extremely enhanced avalanche capability
J
I
14.70
+
0.20
_
K
M
2.00
+
0.10
_
2.40 0.20
+
ORDERING INFORMATION
_
+
3.60 0.30
O
P
_
5.45 0.30
+
P
P
_
Q
R
S
+
3.60 0.20
FULL NAME
PACKAGE
TO-247
SUFFIX
_
+
7.19 0.10
1
2
3
KGF75N65KDF-U/H
KGF75N65KDF-U/HE
–
TO-247(E)
Added code “E” to TO-247(E)
TO-247
MAXIMUM RATING
(Ta=25
)
CHARACTERISTIC
Collector-Emitter Voltage
SYMBOL RATING
UNIT
V
CES
V
GES
650
20
V
V
A
A
A
A
A
W
W
B
A
O
K
Gate-Emitter Voltage
S
MILLIMETERS
15.80 0.05
DIM
A
B
C
D
E
100
75
@Tc=25
_
+
I
C
U
Collector Current
_
+
5.00 0.08
@Tc=100
_
+
21.00 0.05
_
+
3.00 0.10
I
CM
*
Pulsed Collector Current
225
_
+
2.00 0.10
F
1.20
Max. 4.50
_
I
F
Diode Continuous Forward Current
Diode Maximum Forward Current
75
G
H
I
@Tc=25
+
19.92 0.10
_
+
0.60 0.01
I
FM
P
D
T
j
*
D
225
M
_
J
+
14.70 0.20
E
_
K
L
2.00 + 0.03
484
@Tc=25
_
+
3.20 0.20
Maximum Power Dissipation
I
F
_
+
M
N
O
P
2.41 0.05
242
@Tc=100
13.26
P
P
_
3.60 + 0.15
Maximum Junction Temperature
Storage Temperature Range
175
5.44
3.60
7.20
15
Q
R
S
T
stg
-55 to + 175
*Repetitive rating : Pulse width limited by max. junction temperature
1
2
3
U
5.00
THERMAL CHARACTERISTIC
CHARACTERISTIC
SYMBOL
R
t
h
J
C
MAX.
0.31
1.0
UNIT
/W
TO-247(E)
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
R
t
h
J
C
/W
R
t
h
J
A
40
/W
PIN CONNECTION
C
G
E
2022. 04. 20
Revision No : 1
1/8
KGF75N65KDF
ELECTRICAL CHARACTERISTICS
(Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
μA
BV
CES
I
CES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
V
GE
=0V , I
C
=250
650
–
–
–
V
μA
nA
V
V
GE
=0V, V
CE
=650V
–
–
250
100
6.4
2.2
–
I
GES
V
CE
=0V, V
GE
=
20V
–
V
GE(th)
V
GE
=V
CE,
I
C
=1mA
Gate Threshold Voltage
4.2
–
5.3
1.77
2.2
V
GE
=15V, I
C
=75A
V
V
CE(sat)
Collector-Emitter Saturation Voltage
V
GE
=15V, I
C
=75A, T
C
= 150
–
V
Dynamic
Q
g
Q
ge
Q
gc
t
d(on)
t
r
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
128
22
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
ns
V
CC
=400V, V
GE
=15V, I
C
= 75A
60
63
115
177
90
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
ns
V
CC
=400V, V
GE
=15V, I
C
=75A, R
G
=10Ω
ns
Inductive Load, T
C
= 25
(Note 1)
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
3.6
2.1
5.7
68
mJ
mJ
mJ
ns
t
d(on)
t
r
t
d(off)
t
f
123
202
61
ns
Turn-Off Delay Time
Fall Time
ns
V
CC
=400V, V
GE
=15V, I
C
=75A, R
G
=10Ω
ns
Inductive Load, T
C
= 150
(Note 1)
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Short Circuit Withstand Time
4.4
2.3
6.7
3555
198
41
mJ
mJ
mJ
pF
pF
pF
μs
C
ies
C
oes
C
res
t
sc
V
CE
=30V, V
GE
=0V, f=1MHz
V
CC
=300V, V
GE
=15V, T
C
=100
–
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
KGF
75N65KDF
025
1
2
3
Device Mark 1
Device Mark 2
Lot No
2022. 04. 20
Revision No : 1
2/8
KGF75N65KDF
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
SYMBOL
TEST CONDITION
T
C
=25
MIN.
TYP.
2.0
MAX.
UNIT
V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
F
I
F
= 75A
Diode Forward Voltage
T
C
=150
2.04
122
155
11.9
13
T
C
=25
t
rr
Diode Reverse Recovery Time
ns
A
T
C
=150
V
CC
= 400V
I
F
= 75A
T
C
=25
I
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
T
C
=150
μs
di/dt = 300A/
T
C
=25
0.8
Q
rr
μC
T
C
=150
1.4
2022. 04. 20
Revision No : 1
3/8
KGF75N65KDF
Fig 2.
Saturation Voltage Characteristics
Fig 1. Saturation Voltage Characteristics
225
200
175
150
125
100
75
225
200
175
150
125
100
75
Common Emitter
Common Emitter
V
GE
= 15V
T
C
= 25 C
15V
C
T
C
=25
12V
11V
V
GE
=20V
T
C
=
150 C
10V
9V
50
50
8V
7V
25
25
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector
– Emitter Voltage
V
CE
(V)
Collector
– Emitter Voltage
V
CE
(V)
Fig 4.
Saturation Voltage vs. V
Fig 3. Saturation Voltage vs. Case Temperature
GE
4
20
16
12
8
Common Emitter
V
GE
= 15V
Common Emitter
T
C
= 25
C
3
150A
50A
2
I
C
=25A
I
C
= 75A
75A
1
0
4
0
0
4
8
12
16
20
25
50
75
100
125
)
150
Case
Temperature T
C
(
Gate
– Emitter Voltage
V
GE
(V)
C
Fig 5. Saturation Voltage vs. V
Fig 6. Capacitance Characteristics
GE
20
16
12
8
10000
1000
Common Emitter
Cies
T
C
= 150
C
50A
75A
I
C
=25A
Coes
Cres
100
10
4
Common Emitter
V
GE
= 0
V
, f =
1
MHz
C
= 25
C
T
0
0
4
8
12
16
20
0
10
20
30
40
Gate
– Emitter Voltage
V
GE
(V)
Collector
– Emitter Voltage
V
CE
(V)
2022. 04. 20
Revision No : 1
4/8
KGF75N65KDF
Fig 7. Turn-On Characteristics vs. Gate Resistance
Fig 8. Turn-Off Characteristics vs. Gate Resistance
1000
10000
Common Emitter
CC
= 400
V
,
V
GE
V
= 15V
I
C
= 75A
C
= 25 C
T
C
T
=
150 C
1000
tr
100
td(off)
td(on)
100
10
tf
Common Emitter
CC
= 400
V
,
V
GE
V
= 15V
I
C
= 75A
C
= 25 C
T
C
T
=
150 C
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Gate
Resistance R
G
(
Ω
)
Gate
Resistance R
G
(
Ω
)
Fig 9. Switching Loss vs. Gate Resistance
Fig 10. Turn-On Characteristics vs. Collector Current
1000
10000
1000
Eon
tr
Eoff
100
td(on)
10
1
Common Emitter
CC
= 400
V
,
V
GE
= 15V
Common Emitter
V
V
CC
= 400
V
,
V
GE
= 15V
R =
10
I
C
= 75A
C
= 25 C
T
C
Ω
g
T
C
= 25 C
T
T
C
=
150 C
=
150 C
100
0
10
20
30
40
50
60
0
15
30
45
60
75
90
Gate
Resistance R
G
(
Ω
)
Collector Current
I
C
(
Α
)
Fig 11. Turn-Off Characteristics vs. Collector Current
Fig 12. Switching Loss vs. Collector Current
1000
10000
1000
100
Common Emitter
V
CC
= 400
V
,
V
GE
= 15V
td(off)
R
g
= 10
Ω
C
= 25 C
T
C
Eon
T
100
tf
=
150 C
Eoff
10
Common Emitter
V
CC
= 400
V
,
V
GE
= 15V
30
1
R =
10
Ω
g
T
C
= 25 C
T
C
=
150 C
0.1
0
15
45
60
75
90
0
15
30
45
60
75
90
Collector Current
I
C
(
Α
)
Collector Current
I
C
(
Α
)
2022. 04. 20
Revision No : 1
5/8
KGF75N65KDF
Fig 14. SOA Characteristics
18
1000
100
10
I
C
= 75A
50
μ
s
200
μ
s
1ms
10ms
1
DC
0.1
<
j
D=0, T
=25 C , T
175 C, V
=15V
C
GE
0.01
0
20
40
60
80 100
120 140 160
1
10
100
1000
Collector-Emitter Voltage
V
CE
(V)
Fig 15. Transient Thermal Impedance of IGBT
1.000
0.5
0.2
0.100
P
DM
t
1
t
2
1. Duty factor D=t1/t2
Single Pluse
0.0001
2. Peak Tj = Pdm
Zthjc + T
C
0.010
0.00001
0.001
0.01
0.1
1
10
Rectagular Pulse Duration (sec)
2022. 04. 20
Revision No : 1
6/8
KGF75N65KDF
Fig 16. Forward Characteristics
Fig 17. Reverse Recovery Current
20
18
16
14
225
T
C
= 25
C
200
175
150
T
C
= 25
C
T
C
= 150
C
di/dt=300A/
μ
s
12
10
8
125
100
75
6
50
4
di/dt=100A/
μ
s
25
0
2
0
0
1
2
3
4
5
0
15
30
45
60
75
90
Forward Voltage
V
F
(V)
Forward Current
I
F
(A)
Fig 18. Reverse Recovery Time
160
T
C
= 25
C
140
120
100
80
di/dt=100A/
μ
s
di/dt=300A/
μ
s
60
40
20
0
0
15
30
45
60
75
90
Forward Current
I
F
(A)
2022. 04. 20
Revision No : 1
7/8
KGF75N65KDF
19.
400V
20.
21.
2022. 04. 20
Revision No : 1
8/8
