KEC-Semicon-KRA105S-RTK-P

Part #	KEC-Semicon-KRA105S-RTK-P
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SEMICONDUCTOR

KRA101S~KRA106S

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

E

L

B

L

FEATURES

DIM MILLIMETERS

·

With Built-in Bias Resistors.

·

Simplify Circuit Design.

_

+

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

2

3

·

Reduce a Quantity of Parts and Manufacturing Process.

1

G

H

J

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

K

L

Q

P

P

EQUIVALENT CIRCUIT

BIAS RESISTOR VALUES

M

N

P

0.20 MIN

1.00+0.20/-0.10

7

TYPE NO.

KRA101S

KRA102S

KRA103S

KRA104S

KRA105S

KRA106S

R1(k

Ω

) R2(k

Ω

)

Q

0.1 MAX

OUT

4.7

10

4.7

10

22

47

47

47

M

R1(4.7 k

1. COMMON

(EMITTER)

2. IN

(BASE)

IN

22

R2

3. OUT

(COLLECTOR)

47

2.2

4.7

COMMON(+)

SOT-23

MAXIMUM RATING

(Ta=25

℃

)

CHARACTERISTIC

SYMBOL

V

O

RATING

-50

UNIT

V

Output Voltage

KRA101S

∼

106S

KRA101S

-20, 10

-30, 10

-40, 10

-40, 10

-12, 5

-20, 5

-100

KRA102S

KRA103S

V

I

Input Voltage

V

KRA104S

KRA105S

KRA106S

I

O

P

D

T

j

Output Current

mA

mW

℃

Power Dissipation

200

KRA101S

∼

106S

Junction Temperature

Storage Temperature Range

150

T

stg

-55

∼

150

℃

Marking

MARK SPEC

Lot No.

TYPE

KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S

PA PB PC PD PE

PF

MARK

Type Name

2008. 10. 29

Revision No : 4

1/6

KRA101S~KRA106S

ELECTRICAL CHARACTERISTICS

(Ta=25

℃

)

CHARACTERISTIC

SYMBOL

I

O(OFF)

TEST CONDITION

V

O

=-50V, V

I

=0

MIN.

TYP. MAX.

UNIT

nA

Output Cut-off Current

DC Current Gain

Output Voltage

–

30

50

70

80

80

80

–

–

55

-500

–

KRA101S

∼

106S

KRA101S

KRA102S

KRA103S

80

–

120

200

200

200

-0.1

-1.5

-1.8

-2.1

-2.8

-0.8

-0.9

-1.2

-0.65

200

–

–

G

I

V

O

=-5V, I

O

=-10mA

I

O

=-10mA, I

I

=-0.5mA

V

O

=-0.2V, I

O

=-5mA

KRA104S

KRA105S

–

–

KRA106S

–

V

O(ON)

-0.3

-2.0

-2.4

-3.0

-5.0

-1.1

-1.3

–

V

V

KRA101S

∼

106S

KRA101S

–

KRA102S

–

KRA103S

–

V

I(ON)

Input Voltage (ON)

KRA104S

–

KRA105S

–

KRA106S

–

-1.0

-0.5

–

KRA101S

∼

104S

KRA105S

∼

106S

KRA101S

∼

106S

KRA101S

V

I(OFF)

f

T

*

V

O

=-5V, I

O

=-0.1mA

V

O

=-10V, I

O

=-5mA

Input Votlage (OFF)

Transition Frequency

V

–

–

MHz

–

-1.8

-0.88

-0.36

-0.18

-3.6

-1.8

6.11

13

KRA102S

–

–

KRA103S

–

–

I

I

V

I

=-5V

Input Current

mA

KRA104S

–

–

KRA105S

–

–

KRA106S

–

–

KRA101S

3.29

7

4.7

10

KRA102S

KRA103S

15.4

32.9

1.54

3.29

0.8

17

8

22

28.6

61.1

2.86

6.11

1.2

26

Input Resistor

Resistor Ratio

R1

–

–

k

Ω

KRA104S

47

KRA105S

2.2

4.7

1.0

21

KRA106S

KRA101S~104S

KRA105S

R2/R1

KRA106S

10

12

Note : *Characteristic of Transistor Only

2008. 10. 29

Revision No : 4

2/6

KRA101S~KRA106S

ELECTRICAL CHARACTERISTICS

(Ta=25

℃

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

0.07

0.06

0.2

MAX.

UNIT

KRA101S

KRA102S

KRA103S

KRA104S

KRA105S

KRA106S

KRA101S

KRA102S

KRA103S

KRA104S

KRA105S

KRA106S

KRA101S

KRA102S

KRA103S

KRA104S

KRA105S

KRA106S

–

–

–

–

–

–

–

–

Rise

t

r

Time

0.24

–

–

–

0.02

0.07

1.1

–

–

–

–

–

–

–

–

–

–

–

–

–

–

1.1

1.1

–

–

–

–

–

–

–

–

–

–

–

V

O

=-5V

Storage

Time

Switching

Time

t

stg

V

IN

=-5V

μ

S

1.1

R

L

=1k

Ω

1.1

1.1

0.15

0.24

0.38

0.63

0.1

Fall

t

f

Time

0.2

2008. 10. 29

Revision No : 4

3/6

KRA101S~KRA106S

2008. 10. 29

Revision No : 4

4/6

KRA101S~KRA106S

2008. 10. 29

Revision No : 4

5/6

KRA101S~KRA106S

2008. 10. 29

Revision No : 4

6/6