KEC-Semicon-KRA114S-RTK-P
| Part # | KEC-Semicon-KRA114S-RTK-P |
Download  | KEC-Semicon-KRA114S-RTK-P |
SEMICONDUCTOR
KRA110S~KRA114S
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
_
+
A
B
C
D
E
2.93 0.20
·
With Built-in Bias Resistors.
·
Simplify Circuit Design.
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
·
Reduce a Quantity of Parts and Manufacturing Process.
1
G
H
J
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
Q
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
C
Q
0.1 MAX
M
1. EMITTER
2. BASE
R1
B
3. COLLECTOR
E
SOT-23
MAXIMUM RATING
(Ta=25
℃
)
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
UNIT
V
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-5
V
Collector Current
-100
200
mA
mW
℃
P
C
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
T
j
150
T
stg
-55
∼
150
℃
Marking
MARK SPEC
Lot No.
TYPE
KRA110S
PK
KRA111S
PM
KRA112S
PN
KRA113S
PO
KRA114S
PP
Type Name
MARK
2008. 10. 29
Revision No : 3
1/4
KRA110S~KRA114S
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=-50V, I
E
=0
MIN.
TYP.
–
MAX.
UNIT
nA
–
-100
I
EBO
V
EB
=-5V, I
C
=0
Emitter Cut-off Current
DC Current Gain
–
–
-100
nA
h
FE
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-10V, I
C
=-5mA
120
–
–
V
CE(sat)
f
T
*
Collector-Emitter Saturation Voltage
Transition Frequency
–
-0.1
250
4.7
10
-0.3
V
–
–
MHz
KRA110S
3.29
6.11
KRA111S
KRA112S
KRA113S
KRA114S
KRA110S
KRA111S
KRA112S
KRA113S
KRA114S
KRA110S
KRA111S
KRA112S
KRA113S
KRA114S
KRA110S
KRA111S
KRA112S
KRA113S
KRA114S
7
13
R
1
Input Resistor
70
100
22
130
k
Ω
15.4
28.6
32.9
47
61.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.065
0.4
0.1
0.15
2.0
1.7
3.0
2.0
1.5
0.3
0.3
1.7
0.8
1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Rise
t
r
Time
V
O
=-5V
V
IN
=-5V
R
L
=1k
Ω
Storage
Time
Switching
Time
t
stg
μ
S
Fall
t
f
Time
Note : * Characteristic of Transistor Only.
2008. 10. 29
Revision No : 3
2/4
KRA110S~KRA114S
h
FE
–
I
C
V
CE(sat)
– I
C
KRA110S
KRA110S
-2
-1
2k
1k
I
/I =20
B
C
500
300
-0.5
-0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
-0.1
Ta=100 C
-0.05
50
30
-0.03
Ta=25 C
Ta=-25 C
V
CE
=-5V
10
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
h
FE
–
I
C
V
CE(sat)
– I
C
KRA111S
KRA111S
2k
1k
-2
-1
I
/I =20
B
C
500
300
-0.5
-0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
-0.1
Ta=100 C
-0.05
-0.03
50
30
Ta=25 C
Ta=-25 C
V
CE
=-5V
10
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
h
FE
–
I
C
V
CE(sat)
– I
C
KRA112S
KRA112S
2k
1k
-2
-1
I
/I =20
B
C
500
300
-0.5
-0.3
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1
100
Ta=100 C
50
30
-0.05
-0.03
Ta=25 C
Ta=-25 C
V
CE
=-5V
-30
-0.01
10
-0.1
-0.3
-1
-3
-10
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
2008. 10. 29
Revision No : 3
3/4
KRA110S~KRA114S
h
FE
–
I
C
V
CE(sat)
–
I
C
KRA113S
KRA113S
2k
1k
-2
-1
I
/I =20
B
C
500
300
-0.5
-0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
-0.1
Ta=100 C
50
30
-0.05
-0.03
Ta=25 C
Ta=-25 C
V
CE
=-5V
-30
10
-0.1
-0.01
-0.3
-1
-3
-10
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
h
FE
–
I
C
V
CE(sat)
–
I
C
KRA114S
KRA114S
2k
1k
-2
-1
I
/I =20
B
C
500
300
-0.5
-0.3
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1
100
Ta=100 C
-0.05
-0.03
50
30
Ta=25 C
Ta=-25 C
V
CE
=-5V
-30
10
-0.1
-0.01
-0.3
-1
-3
-10
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
2008. 10. 29
Revision No : 3
4/4
