KEC-Semicon-KTA2014-Y-RTK-P
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SEMICONDUCTOR
KTA2014
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES
M
B
M
DIM MILLIMETERS
·
Excellent h
FE
Linearity
_
+
A
B
C
D
E
2.00 0.20
D
2
1
_
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
·
Low Noise : NF=1dB(Typ.), 10dB(Max.).
·
Complementary to KTC4075.
·
Small Package.
1.25
+
0
.15
_
+
0.90 0.10
3
0.3+0.10/-0.05
_
+
2.10 0.20
G
H
J
0.65
0.15+0.1/-0.06
1.30
P
K
L
0.00~0.10
0.70
H
_
+
M
N
P
0.42 0.10
0.10 MIN
0.1 MAX
N
N
K
MAXIMUM RATING
(Ta=25
℃
)
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
RATING
-50
UNIT
V
1. EMITTER
2. BASE
V
CBO
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
3. COLLECTOR
-5
V
-150
-30
mA
mA
mW
℃
USM
I
B
Base Current
P
C
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
100
T
j
150
Marking
T
stg
-55
∼
150
℃
Lot No.
h
Rank
FE
Type Name
S
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
I
CBO
TEST CONDITION
MIN.
TYP.
MAX.
-0.1
-0.1
400
-0.3
–
UNIT
V
CB
=-50V, I
E
=0
–
–
–
μ
A
μ
A
I
EBO
V
EB
=-5V, I
C
=0
Emitter Cut-off Current
DC Current Gain
–
–
h
FE
(Note)
V
CE(sat)
f
T
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
Ω
70
–
Collector-Emitter Saturation
Voltage
Transition Frequency
-0.1
–
V
MHz
pF
80
–
C
ob
Collector Output Capacitance
4
7
Noise Figure
NF
–
1.0
10
dB
Note : h
FE
Classification O(2):70
∼
140, Y(4):120
∼
240, GR(6):200
∼
400
2008. 8. 29
Revision No : 3
1/3
KTA2014
2008. 8. 29
Revision No : 3
2/3
KTA2014
2008. 8. 29
Revision No : 3
3/3
