KEC-Semicon-KTC4370A-Y-U-PF
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SEMICONDUCTOR
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTA1659/A.
_
10.
0
+
0
.3
A
_
15.
0
+
0
.3
B
C
E
_
2.70 0.3
+
D
E
F
0.76+0.09/-0.05
_
Φ
3.2 0.2
+
_
3.0+0.3
_
12.0 0.3
+
G
H
0.5+0.1/-0.05
_
13.6 0.5
+
J
K
L
L
MAXIMUM RATING
(Ta=25
CHARACTERISTIC
)
R
_
3.7 0.2
+
L
1.2+0.25/-0.1
1.5+0.25/-0.1
SYMBOL
V
CBO
RATING
160
UNIT
V
M
M
N
P
D
D
_
2.5
4
+
0
.1
KTC4370
KTC4370A
KTC4370
KTC4370A
Collector-Base
Voltage
_
6.8 0.1
+
_
+
4.5 0.2
Q
R
180
_
2.
6
+
0.2
N
N
H
S
0.5 Typ
160
Collector-Emitter
Voltage
V
CEO
V
180
1. BASE
V
EBO
I
C
Emitter-Base Voltage
Collector Current
Base Current
5
V
A
3
2
1
2. COLLECTOR
3. EMITTER
1.5
I
B
0.15
20
A
TO-220IS
P
C
W
Collector Power Dissipation
(Tc=25
Junction Temperature
)
T
j
150
T
stg
Storage Temperature Range
-55 150
ELECTRICAL CHARACTERISTICS
(Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=160V, I
E
=0
MIN.
TYP.
MAX.
UNIT
–
–
1.0
1.0
–
A
A
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut-off Current
–
160
180
70
–
–
KTC4370
–
–
Collector-Emitter
V
(BR)CEO
I
C
=10mA, I
B
=0
V
Breakdown Voltage
KTC4370A
–
h
FE
(Note)
V
CE(sat)
V
BE
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
DC Current Gain
–
240
1.5
1.0
–
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
–
V
V
–
–
f
T
Transition Frequency
–
100
25
MHz
pF
C
ob
Collector Output Capacitance
–
–
Note : h
FE
Classification
O:70~140,
Y:120~240
2007. 5. 22
Revision No : 2
1/3
KTC4370/A
h
FE
– I
C
I
C
– V
CE
500
300
2.0
1.6
1.2
0.8
0.4
0
COMMON EMITTER
Ta=25 C
COMMON EMITTER
Ta=25 C
250
80
30
140
100
V
=2V
12
50
30
5
3
2
10
5
1
I
=0mA
B
3
10
30
100
300
1K 2K
20
0
4
8
12
16
COLLECTOR CURRENT I
(mA)
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
–
I
C
h
FE
– I
C
1.0
500
300
COMMON EMITTER
Ta=25 C
0.5
0.3
Ta=0 C
100
50
30
V
=10V
=5V
CE
V
0.1
CE
COMMON EMITTER
Tc=25 C
0.05
0.03
10
5
5
10
30
100
300
1K
3K
3
10
30
100
300
1K 2K
COLLECTOR CURRENT I
(mA)
C
COLLECTOR CURRENT I
(mA)
C
V
CE(sat)
–
I
C
I
C
– V
BE
5.0
3.0
1.6K
1.4K
COMMON EMITTER
=5V
COMMON EMITTER
/I =10
V
I
CE
C
B
1.2K
1K
1.0
0.5
0.3
800
600
400
0.1
200
0
0.05
5
10
30
100
300
1K
3K
0
0.2
0.4
0.6
0.8
1.0
BE
1.2
(V)
1.4
COLLECTOR CURRENT I
(mA)
C
BASE-EMITTER VOLTAGE V
2007. 5. 22
Revision No : 2
2/3
KTC4370/A
C
ob
– V
CB
SAFE OPERATING AREA
100
5
3
SINGLE
NONREPETITIVE
PULSE Tc=25
C
I
=0
I
I
MAX(PULSED)
*
E
C
C
*
f=1MHz
Tc=25 C
50
30
MAX
1
*
*
(CONTINUOUS)
0.5
0.3
10
5
3
S/B LIMI
0.1
TE
D
CURVES MUST BE
DERATED LINEARLY WITH
0.05
0.03
INCREASE IN TEMPERATURE
MAX=160V
1
V
0.5
1
3
5
10
30 50 100
200
CEO
KTC4370
V
MAX=180V
COLLECTOR-BASE VOLTAGE V
(V)
CEO
KTC4370A
CB
0.01
3
5
10
30 50
100
300
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
f
T
– I
C
Pc –
Ta
500
300
25
20
1
Tc=Ta
INFINITE HEAT SINK
NO HEAT SINK
COMMON EMITTER
Tc=25 C
1
2
15
10
5
100
50
30
2
0
10
0
20
40
60
80 100
120 140 160
2
5
10
30 50
100
300 500
COLLECTOR CURRENT I
(mA)
C
AMBIENT TEMPERATURE Ta (
C)
2007. 5. 22
Revision No : 2
3/3
