KEC-Semicon-KTC8050S-D-RTK-P

SEMICONDUCTOR  

KTC8050S  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

HIGH CURRENT APPLICATION.  

FEATURE  

E

L

B

L

·

Complementary to KTC8550S.  

DIM MILLIMETERS  

_

+

A

B

C

D

E

2.93 0.20  

1.30+0.20/-0.15  

1.30 MAX  

0.40+0.15/-0.05  

2.40+0.30/-0.20  

1.90  

2

3

1

MAXIMUM RATING

 

(Ta=25

℃

)  

CHARACTERISTIC  

G

H

J

0.95  

0.13+0.10/-0.05  

0.00 ~ 0.10  

0.55  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

35  

UNIT  

V

K

L

Q

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

P

P

M

N

P

0.20 MIN  

1.00+0.20/-0.10  

7

30  

V

Q

0.1 MAX  

5

V

M

Collector Current  

800  

mA  

mA  

mW  

℃

1. EMITTER  

2. BASE  

I

E  

Emitter Current  

-800  

350  

3. COLLECTOR  

P

C

*  

T

j  

Collector Power Dissipation  

Junction Temperature  

150  

T

stg  

Storage Temperature Range  

-55

∼

150  

℃

SOT-23  

* P

C

: Package Mounted On 99.5% Alumina (10

×

8

×

0.6

㎜

)  

Marking  

h

Rank  

FE  

Lot No.  

Type Name  

BK  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

℃

)  

CHARACTERISTIC  

Collector Cut-off Current  

SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

MAX.  

UNIT  

nA  

V

V

CB

=15V, I

E

=0  

–

35  

30  

100  

60  

–

–

50  

–

V

(BR)CBO  

V

(BR)CEO  

h

FE

(1) (Note)  

h

FE

(2)  

I

C

=0.5mA, I

E

=0  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

–

I

C

=1mA, I

B

=0  

–

–

–

V

V

CE

=1V, I

C

=50mA  

V

CE

=1V, I

C

=350mA  

I

C

=500mA, I

B

=20mA  

V

CE

=1V, I

C

=500mA  

V

CE

=5V, I

C

=10mA  

V

CB

=10V, f=1MHz, I

E

=0  

300  

–

DC Current Gain  

–

V

CE(sat)  

V

BE  

Collector-Emitter Saturation Voltage  

Base-Emitter Voltage  

–

0.5  

1.2  

–

V

V

–

–

f

T  

Transition Frequency  

–

120  

13  

MHz  

pF  

C

ob  

Collector Output Capacitance  

–

–

Note : h

FE

(1) Classification

 

C : 100

∼

200, D

 

: 150

∼

300  

2003. 3. 25  

Revision No : 1  

1/2  

KTC8050S  

I

C

– V

CE  

h

FE

–

I

C  

1k  

800  

600  

400  

200  

0

1k  

COMMON EMITTER  

=1V  

COMMON EMITTER  

Ta=25 C  

V

500  

300  

CE  

8

7

Ta=100 C  

Ta=25 C  

6

5

4

3

100  

Ta=-25 C  

50  

30  

2

I

=1mA  

B

0

10  

0

1

2

3

4

5

6

1

3

10  

30  

100  

300  

1k  

COLLECTOR-EMITTER VOLTAGE V  

(V)  

COLLECTOR CURRENT I

 

(mA)  

C

CE  

V

CE(sat)

– I

C  

I

C

– V

BE  

1

1k  

COMMON EMITTER  

=1V  

COMMON EMITTER  

500  

300  

V

CE  

I

/I =25  

B

C

0.5  

0.3  

100  

50  

30  

0.1  

25 C  

-25 C  

Ta=-25 C  

0.05  

0.03  

10  

Ta=25 C  

Ta=100 C  

5

3

0.01  

1

0

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1

3

10  

30  

100  

300  

1k  

COLLECTOR CURRENT I

 

(mA)  

C

BASE-EMITTER VOLTAGE V  

(V)  

BE  

Pc –

 

Ta  

500  

400  

300  

MOUNTED ON 99.5%  

ALUMINA 10

x

8

x

0.6mm  

Ta=25 C  

1

2

1

2

200  

100  

0

0

25  

50  

75  

100  

125  

150  

175  

AMBIENT TEMPERATURE Ta

 

( C)  

2003. 3. 25  

Revision No : 1  

2/2