KEC-Semicon-KTC8550S-D-RTK-P

SEMICONDUCTOR  

KTC8550S  

EPITAXIAL PLANAR PNP TRANSISTOR  

TECHNICAL DATA  

HIGH CURRENT APPLICATION.  

FEATURE  

E

L

B

L

·

Complementary to KTC8050S.  

DIM MILLIMETERS  

_

+

A

B

C

D

E

2.93 0.20  

1.30+0.20/-0.15  

1.30 MAX  

0.40+0.15/-0.05  

2.40+0.30/-0.20  

1.90  

2

3

1

MAXIMUM RATING

 

(Ta=25

℃

)  

CHARACTERISTIC  

G

H

J

0.95  

0.13+0.10/-0.05  

0.00 ~ 0.10  

0.55  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

-35  

UNIT  

V

K

L

Q

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

P

P

M

N

P

0.20 MIN  

1.00+0.20/-0.10  

7

-30  

V

Q

0.1 MAX  

-5  

V

M

Collector Current  

-800  

800  

mA  

mA  

mW  

℃

1. EMITTER  

2. BASE  

I

E  

Emitter Current  

3. COLLECTOR  

P

C

*  

T

j  

Collector Power Dissipation  

Junction Temperature  

350  

150  

T

stg  

Storage Temperature Range  

-55

∼

150  

℃

SOT-23  

* P

C

: Package Mounted On 99.5% Alumina (10

×

8

×

0.6

㎜

)  

Marking  

h

Rank  

FE  

Lot No.  

Type Name  

BL  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

℃

)  

CHARACTERISTIC  

Collector Cut-off Current  

SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

MAX.  

UNIT  

nA  

V

V

CB

=-15V, I

E

=0  

–

-35  

-30  

100  

60  

–

–

-50  

V

(BR)CBO  

V

(BR)CEO  

h

FE

(1) (Note)  

h

FE

(2)  

I

C

=-0.5mA, I

E

=0  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

–

–

I

C

=-1mA, I

B

=0  

–

–

–

300  

–

V

V

CE

=-1V, I

C

=-50mA  

V

CE

=-1V, I

C

=-350mA  

I

C

=-500mA, I

B

=-50mA  

V

CE

=-1V, I

C

=-500mA  

V

CE

=-5V, I

C

=-10mA  

V

CB

=-10V, f=1MHz, I

E

=0  

DC Current Gain  

–

V

CE(sat)  

V

BE  

Collector-Emitter Saturation Voltage  

Base-Emitter Voltage  

–

-0.5  

-1.2  

–

V

V

–

–

f

T  

Transition Frequency  

–

120  

19  

MHz  

pF  

C

ob  

Collector Output Capacitance  

–

–

Note : h

FE

(1) Classification

 

C : 100

∼

200, D

 

: 150

∼

300  

2003. 3. 25  

Revision No : 1  

1/2  

KTC8550S  

I

C

– V

CE  

h

FE

–

I

C  

-1k  

-800  

-600  

-400  

-200  

2k  

1k  

COMMON EMITTER  

=-1V  

COMMON EMITTER  

Ta=25 C  

V

CE  

-8  

-7  

-6  

-5  

500  

300  

Ta=100 C  

-4  

Ta=25 C  

Ta=-25 C  

100  

-3  

-2  

50  

30  

I

=-1mA  

B

0

10  

0

0

-1  

-2  

-3  

-4  

-5  

-6  

-1  

-3  

-10  

-30  

-100  

-300  

-1k  

COLLECTOR-EMITTER VOLTAGE V

 

(V)  

CE  

COLLECTOR CURRENT I

 

(mA)  

C

V

CE(sat)

–

I

C  

I

C

– V

BE  

-1k  

-3  

-1  

COMMON  

EMITTER  

=-1V  

COMMON EMITTER  

-500  

-300  

I

/I =25  

B

C

V

CE  

-0.5  

-0.3  

-100  

-50  

-30  

-0.1  

-10  

Ta=100 C  

-0.05  

-0.03  

-5  

-3  

Ta=25 C  

Ta=-25 C  

-0.01  

-1  

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

(V)  

-1  

-3  

-10  

-30  

-100  

-300  

-1k  

BASE-EMITTER VOLTAGE V  

COLLECTOR CURRENT I

 

(mA)  

C

BE  

Pc –

 

Ta  

500  

400  

300  

MOUNTED ON 99.5%  

1

2

ALUMINA 10  

x

8

x

0.6mm  

Ta=25 C  

1

2

200  

100  

0

0

25  

50  

75  

100  

125  

150  

175  

AMBIENT TEMPERATURE Ta

 

( C)  

2003. 3. 25  

Revision No : 1  

2/2