KEC-Semicon-KTD1302-AT-P

SEMICONDUCTOR  

KTD1302  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

AUDIO MUTING APPLICATION.  

B

C

FEATURES  

ᴌ

High Emitter-Base Voltage : V

EBO

=12V(Min.).  

ᴌ

High Reverse h

FE  

: Reverse h

FE

=20(Min.) (V

CE

=2V, I

C

=4mA).  

ᴌ

Low on Resistance :R

ON

=0.6

ή

(Typ.) (I

B

=1mA).  

DIM MILLIMETERS  

N

A

B

C

D

E

4.70 MAX  

4.80 MAX  

3.70 MAX  

0.45  

E

K

D

G

1.00  

F

1.27  

G

H

J

K

L

0.85  

MAXIMUM RATING

 

(Ta=25

ᴱ

)  

0.45  

_

H

14.00 +0.50  

CHARACTERISTIC  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

25  

UNIT  

V

0.55 MAX  

2.30  

0.45 MAX  

1.00  

F

F

M

N

20  

V

3

1

2

12  

V

1. EMITTER  

2. COLLECTOR  

3. BASE  

300  

mA  

mA  

mW  

ᴱ

I

B  

Base Current  

30  

P

C  

Collector Power Dissipation  

Junction Temperature  

Storage Temperature Range  

625  

TO-92  

T

j  

150  

T

stg  

-55

ᴕ

150  

ᴱ

ELECTRICAL CHARACTERISTICS

 

(Ta=25

ᴱ

)  

CHARACTERISTIC SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

MAX.  

UNIT  

Ọ

A  

V

CB

=25V, I

E

=0  

Collector Cut-off Current  

I

EBO  

–

–

–

0.1  

0.1  

800  

–

V

EB

=12V, I

C

=0  

Emitter Cut-off Current  

DC Current Gain  

–

Ọ

A  

h

FE

(1) (FOR)  

h

FE

(2) (REV)  

V

CE(sat)  

V

BE(sat)  

f

T  

V

CE

=2V, I

C

=4mA  

V

CE

=2V, I

C

=4mA  

I

C

=100mA, I

B

=10mA  

I

C

=100mA, I

B

=10mA  

V

CE

=10V, I

C

=1mA  

V

CB

=10V, I

E

=0, f=1MHz  

200  

–

20  

–

–

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

Transition Frequency  

–

0.25  

1.0  

–

V

V

–

–

–

60  

10  

0.6  

MHz  

pF  

C

ob  

Collector Output Capacitance  

On Resistance  

–

–

R

on  

f=1KHz, I

B

=1mA, V

IN

=0.3V  

–

–

ή

1995. 10. 17  

Revision No : 0  

1/2  

KTD1302  

V

CE(sat)

– I

 

C  

C

ob

– V

CB  

1

24  

20  

16  

12  

8

I

=0  

I

/I =25  

B

E

C

Ta=25 C  

f=1MHz  

0.5  

0.3  

Ta=25 C  

0.1  

0.05  

0.03  

Ta=75 C  

Ta=-25 C  

0.1  

4

0.01  

0

0.01  

0.03  

0.3  

1

1

3

5

10  

30 50  

100  

COLLECTOR CURRENT I

 

(A)  

C

COLLECTOR-BASE VOLTAGE V  

(V)  

CB  

h

FE

–

I

C  

R

on

– I

B  

1k  

300  

100  

30  

1.2k  

1k  

V

=2V  

CE  

I

=1mA  

B

~

Vh  

V

A

V

800  

600  

400  

200  

0

f=1kHz  

V=0.3V  

10  

3

1

0.3  

0.1  

0.001  

0.003  

0.01  

0.03  

0.1  

0.3  

1

0.01  

0.03  

0.1  

0.3  

1

3

10  

COLLECTOR CURRENT I

 

(A)  

C

BASE CURRENT I

 

(mA)  

B

1995. 10. 17  

Revision No : 0  

2/2