KEC-Semicon-KTD2854-AT-P

SEMICONDUCTOR  

KTD2854  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.  

SWITCHING APPLICATIONS.  

B

D

POWER AMPLIFIER APPLICATION.  

FEATURES  

ᴌ

High DC Current Gain  

DIM MILLIMETERS  

P

DEPTH:0.2  

A

B

C

D

7.20 MAX  

5.20 MAX  

0.60 MAX  

: h

FE

=2000(Min.) (V

CE

=2V, I

C

=1A)  

ᴌ

Low Saturation Voltage  

: V

CE(sat)

=1.5V(Max.) (I

C

=1A, I

B

=1mA)  

ᴌ

Complementary to KTB2234.  

C

Q

S

2.50 MAX  

E

F

1.15 MAX  

1.27  

K

G

H

J

1.70 MAX  

0.55 MAX  

14.00

+

0

.50  

F

F

_

K

L

M

0.35 MIN  

H

H

H

_

0.75

+

0

.10  

E

4

25  

1.25  

Φ

1.50  

0.10 MAX  

M

M

N

O

P

Q

R

S

MAXIMUM RATINGS

 

(Ta=25

ᴱ

)  

L

1

2

3

H

CHARACTERISTIC  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

UNIT  

V

N

N

_

12.5

0

+

0

.50  

1. EMITTER  

2. COLLECTOR  

3. BASE  

1.00  

100  

100  

V

8

V

TO-92L  

DC  

Pulse  

2

Collector Current  

A

I

CP  

3

0.5  

I

B  

Base Current  

A

EQUIVALENT CIRCUIT  

P

C  

Collector Power Dissipation  

Junction Temperature  

1

W

ᴱ

ᴱ

COLLECTOR  

T

j  

150  

T

stg  

Storage Temperature Range  

-55

ᴕ

150  

BASE  

∼

∼

4k

Ω

 

−

800

Ω  

−

EMITTER  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

ᴱ

)  

CHARACTERISTIC  

Collector Cut-off Current  

SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

MAX.  

UNIT  

V

CB

=80V, I

E

=0  

–

–

10  

4

Ọ

A  

mA  

V

I

EBO  

V

EB

=8V, I

C

=0  

Emitter Cut-off Current  

–

–

–

V

(BR)CEO  

h

FE  

I

C

=10mA, I

B

=0  

Collector-Emitter Breakdown Voltage  

DC Current Gain  

100  

–

V

CE

=2V, I

C

=1A(Pulse)  

I

C

=1A, I

B

=1mA(Pulse)  

I

C

=1A, I

B

=1mA(Pulse)  

V

CE

=2V, I

C

=0.5A  

V

CB

=10V, I

E

=0, f=1MHz  

2000  

–

–

V

CE(sat)  

V

BE(sat)  

f

T  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

Transition Frequency  

–

–

–

–

–

1.5  

2.0  

–

V

V

–

100  

20  

MHz  

pF  

C

ob  

Collector Output Capacitance  

–

OUTPUT  

t

on  

t

stg  

t

f  

Turn On Time  

–

–

–

0.4  

4.0  

0.6  

–

–

–

20

µ

s  

I

I

B1  

INPUT  

Switching  

Storage Time  

Time  

I

B1  

I

Ọ

S  

B2  

I

B2  

=-I =1mA  

B2  

DUTY CYCLE

 

1%  

B1  

Fall Time  

V

=30V  

CC  

<

=

2001. 10. 23  

Revision No : 0  

1/3  

KTD2854  

h

FE

– I

 

C  

I

C

– V

CE  

4

3

2

1

10K  

3K  

3mA  

1mA  

2mA  

1K  

300  

100  

COMMON EMITTER  

Ta=25 C  

30  

10  

COMMON EMITTER  

=2V  

V

CE  

0

0

1

2

3

4

5

10m  

30m 100m  

300m  

1

3

10  

COLLECTOR-EMITTER VOLTAGE V  

(V)  

COLLECTOR CURRENT I

 

(A)  

C

CE  

V

CE(sat)

– I

 

C  

V

BE(sat)

–

I

C  

5

3

3

COMMON EMITTER  

COMMON EMITTER  

I

C

/I =1000  

B

I

C

/I =1000  

B

Ta=-55 C  

1

=25 C  

a

00  

T

C

Ta=1  

0.5  

1

0.2  

0.3  

0.5  

1

3

5

200m 300m 500m  

1

3

5

COLLECTOR CURRENT I

 

(A)  

C

COLLECTOR CURRENT I

 

(A)  

C

I

C

– V

BE  

Pc –

 

Ta  

1200  

1000  

800  

600  

400  

200  

0

3

2

1

0

COMMON EMITTER  

=2V  

V

CE  

0

0.8  

1.6  

2.4  

3.2  

0

40  

80  

120  

160  

200  

BASE-EMITTER VOLTAGE V  

(V)  

AMBIENT TEMPERATURE Ta

 

( C)  

BE  

2001. 10. 23  

Revision No : 0  

2/3  

KTD2854  

SAFE OPERATING AREA  

5

3

I

MAX(PULSED)  

C

10ms  

1

0.5  

0.3  

SINGLE NONREPETITIVE  

PULSE Tc=25

 

C  

0.1  

CURVES MUST BE DERATED  

LINEARLY WITH INCREASE  

IN TEMPERATURE  

0.05  

0.03  

0.3  

1

3

10  

30  

100 200  

(V)  

COLLECTOR-EMITTER VOLTAGE V  

CE  

2001. 10. 23  

Revision No : 0  

3/3  

This datasheet has been download from:  

Datasheets for electronics components.