KEC-Semicon-KTN2222AS-RTK-PS
| Part # | KEC-Semicon-KTN2222AS-RTK-PS |
Download  | KEC-Semicon-KTN2222AS-RTK-PS |
SEMICONDUCTOR
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
_
+
2.93 0.20
A
B
C
D
E
·
Low Leakage Current
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
: I
CEX
=10nA(Max.) ; V
CE
=60V, V
EB(OFF)
=3V.
·
Low Saturation Voltage
2
3
1
G
H
J
: V
CE(sat)
=0.3V(Max.) ; I
C
=150mA, I
B
=15mA.
·
Complementary to the KTN2907S/2907AS.
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
Q
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
Q
0.1 MAX
M
MAXIMUM RATING
(Ta=25
℃
)
1. EMITTER
2. BASE
RATING
CHARACTERISTIC
SYMBOL
UNIT
3. COLLECTOR
KTN2222S KTN2222AS
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
30
5
75
40
6
V
V
SOT-23
V
Collector Current
600
350
mA
Collector Power Dissipation
(Ta=25
℃
)
P
C
mW
T
j
Junction Temperature
150
℃
℃
T
stg
Storage Temperature Range
-55
∼
150
Note : P
C
* : Package Mounted on 99.5% alumina 10
×
8
×
0.6mm.
Marking
Lot No.
Lot No.
Type Name
Type Name
ZB
ZG
MARK SPEC
TYPE
MARK
KTN2222S
KTN2222AS
Z B
Z G
1999. 5. 4
Revision No : 2
1/5
KTN2222S/AS
℃
)
ELECTRICAL CHARACTERISTICS
(Ta=25
CHARACTERISTIC
SYMBOL
I
CEX
TEST CONDITION
V
CE
=60V, V
EB(OFF)
=3V
V
CB
=50V, I
E
=0
MIN.
TYP. MAX. UNIT
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
KTN2222AS
KTN2222S
KTN2222AS
KTN2222AS
KTN2222S
–
–
–
–
–
–
–
–
10
0.01
0.01
10
nA
μ
A
nA
I
CBO
I
EBO
V
CB
=60V, I
E
=0
V
EB
=3V, I
C
=0
60
75
30
–
–
–
–
–
–
Collector-Base
V
(BR)CBO
I
C
=10
μ
A, I
E
=0
V
Breakdown Voltage
KTN2222AS
KTN2222S
Collector-Emitter
*
V
(BR)CEO
I
C
=10mA, I
B
=0
V
V
Breakdown Voltage
KTN2222AS
40
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
KTN2222S
Emitter-Base
V
(BR)EBO
I
E
=10
μ
A, I
C
=0
Breakdown Voltage
KTN2222AS
6
–
h
FE
(1)
h
FE
(2)
h
FE
(3)
h
FE
(4)
I
C
=0.1mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=150mA, V
CE
=10V
35
50
75
100
30
40
–
–
–
KTN2222S
KTN2222AS
–
DC Current Gain
*
300
–
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
h
FE
(5)
I
C
=500mA, V
CE
=10V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
–
0.4
0.3
1.6
1
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
1
2
1
2
–
Collector-Emitter
Saturation Voltage
*
*
V
V
–
–
–
1.3
1.2
2.6
2.0
–
0.6
–
Base-Emitter
Saturation Voltage
–
250
300
–
V
CE
=20V, I
C
=20mA,
f=100MHz
f
T
Transition Frequency
Collector Output Capacitance
Input Capacitance
MHz
pF
–
C
ob
C
ib
V
CB
=10V, I
E
=0, f=1.0MHz
8
KTN2222S
–
30
25
V
EB
=0.5V, I
C
=0, f=1.0MHz
pF
KTN2222AS
–
* Pulse Test : Pulse Width
≦
300
μ
S, Duty
Cycle
≦
2%.
1999. 5. 4
Revision No : 2
2/5
KTN2222S/AS
℃
)
ELECTRICAL CHARACTERISTICS
(Ta=25
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
C
=1mA, V
CE
=10V, f=1kHz
I
C
=10mA, V
CE
=10V, f=1kHz
I
C
=1mA, V
CE
=10V, f=1kHz
I
C
=10mA, V
CE
=10V, f=1kHz
I
C
=1mA, V
CE
=10V, f=1kHz
I
C
=10mA, V
CE
=10V, f=1kHz
I
C
=1mA, V
CE
=10V, f=1kHz
I
C
=10mA, V
CE
=10V, f=1kHz
I
E
=20mA, V
CB
=20V, f=31.8MHz
MIN.
TYP. MAX. UNIT
2
0.25
–
–
–
–
–
–
–
–
–
–
8
1.25
8
h
ie
h
re
h
fe
h
oe
Input Impedance
KTN2222AS
KTN2222AS
KTN2222AS
KTN2222AS
k
Ω
Voltage Feedback Ratio
Small-Singal Current Gain
Collector Output Admittance
x10
-4
–
4
50
75
5
300
375
35
Ω
μ
25
–
200
150
Collector-Base Time Constant
Noise Figure
KTN2222AS
KTN2222AS
C
c
·
rbb’
pS
I
C
=100
μ
A, V
CE
=10V,
Rg=1k
Ω
, f=1kHz
NF
–
–
4
dB
t
d
t
r
Delay Time
Rise Time
–
–
–
–
–
–
–
–
10
25
V
CC
=30V, V
BE(OFF)
=0.5V
I
C
=150mA, I
B1
=15mA
Switching Time
nS
t
stg
t
f
Storage Time
Fall Time
225
60
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
=15mA
1999. 5. 4
Revision No : 2
3/5
KTN2222S/AS
I
C
– V
CE
h
FE
– I
C
1000
800
1K
V
=10V
CE
COMMON EMITTER
Ta=25 C
500
300
16mA
14mA
12mA
10mA
8mA
20mA
18mA
Ta=75 C
Ta=25 C
Ta=-25 C
600
400
200
V
CE
=1V
6mA
4mA
100
V
=2V
CE
I
=2mA
B
50
30
10
0
0.4
0.8
1.2
1.6
1.8
0.5
1
3
10
30
100
300
1K
COLLECTOR CURRENT I
(mA)
C
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
V
CE(sat)
–
I
C
V
BE(sat)
–
I
C
1.6
0.6
0.4
0.2
0
COMMON EMITTER
/I =10
COMMON EMITTER
I
I
/I =10
B
C
C
B
1.4
1.2
Ta=25 C
V
BE(sat)
1.0
0.8
0.6
0.4
0.2
Ta=-25 C
Ta=25 C
Ta=75 C
V
CE(sat)
0
0.5
1
3
10
30
100
300
(mA)
1k
0.5
1
3
10
30
100
300
1k
COLLECTOR CURRENT I
COLLECTOR CURRENT I
(mA)
C
C
I
C
– V
BE
f
T
–
I
C
1000
300
500
300
COMMON EMITTER
=10V
Ta=25 C
=10V
V
CE
V
CE
100
30
Ta=75 C
100
30
10
3
Ta=-25 C
1
0.3
10
1
3
10
30
100
300
C
1k
(mA)
3k
0.1
COLLECTOR CURRENT I
0.05
1.0
0.9
(V)
0.3
0.4 0.5
0.2
0.6 0.7
0.8
BASE-EMITTER VOLTAGE
V
BE
1999. 5. 4
Revision No : 2
4/5
KTN2222S/AS
Cob –
V
CB
Cib –
V
EB
Pc – Ta
100
30
500
400
300
200
100
0
(1) MOUNTED ON
COMMON EMITTER
f=1MHz,
99.5% ALUMINA
10
x
8
x
0.6mm
(2) Ta=25
C
Ta=25 C
(1)
(2)
Cib
10
3.0
1.0
Cob
0.1
1.0
10
100
(V)
300
0
25
50
75
100
125
150
175
COLLECTOR-BASE VOLTAGE V
EMITTER-BASE VOLTAGE V
AMBIENT TEMPERATURE Ta
( C)
CB
(V)
EB
1999. 5. 4
Revision No : 2
5/5
