KEC-Semicon-MPS8550-D-AT-PC

SEMICONDUCTOR  

MPS8550  

EPITAXIAL PLANAR PNP TRANSISTOR  

TECHNICAL DATA  

HIGH CURRENT APPLICATION.  

B

C

FEATURE  

ᴌ

Complementary to MPS8050.  

DIM MILLIMETERS  

N

A

B

C

D

E

4.70 MAX  

4.80 MAX  

3.70 MAX  

0.45  

1.00  

1.27  

E

K

D

G

MAXIMUM RATING

 

(Ta=25

ᴱ

)  

CHARACTERISTIC  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

-40  

UNIT  

V

F

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

G

H

J

K

L

0.85  

0.45  

-25  

V

_

H

14.00 +0.50  

0.55 MAX  

2.30  

0.45 MAX  

1.00  

F

F

-6  

V

M

N

Collector Current  

-1.5  

A

3

1

2

P

C  

Collector Power Dissipation  

Junction Temperature  

625  

mW  

ᴱ

1. EMITTER  

2. BASE  

3. COLLECTOR  

T

j  

150  

T

stg  

Storage Temperature Range  

-55

ᴕ

150  

ᴱ

TO-92  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

ᴱ

)  

CHARACTERISTIC SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

–

MAX. UNIT  

V

CB

=-35V, I

E

=0  

Collector Cut-off Current  

I

EBO  

V

(BR)CBO  

–

–

-100  

nA  

nA  

V

V

EB

=-6V, I

C

=0  

Emitter Cut-off Current  

–

-100  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

I

C

=-100

Ọ

A, I

E

=0  

-40  

-25  

45  

85  

40  

–

–

–

V

(BR)CEO  

h

FE

(1)  

h

FE

(2) (Note)  

h

FE

(3)  

V

CE(sat)  

V

BE(sat)  

V

BE  

I

C

=-2mA, I

B

=0  

–

–

–

V

V

CE

=-1V, I

C

=-5mA  

V

CE

=-1V, I

C

=-100mA  

V

CE

=-1V, I

C

=-800mA  

I

C

=-800mA, I

B

=-80mA  

I

C

=-800mA, I

B

=-80mA  

V

CE

=-1V, I

C

=-10mA  

V

CE

=-10V, I

C

=-50mA  

V

CB

=-10V, f=1MHz, I

E

=0  

170  

160  

80  

DC Current Gain  

300  

–

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

Base-Emitter Voltage  

-0.28  

-0.98  

-0.66  

200  

15  

-0.5  

-1.2  

-1.0  

–

V

V

–

–

V

f

T  

Transition Frequency  

100  

–

MHz  

pF  

C

ob  

Collector Output Capacitance  

–

Note : h

FE

(2) Classification

 

B:85

ᴕ

160 , C

 

: 120

ᴕ

200 , D

 

: 160

ᴕ

300  

1999. 10. 25  

Revision No : 1  

1/2  

MPS8550  

I

C

– V

CE  

h

FE

– I

 

C  

1k  

-0.5  

-0.4  

-0.3  

-0.2  

-0.1  

V

=-1V  

CE  

I

I

=-4.0mA  

=-3.5mA  

B

B

500  

300  

I

I

I

I

=-3.0mA  

=-2.5mA  

=-2.0mA  

=-1.5mA  

B

B

B

B

100  

50  

30  

I

I

=-1.0mA  

=-0.5mA  

B

B

0

10  

0

-0.4  

-0.8  

-1.2  

-1.6  

-2.0  

(V)  

-0.1 -0.3  

-1  

-3  

-10 -30

 

-100 -300

 

-1K  

COLLECTOR-EMITTER VOLTAGE V  

CE  

COLLECTOR CURRENT I

 

(mA)  

C

V

BE(sat),

V

CE(sat)

–

I

C  

I

C

– V

BE  

-5k  

-3k  

-100  

I

=10I  

B

V

CE  

=-1V  

C

-50  

-30  

-1k  

-10  

V

(sat)  

(sat)  

-500  

-300  

BE  

-5  

-3  

-100  

-1  

V

CE  

-50  

-30  

-0.5  

-0.3  

-0.1  

-10  

0

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

(V)  

-1.2  

-0.1 -0.3

 

-1  

-3  

-10 -30

 

-100 -300 -1K  

COLLECTOR CURRENT I

 

(mA)  

C

BASE-EMITTER VOLTAGE V  

BE  

C

ob

–

V

CB  

f

T

– I

 

C  

100  

300  

100  

f=1MHz  

=0  

V

=-10V  

CE  

I

50  

30  

E

10  

50  

30  

5

3

1

10  

-1  

-3 -5

 

-10  

-30 -50

 

-100  

-300  

-1  

-3  

-5  

-10  

-30 -50  

COLLECTOR-BASE VOLTAGE V

 

(V)  

COLLECTOR CURRENT I

 

(mA)  

C

CB  

1999. 10. 25  

Revision No : 1  

2/2