KEC-Semicon-MPSA06-AT-P

SEMICONDUCTOR  

MPSA06  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

DRIVER STAGE AMPLIFIER APPLICATIONS.  

VOLTAGE AMPLIFIER APPLICATIONS.  

B

C

FEATURES  

Complementary to MPSA56.  

DIM MILLIMETERS  

N

A

B

C

D

E

4.70 MAX  

4.80 MAX  

3.70 MAX  

0.45  

E

K

D

G

1.00  

MAXIMUM RATING

 

(Ta=25  

CHARACTERISTIC  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

)

F

1.27  

G

H

J

0.85  

SYMBOL  

RATING  

80  

UNIT  

V

0.45  

_

H

14.00 +0.50  

V

CBO  

V

CEO  

V

EBO  

I

C  

K

L

0.55 MAX  

2.30  

F

F

M

0.45 MAX  

1.00  

80  

V

N

3

1

2

6

V

1. EMITTER  

2. BASE  

500  

mA  

mA  

mW  

3. COLLECTOR  

I

E  

Emitter Current  

-500  

625  

P

C  

Collector Power Dissipation  

Junction Temperature  

Storage Temperature  

TO-92  

T

j  

150  

T

stg  

-55 150  

ELECTRICAL CHARACTERISTICS

 

(Ta=25  

)

CHARACTERISTIC  

Collector Cut-off Current  

SYMBOL  

I

CBO  

TEST CONDITION  

MIN.  

TYP.  

MAX. UNIT  

V

CB

=80V, I

E

=0  

–

–

–

–

–

–

–

–

–

–

100  

nA  

nA  

V

I

CEO  

V

CE

=60V, I

B

=0  

Emitter Cut-off Current  

100  

V

(BR)CEO  

h

FE

(1)  

h

FE

(2)  

V

CE(sat)  

V

BE  

I

C

=1mA, I

B

=0  

Collector-Emitter Breakdown Voltage  

80  

100  

100  

–

–

V

CE

=1V, I

C

=10mA  

V

CE

=1V, I

C

=100mA  

I

C

=100mA, I

B

=10mA  

V

CE

=1V, I

C

=100mA  

V

CE

=2V, I

C

=10mA  

–

–

DC Current Gain  

Collector-Emitter Saturation Voltage  

Base-Emitter Voltage  

0.25  

1.2  

–

V

V

–

f

T  

Transition Frequency  

100  

MHz  

1999. 11. 30  

Revision No : 3  

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