KEC-Semicon-MPSA42-AT-P
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SEMICONDUCTOR
MPSA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B
C
FEATURES
Complementary to MPSA92/93.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
MAXIMUM RATING
(Ta=25
CHARACTERISTIC
)
1.00
SYMBOL
V
CBO
RATING
300
UNIT
V
F
1.27
G
H
J
0.85
MPSA42
0.45
Collector-Base
_
H
14.00 +0.50
Voltage
K
L
0.55 MAX
2.30
MPSA43
200
F
F
M
0.45 MAX
1.00
MPSA42
MPSA43
300
Collector-Emitter
Voltage
N
V
CEO
V
3
1
2
200
1. EMITTER
2. BASE
V
EBO
I
C
Emitter-Base Voltage
Collector Current
Emitter Current
6.0
V
3. COLLECTOR
500
mA
mA
mW
I
E
-500
625
TO-92
P
C
Collector Power Dissipation
Junction Temperature
T
j
150
T
stg
Storage Temperature Range
-55 150
ELECTRICAL CHARACTERISTICS
(Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
300
200
300
200
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Base
V
(BR)CBO
V
V
I
C
=100 A, I
E
=0
I
C
=1.0mA, I
B
=0
Breakdown Voltage
–
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
–
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
V
EB
=6V, I
C
=0
0.1
0.1
0.1
0.1
–
Collector Cut-off
Current
I
CBO
A
–
–
Emitter Cut-off
Current
I
EBO
A
V
EB
=4V, I
C
=0
–
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=20mA, I
B
=2.0mA
I
C
=20mA, I
B
=2.0mA
40
40
40
–
* h
FE
DC Current Gain
–
–
* V
CE(sat)
* V
BE(sat)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
0.5
0.9
–
V
–
V
V
CE
=20V, I
C
=10mA, f=100MHz
50
–
MHz
MPSA42
MPSA43
3.0
4.0
Collector Output
Capacitance
C
ob
V
CB
=20V, I
E
=0, f=1MHz
pF
–
*Pulse Test : Pulse Width
300 S,
Duty Cycle
2.0%
1999. 11. 30
Revision No : 3
1/2
MPSA42/43
1999. 11. 30
Revision No : 3
2/2
