KEC-Semicon-MPSA92-AT-P

SEMICONDUCTOR  

MPSA92/93  

EPITAXIAL PLANAR PNP TRANSISTOR  

TECHNICAL DATA  

HIGH VOLTAGE APPLICATION.  

TELEPHONE APPLICATION.  

B

C

FEATURES  

·

Complementary to MPSA42/43.  

DIM MILLIMETERS  

N

A

B

C

D

E

4.70 MAX  

4.80 MAX  

3.70 MAX  

0.45  

E

K

D

G

MAXIMUM RATING

 

(Ta=25

℃

)  

1.00  

CHARACTERISTIC  

SYMBOL  

V

CBO  

RATING  

-300  

UNIT  

V

F

1.27  

G

H

J

0.85  

MPSA92  

0.45  

Collector-Base  

_

H

14.00 +0.50  

Voltage  

K

L

0.55 MAX  

2.30  

MPSA93  

-200  

F

F

M

0.45 MAX  

1.00  

MPSA92  

MPSA93  

-300  

Collector-Emitter  

Voltage  

N

V

CEO  

V

3

1

2

-200  

1. EMITTER  

2. BASE  

V

EBO  

I

C  

Emitter-Base Voltage  

Collector Current  

Emitter Current  

-5.0  

V

mA  

mA  

mW  

℃

3. COLLECTOR  

-500  

I

E  

500  

TO-92  

P

C  

Collector Power Dissipation  

Junction Temperature  

625  

T

j  

150  

T

stg  

Storage Temperature Range  

-55

∼

150  

℃

ELECTRICAL CHARACTERISTICS

 

(Ta=25

℃

)  

CHARACTERISTIC  

SYMBOL  

TEST CONDITION  

MIN.  

TYP. MAX. UNIT  

MPSA92  

MPSA93  

MPSA92  

MPSA93  

MPSA92  

MPSA93  

-300  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

Collector-Base  

V

(BR)CBO  

I

C

=-100

μ

A, I

E

=0  

V

V

Breakdown Voltage  

-200  

–

–

-300  

Collector-Emitter  

V

(BR)CEO  

I

C

=-1.0mA, I

B

=0  

Breakdown Voltage  

-200  

–

V

CB

=-300V, I

E

=0  

–

–

-0.25  

-0.25  

-0.1  

–

Collector Cut-off  

Current  

I

CBO  

I

EBO  

μ

A  

μ

A  

V

CB

=-150V, I

E

=0  

V

EB

=-3V, I

C

=0  

Emitter Cut-off Current  

–

I

C

=-1.0mA, V

CE

=-10V  

I

C

=-10mA, V

CE

=-10V  

I

C

=-30mA, V

CE

=-10V  

I

C

=-20mA, I

B

=-2.0mA  

I

C

=-20mA, I

B

=-2.0mA  

25  

40  

25  

–

* h

FE  

DC Current Gain  

–

–

* V

CE(sat)  

* V

BE(sat)  

f

T  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

Transition Frequency  

-0.5  

-0.9  

–

V

V

–

V

CE

=-20V, I

C

=-10mA, f=100MHz  

50  

–

MHz  

MPSA92  

MPSA93  

6.0  

8.0  

Collector Output  

Capacitance  

C

ob  

V

CB

=-20V, I

E

=0, f=1MHz  

pF  

–

*Pulse Test : Pulse Width

≦

300

μ

S, Duty Cycle

≦

2%  

1999. 11. 30  

Revision No : 3  

1/2  

MPSA92/93  

f

T

– I

 

C  

h

FE

–

I

C  

300  

100  

100  

V

=10VDC  

CE  

T

T

T

=125 C  

=25 C  

j

50  

30  

j

=-55 C  

j

50  

30  

T

=25 C  

j

V

=20VDC  

CE  

0

10  

-1  

-3 -5  

-10  

-30 -50  

-100  

-1  

-3 -5  

-10  

-30 -50  

-100  

COLLECTOR CURRENT I

 

(mA)  

C

COLLECTOR CURRENT I

 

(mA)  

C

I

C

– V

CE  

C

ob

–

V

R  

100  

BONDING WIRE LIMITATION  

SECOND BREAK DOWN  

LIMITATION T

 

=150 C  

j

50  

30  

C

ib  

-500  

-300  

100

µ

S  

DC  

10  

MPSA92  

5

3

-100  

6

2

5

L

m

I

M

W

I

T

T

-50  

-30  

A

H

T

E

I

R

O

M

=

N

A

T

C

L

ob  

a

2

1

5

C

-0.1 -0.3

 

-1  

-3  

-10 -30

 

-100 -300 -1k  

(V)  

-10  

-5  

REVERSE VOLTAGE V  

R

MPSA93  

-3 -5  

-10  

-30 -50

 

-100  

-300  

(V)  

COLLECTOR-EMITTER VOLTAGE V  

CE  

V

BE(sat) ,

V

CE(sat)

–

I

C  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

0

I

/I =10  

B

C

V

BE(sat)  

V

CE(sat)  

-1  

-3 -5  

-10  

-30 -50

 

-100  

COLLECTOR CURRENT I

 

(mA)  

C

1999. 11. 30  

Revision No : 3  

2/2