KEC-Semicon-TIP41CF-U-PF

SEMICONDUCTOR  

TIP41CF  

EPITAXIAL PLANAR NPN TRANSISTOR  

TECHNICAL DATA  

GENERAL PURPOSE APPLICATION.  

A

C

FEATURES  

DIM MILLIMETERS  

S

Complementary to TIP42CF.  

_

10.

0

+

0

.3  

A

_

15.

0

+

0

.3  

B

C

E

_

2.70 0.3  

+

D

E

F

0.76+0.09/-0.05  

_

Φ

3.2 0.2  

+

_

3.0+0.3  

_

12.0 0.3  

+

G

H

MAXIMUM RATING

 

(Ta=25  

CHARACTERISTIC  

)

0.5+0.1/-0.05  

_

13.6 0.5  

+

J

K

L

L

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  

UNIT  

V

R

_

3.7 0.2  

+

L

1.2+0.25/-0.1  

1.5+0.25/-0.1  

M

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

100  

M

N

P

D

D

_

2.5

4

+

0

.1  

100  

V

_

6.8 0.1  

+

_

4.5 0.2  

+

Q

R

5

V

_

2.

6

+

0.2  

N

N

H

S

0.5 Typ  

DC  

Collector Current  

Pulse  

6

A

I

CP  

10  

1. BASE  

3

2

1

I

B  

Base Current  

2

2

A

W

W

2. COLLECTOR  

3. EMITTER  

Ta=25  

Tc=25  

Collector Power  

Dissipation  

P

C  

25  

TO-220IS  

T

j  

Junction Temperature  

150  

T

stg  

Storage Temperature Range  

-55 150  

ELECTRICAL CHARACTERISTICS

 

(Ta=25  

)

CHARACTERISTIC  

Collector Emitter

 

Sustaining Voltage  

Collector Cut-off Current  

SYMBOL  

V

CEO(SUS)  

TEST CONDITION  

MIN.  

TYP. MAX. UNIT  

I

C

=30mA, I

B

=0  

100  

–

–

–

–

–

–

–

–

–

–

–

0.7  

400  

1

V

I

CEO  

I

CES  

I

EBO  

V

CE

=60V, I

B

=0  

mA  

V

CE

=100V, V

EB

=0  

V

EB

=5V, I

C

=0  

Collector Cut-off Current  

–

A

Emitter Cut-off Current  

–

mA  

V

CE

=4V, I

C

=0.3A  

V

CE

=4V, I

C

=3A  

I

C

=6A, I

B

=600mA  

V

CE

=4V, I

C

=6A  

V

CE

=10V, I

C

=500mA  

30  

15  

–

–

h

FE  

DC Current Gain  

75  

1.5  

2.0  

–

V

CE(sat)  

V

BE(on)  

f

T  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

V

V

–

Transition Frequency  

3.0  

MHz  

2007. 5. 21  

Revision No : 0  

1/2  

TIP41CF  

V

CE(sat)

, V

BE(sat)

–

I

C  

h

FE

– I

C  

1k  

300  

100  

10k  

3k  

V

=4V  

I

/I =10  

B

C

CE  

1k  

V

BE(sat)  

30  

10  

3

300  

100  

30  

V

CE(sat)  

1

10  

1

3

10  

30 100 300 1k  

3k  

10k  

1

3

10  

30 100 300 1k  

3k  

10k  

COLLECTOR CURRENT I

 

(mA)  

C

COLLECTOR CURRENT I

 

(mA)  

C

SAFE OPERATING AREA  

P

C

– Ta  

30  

25  

20  

15  

10  

5

30  

10  

3

I

MAX.(PULSE)  

MAX.  

C

*

I

C

(CONTIN  

-UOUS)  

*

*

*

1

SINGLE NONREPETITIVE  

PULSE Tc=25

 

C  

*

0.3  

0.1  

CURVES MUST BE DERATED  

LINEARLY WITH INCREASE  

IN TEMPERATURE  

0

1

3

10  

30  

100  

300  

0

50  

100  

150  

200  

COLLECTOR-EMITTER VOLTAGE V  

CE  

(V)  

AMBIENT TEMPERATURE Ta (

 

C)  

2007.5. 21  

Revision No : 0  

2/2