KEXIN-2KJ7107DFN
| Part # | KEXIN-2KJ7107DFN |
Download  | KEXIN-2KJ7107DFN |
SMD Type
MOSFET
P-channel MOSFET
2KJ7107DFN
DFN2X2-6L
Ƶ
Features
ƽ
V
DS (V)
= -20V
ƽ
I
D
= -6.0A
ƽ
Low threshold
v
o
ltage
ƽ
Very fast switching
ƽ
Trench MOSFET technology
DFN2X2-6L bottom view
ƽ
2 kV ElectroStatic Discharge (ESD) protection
D
G
S
Ƶ
Absolute Maximum Ratings
(T
A
= 25
ć
Unless otherwise noted)
Parameter
Symbol
Rating
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
V
DS
GS
±8
*1
Continuous Drain Current, t
İ
5 s
Pulsed Drain Current (tp
İ
10
ȝ
s)
I
D
-6.0
A
I
DM
-14.4
1210
515
*1
*2
*3
Power Dissipation
P
D
mW
V
Electrostatic Discharge Voltage
V
ESD
2000
244
in free air
*2
in free air
*1
Thermal Resistance, Junction- to-Ambient
R
ș
JA
104
ć
/W
*1
64
in free air; t
İ
5 s
Junction Temperature
T
J
150
ć
Junction Storage Temperature Range
T
s
t
g
-55 to 150
*1. De
v
i
ce mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
*2. De
v
i
ce mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
*3. HBM; C = 100 pF; R = 1.5 k
ȍ
; Measured between all pins.
1
SMD Type
MOSFET
P-channel MOSFET
2KJ7107DFN
Ƶ
Electrical Characteristics (
T
A
= 25
ć
Unless otherwise noted)
Parameter
Symbol
Test Conditions
=-10
ȝ
A, V
GS
=0V
DS
=-20V, V
GS
=0V
Min
-20
T
y
p
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
I
D
V
V
V
V
V
V
V
V
V
-1
-10
±10
-0.95
40
Zero Gate Voltage Drain Current
I
DSS
ȝ
A
DS
=-20V, V
GS
=0V, T
J
= 150°C
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
DS
=0V, V
GS
=±8V
ȝ
A
V
GS(th)
DS
=V
GS ,
GS
=-4.5V, I
GS
=-4.5V, I
GS
=-2.5V, I
GS
=-1.8V, I
DS
=-10V, I
I
D
=-250
ȝ
A
-0.45
V
28
D
=-2A
D
=-2A, T
=-1.5A
=-1A
J
= 150°C
65
Static Drain-Source On-Resistance
R
DS(O
n
)
m
ȍ
42
63
9
D
65
D
100
Forward Transconductance
Input Capacitance
g
FS
i
s
s
o
s
s
rss
D
=-2A
S
C
804
95
66
6.3
1.2
0.9
7
Output Capacitance
C
V
V
GS
=0V, V
DS
=-10V, f=1MHz
pF
Reverse Transfer Capacitance
Total Gate Charge
C
Q
g
9.5
Gate Source Charge
Gate Drain Charge
Q
gs
gd
d(on)
DS
=-10V, I
D
=-2A, V
GS
= –4.5V
nC
ns
Q
Turn-On DelayTime
t
Turn-On Rise Time
t
r
15
41
14
V
DS
=-10V, I
D
=-2A,
V
GS
= –4.5 V, R
G(ext)
= 6
ȍ
Turn-Off DelayTime
t
d(off)
Turn-Off Fall Time
t
f
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
S
-1.3
-1.2
A
V
V
SD
I
SD
=-0.5 A,V
GS
=0V
Ƶ
Marking
Marking
JAN
2
SMD Type
MOSFET
P-channel MOSFET
2KJ7107DFN
Ƶ
Typical Characterisitics
– 3
-16
-10
-4.5 V
I
V
= -2.5 V
D
GS
I
D
(A)
(A)
-8.0 V
-3.0 V
-12
-8
-4
0
– 4
– 5
– 6
-10
-2.2 V
(1)
(2)
(3)
-2.0 V
-10
-10
-1.8 V
-1.6 V
0
-1
-2
-3
-4
-0.2
-0.4
-0.6
-0.8
-1.0
V
(V)
V
(V)
GS
DS
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -3 V
(1) minimum values
(2) typical values
Fig. 1.
Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 2.
Sub-threshold drain current as a function of
gate-source voltage
180
180
-2.0 V
V
-1.6 V
-2.5 V
R
DSon
ꢀPȍꢁ
R
DSon
ꢀPȍꢁ
= -2.2 V
-1.8 V
GS
120
120
-3.0 V
T =
150 °C
j
60
60
-4.5 V
-8.0 V
T =
25 °C
j
0
0
0
-4
-8
-12
-16
0
-2
-4
-6
I
D
(A)
V
(V)
GS
T
j
= 25 °C
I
D
= -2 A
Fig. 3.
Drain-source on-state resistance as a function
Fig. 4.
Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
3
SMD Type
MOSFET
P-channel MOSFET
2KJ7107DFN
-16
1.5
a
I
D
(A)
-12
1.0
T =
25 °C
j
T =
150 °C
j
-8
-4
0
0.5
0.0
T =
150 °C
j
T =
25 °C
j
0
-1
-2
-3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
V
DS
> I
D
× R
DSon
Fig. 6.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
4
-1.2
10
C
(pF)
V
GS(th)
(V)
max
3
-0.8
-0.4
0.0
10
C
iss
typ
min
2
10
C
C
oss
rss
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
I
D
= -0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig. 7.
Gate-source threshold voltage as a function of
junction temperature
Fig. 8.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
4
SMD Type
MOSFET
P-channel MOSFET
2KJ7107DFN
Ƶ
DFN2X2-6L Package Outline Dimensions
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
5
