KEXIN-2SB772
| Part # | KEXIN-2SB772 |
Download  | KEXIN-2SB772 |
SMD Type
Transistors
PNP Transistor
2SB772
TO-252
Unit: mm
■
Features
+0.
1
5
–
0
.
1
5
+0.1
–
0
.
1
6.50
2.30
●
PNP transistor High current output up to 3A
●
Low Saturation Voltage
●
Complement to 2SD882
+0.2
–
0
.
2
+0.8
–
0
.
7
5.30
0.50
4
0.127
max
+0.1
–
0
.
1
0.80
2
3
1
+0.1
–
0
.
1
0.60
2.3
4.60
1. BASE
+0.
1
5
–
0
.
1
5
2. COLLECTOR
3. EMITTER
4. COLLECTOR
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
Unit
V
-40
-30
V
-7
V
-3
1
A
P
c
W
℃
℃
Junction Temperature
T
J
150
Storage Temperature
T
stg
-55 to 150
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
V
CBO
Test Conditions
I
c
=-100uA ,I
E
=0
Min
-40
-30
-7
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
CEO
V
EBO
I
CBO
I
EBO
I
C
= -10 mA , I
B
=0
V
I
E
= -100 uA ,I
C
=0
V
V
CB
=-30 V , I
E
=0
-1
-1
μA
μA
Emitter cut-off current
V
EB
=-6V , I
C
=0
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A, I
B
=- 0.2A
100
32
400
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
-0.5
-1.5
V
V
I
C
=-2A, I
B
= -0.2A
V
CE
=-5 V, I
C
=-0.1mA,f = 10MHz
50
MHz
1
SMD Type
Transistors
PNP Transistor
2SB772
Typical Characteristics
Derating Curve of Safe Operating Areas
Static Characteristics
150
100
1.6
-I
B
=9mA
-I
B
=8mA
-I
B
=7mA
1.2
0.8
-I
B
=6mA
-I
B
=5mA
-I
B
=4mA
50
-I
B
=3mA
-I
B
=2mA
0.4
0
-I
B
=1mA
16 20
0
0
4
8
12
-50
0
50
100
150
200
-Collector-Emitter voltage (V)
Power Derating
Case Temperature, Tc (
℃
)
Collector Output Capacitance
3
2
1
10
10
10
12
I
E
=0
f=1MHz
8
4
0
0
10
0
-1
-2
-3
-50
0
50
100
150
200
10
10
10
10
Case Temperature, Tc (
℃
)
-Collector-Base Voltage(v)
Safe Operating Area
Current Gain-
Bandwidth Product
3
2
1
1
Ic(max),Pulse
Ic(max),DC
10
10
10
10
10
V
CE
=5V
I
B
=8mA
0
-1
10
0
-2
10
10
-2
-1
0
1
0
1
2
10
10
10
10
10
10
10
Collector-Emitter Voltage
Collector Current, Ic (A)
2
SMD Type
Transistors
PNP Transistor
2SB772
DC Current Gain
Saturation Voltage
3
4
10
10
V
CE
=-2V
V
BE(SAT)
3
10
2
10
2
10
V
CE(SAT)
1
10
1
10
0
0
10
10
0
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
-Collector Current, Ic (mA)
-Collector Current, Ic (mA)
3
