KEXIN-2SC1623

SMD Type  

Transistors  

NPN Transistors  

2SC1623  

SOT-23  

Unit: mm  

+0.1  

-0.1  

2.9  

0.4  

+0.1  

-0.1  

3

Features  

High DC Current Gain:  

h

FE

= 200 TY

P

.  

1

2

+0.1  

+0.05  

-0.01  

0.95  

-0.1  

0.1  

+0.1  

-0.1  

1.9  

V

CE

= 6.0 V, I

C

= 1.0 mA  

High Voltage:  

V

CE O

= 50 V  

1.Base  

2.Emitter  

3.collector  

Absolute Maximum Ratings Ta = 25  

Parameter  

Collector to base voltage  

Collector to emitter voltage  

Emitter to base voltage  

Collector current (DC)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Rating  

Unit  

V

60  

50  

5

V

V

100  

mA  

mW  

Collector power dissipation  

Junction temperature  

P

C  

200  

T

j  

150  

Storage temperature range  

T

stg  

-55 to +150  

Electrical Characteristics Ta = 25  

Parameter  

Symbol  

Testconditions  

V

CB

= 60V, I

E

=0  

Min  

90  

Typ  

Max  

0.1  

0.1  

600  

0.3  

1

Unit  

A

Collector cutoff current  

Emitter cutoff current  

I

CBO  

I

EBO  

h

FE  

V

EB

= 5V, I

C

=0  

A

DC current gain *  

V

CE

= 6V , I

C

= 1mA  

200  

0.15  

0.86  

Collector-emitter saturation voltage

 

*  

Base-emitter saturation voltage *  

Base-emitter voltage *  

V

CE(sat)

I

C

= 100mA , I

B

= 10mA  

V

BE(sat)

I

C

= 100mA , I

B

= 10mA  

V

V

V

BE  

C

ob  

f

T  

V

CE

= 6V , I

C

= 1mA  

0.55 0.62 0.65  

V

Output capacitance  

V

CB

= 6V , I

E

= 0 , f = 1.0MHz  

V

CE

= 6V , I

E

= -10mA  

3.0  

pF  

MHz  

Transiton Frequency  

250  

*. PW

 

350 us

,

d

uty cycle

 

2%  

h

FE

Classification  

Marking  

hFE  

L4  

L5  

L6  

200 to 400  

L7  

90 to 180  

135 to 270  

300 to 600  

1

SMD Type  

Tra

n

D

s

i

i

s

o

t

d

o

e

rs  

2SC1623  

Typical Characteristics  

Static Characteristic  

h

FE

——  

I

C  

4

3

2

1

0

1000  

COMMON  

EMITTER  

T

a

=25

℃

 

10uA  

9uA  

T

a

=100

℃  

8uA  

7uA  

T

a

=25

℃  

6uA  

5uA  

100  

4uA  

3uA  

2uA  

I

B

=1uA  

COMMON EMITTER  

V

CE

= 6V  

10  

0.1  

0

2

4

6

8

1

10  

100  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

CEsat

——  

I

C  

V

BEsat

——  

I

C  

2000  

1000  

300  

100  

T

a

=25

℃  

T

a

=100

℃  

T

a

=100

℃  

T

a

=25

℃  

β

=10  

β

=10  

10  

0.1  

100  

0.1  

1

10  

100  

1

10  

100  

COLLECTOR CURREMT

 

I

C

(mA)  

COLLECTOR CURREMT

 

I

C

(mA)  

I

C

—— V

BE  

f

T

—— I

C  

100  

1000  

100  

10  

10  

1

COMMON EMITTER  

V

CE

=6V  

COMMON EMITTER  

V

CE

=6V  

T

a

=25

℃  

0.1  

0.0  

0.3  

0.6  

0.9  

1.2  

1

10  

70  

COLLECTOR CURRENT

 

I

C

(mA)  

BASE-EMMITER VOLTAGE

 

V

BE

(V)  

P

C

—— T

a  

C

ob

/C

ib

——  

V

CB

/V

EB  

250  

200  

150  

100  

50  

50  

10  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

C

ob  

1

0

0.1  

0

25  

50  

75  

100  

125  

150  

0.1  

1

10  

20  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

REVERSE VOLTAGE  

V

(V)  

2