KEXIN-2SD1007-P

SMD Type  

Transistors  

NPN Transistors  

2SD1007  

1.70 0.1  

Features  

High collector to emitter voltage: V

CEO

120V.  

0.42 0.1  

0.46 0.1  

1.Base  

2.Collector  

3.Emitter  

Absolute Maximum Ratings Ta = 25  

Parameter  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Rating  

Unit  

V

120  

120  

5

V

V

Collector current  

0.7  

1.2  

2

A

Collector current (pulse)

 

*  

Collector power

 

dissipation  

Junction temperature  

I

C (pu)  

P

c  

A

W

T

j  

150  

Storage temperature  

T

stg  

-55 to +150  

*. PW

 

10ms,duty cycle

 

50%  

Electrical Characteristics Ta = 25  

Parameter  

Base-emitter voltage *  

Collector cutoff current  

Emitter cutoff current  

Symbol  

V

BE  

Testconditions  

Min  

550  

Typ  

620  

Max  

650  

100  

100  

Unit  

mV  

nA  

V

CE

=10V , I

C

= 10mA  

V

CB

= 120V, I

E

=0  

I

CBO  

I

EBO  

V

EB

= 5V, I

C

=0  

nA  

V

CE

=1V , I

C

= 5.0mA  

V

CE

=1V , I

C

= 100mA  

45  

90  

200  

200  

0.3  

0.9  

10  

DC current gain *  

h

FE  

400  

0.6  

1.5  

Collector-emitter saturation voltage *  

Base-emitter saturation voltage *  

Output capacitance  

V

CE(sat)

I

C

= 500mA , I

B

= 50mA  

V

BE(sat)

I

C

= 500mA , I

B

= 50mA  

V

V

C

ob  

f

T  

V

CB

= 10V , I

E

= 0 , f = 1.0MHz  

V

CE

= 10V , I

E

= -10mA  

pF  

Transition frequency  

90  

MHz  

*. PW

 

350us,duty cycle

 

2%  

h

FE

Classification(2)  

Marking  

hFE  

HR  

HQ  

HP  

200 400  

90 180  

135 270  

1