KEXIN-2SD882
| Part # | KEXIN-2SD882 |
Download  | KEXIN-2SD882 |
T
r
a
n
s
i
s
t
o
rs
SMD Type
NPN Silicon Power Transistor
2SD882
TO-252
Unit: mm
■
Features
+0.15
6.50
-0.15
+0.1
2.30
-0.1
●
Collector Power Dissipation: P
C
=1.25W
+0.2
5.30
-0.2
+0.8
0.50
-0.7
●
Collector Current: I
C
=3A
0.127
max
+0.1
0.80
-0.1
2
1
3
+0.1
0.60
-0.1
2.3
4.60
1 Base
+0.15
-0.15
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
Unit
40
V
V
30
5
3
V
A
P
c
1.25
W
ć
ć
Junction Temperature
T
J
150
Storage Temperature
T
stg
-55 to 150
Ƶ
ć
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
I
c
=100uA ,I
E
=0
Min
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
40
30
5
I
C
= 10 mA , I
B
=0
I
E
= 100 uA ,I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=30 V , I
B
=0
V
EB
=6V , I
C
=0
V
V
1
10
1
uA
uA
uA
Collector cut-off current
Emitter cut-off current
V
CE
= 2V, I
C
= 1A
V
CE
=2V, I
C
= 100mA
I
C
=2A, I
B
= 0.2A
I
C
=2A, I
B
= 0.2A
60
32
400
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
0.5
1.5
V
V
V
CE
=5 V, I
C
=0.1mA,f = 10MHz
50
MHz
Ƶ
hFE Classification
Rank
hFE
R
Q
P
GR
̚
60 120
̚
100 200
̚
160 320
̚
200 400
■
Marking
Marking
D882
1
