KEXIN-AO3400
| Part # | KEXIN-AO3400 |
Download  | KEXIN-AO3400 |
SMD Type
MOSF
E
T
N-Channel Enhancement Mode
Field Effect Transistor
KO3400
(AO3400)
SOT-23
Unit: mm
+0.1
-0.1
Features
2.9
0.4
+0.1
-0.1
V
DS (V)
= 30V
3
I
D
= 5.8 A (V
GS
= 10V)
R
DS(ON)
R
DS(ON)
R
DS(ON)
28m (V
GS
= 10V)
1
2
33m (V
GS
= 4.5V)
52m (V
GS
= 2.5V)
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
V
DS
Rating
Unit
V
30
Gate-Source Voltage
V
GS
V
12
5.8
Continuous Drain Current
T
A
=25
T
A
=70
I
D
A
4.9
Pulsed Drain Current
*
Power Dissipation
I
DM
P
D
30
1.4
T
A
=25
T
A
=70
W
1
85
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction and Storage Temperature Range
R
thJA
R
thc
/W
/W
43
T
J
, T
STG
-55 to 150
* Repetitive rating, pulse width limited by junction temperature.
1
SMD Type
MOSF
E
T
KO3400
(AO3400)
Electrical Characteristics Ta = 25
Parameter
Symbol
V
DSS
Testconditons
Min
30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
I
D
=250 A,
V
GS
=0V
V
DS
=24V, V
GS
=0V
1
Zero Gate Voltage Drain Current
I
DSS
A
5
V
DS
=24V, V
GS
=0V ,T
J
=55
V
DS
=0V, V
GS
= 12V
Gate-Body leakage current
Gate Threshold Voltage
I
GSS
nA
V
100
1.4
28
39
33
52
V
GS(th)
0.7
1.1
22.8
32
V
DS
=V
GS
I
D
=250
V
GS
=10V, I
D
=5.8A
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
A
m
T
J
=125
Static Drain-Source On-Resistance
R
DS(ON)
27.3
43.3
m
m
On state drain current
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=5A
30
10
A
Forward Transconductance
Input Capacitance
15
S
823 1050
pF
pF
pF
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=5.8A
Output Capacitance
99
77
Reverse Transfer Capacitance
Gate resistance
1.4
9.7
1.6
3.1
3.3
4.8
26.3
4.1
16
2
Total Gate Charge
Q
g
12
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
Gate Source Charge
Q
gs
Q
gd
t
D(on)
t
r
Gate Drain Charge
Turn-On DelayTime
5
7
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=2.7 ,R
GEN
=3
Turn-Off DelayTime
t
D(off)
t
f
40
6
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current *
Diode Forward Voltage
t
rr
20
12
2.5
30
1
I
F
=5A, d
I
/d
t
=100A/
I
F
=5A, d
I
/d
t
=100A/
s
s
Q
rr
8.9
I
S
I
SM
V
SD
A
I
S
=1A,V
GS
=0V
0.71
V
* Repetitive rating, pulse width limited by junction temperature.
2
