KEXIN-AO3415

Part #	KEXIN-AO3415
Download	KEXIN-AO3415

SMD Type

MOSFET

P-Channel

MOSFET

AO3415

(KO341

5

)

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■

Features

3

●

V

DS (V)

=-20V

●

I

D

=-5 A (V

GS

=-4.5V)

●

R

DS(ON)

＜

43m

Ω

(V

GS

=-4.5V)

●

R

DS(ON)

＜

55m

Ω

(V

GS

=-2.5V)

●

R

DS(ON)

＜

75m

Ω

(V

GS

=-1.8V)

●

R

DS(ON)

＜

100m

Ω

(V

GS

=-1.5V)

1

2

+0.02

-0.02

+0.1

0.15

0.95

-0.1

+0.1

-0.2

1.9

1. Gate

D

S

2. Source

3. Drain

G

■

Absolute Maximum Ratings Ta = 25

℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

±

8

-5

Unit

V

DS

GS

V

Gate-Source Voltage

V

T

T

A

=25°C

=70°C

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

I

D

A

A

-4

I

DM

-30

1.5

1

T

T

A

=25°C

=70°C

P

D

W

A

80

t

≤

10s

Steady-State

Thermal Resistance.Junction- to-Ambient

R

thJA

thJL

100

52

℃

/W

℃

Thermal Resistance.Junction- to-Lead

Junction Temperature

R

T

J

150

Junction Storage Temperature Range

T

stg

-55 to 150

1

www.kexin.com.cn

SMD Type

MOSFET

P-Channel

MOSFET

AO3415

(KO3415)

■

Electrical Characteristics Ta = 25

℃

Parameter

Symbol

Test Conditions

D

=-250

μ

A, V

GS

=0V

Min

-20

Typ

Max

Unit

V

Drain-Source Breakdown Voltage

V

DSS

I

V

V

V

V

V

V

V

V

V

V

V

DS

=-20V, V

GS

=0V

DS

=-20V, V

GS

=0V, T

DS

=0V, V

GS

=

±

8V

-1

-5

Zero Gate Voltage Drain Current

I

DSS

GSS

uA

J

=55

℃

Gate-Body leakage current

Gate Threshold Voltage

I

uA

V

±

0.1

-0.9

43

V

GS(th)

-0.3

DS

=V

GS

I

D

=-250

μ

A

GS

=-4.5V, I

GS

=-4.5V, I

^{GS
=-2.5V, I}

GS

=-1.8V, I

^{GS
=-1.5V, I}

D

=-4A

D

=-4A

D

=-4A

D

=-2A

D

=-1A

59

T

J

=125

℃

Static Drain-Source On-Resistance

R

DS(O

n

)

55

m

Ω

75

100

On state drain current

I

D(ON)

FS

iss

oss

GS

=-4.5V, V

DS

=-5V

^{DS
=-5V, I

=-4 A}

-30

A

S

Forward Transconductance

Input Capacitance

g

D

20

C

600

80

905

150

115

20

V

V

V

GS

=0V, V

DS

=-10V, f=1MHz

GS

=0V, V

DS

=0V, f=1MHz

pF

Output Capacitance

C

Reverse Transfer Capacitance

Gate resistance

C

rss

48

R

g

6

Ω

Total Gate Charge

Q

g

7.4

0.8

1.3

11

GS

=-4.5V, V

DS

=-10V, I

D

=-4A

nC

Gate Source Charge

Q

gs

gd

1.2

3.1

Gate Drain Charge

Q

Turn-On DelayTime

t

d(on)

13

9

Turn-On Rise Time

t

r

V

GS

=-4.5V, V

DS

=-10V, R

L

=2.5

Ω

,

R

GEN

=3

Ω

ns

Turn-Off DelayTime

t

d(off)

19

29

Turn-Off Fall Time

t

f

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage

t

rr

rr

20

40

32

62

-2

I

I

F

=-4A, d

I

/d

t

=100A/

μ

s

Q

nC

A

I

S

V

SD

S

=-1A,V

GS

=0V

-1

V

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■

Marking

Marking

AF9T

2

www.kexin.com.cn

SMD Type

MOSFET

P-Channel

MOSFET

AO3415

(KO341

5

)

■

Typical Characterisitics

40

15

-8V

-4.5V

V

DS

=-5V

35

-3.0V

-2.5V

12

9

30

25

20

15

10

5

-2.0V

6

3

125

°

C

25

°

C

V

GS

=-1.5V

4

0

0

0

0.5

1

1.5

2

0

1

2

3

5

-V

GS

(Volts)

Figure 2: Transfer Characteristics (Note E)

-V

DS

(Volts)

Fig 1: On-Region Characteristics (Note E)

100

80

1.60

1.40

1.20

1.00

0.80

I

D

=-4A, V

GS

=-4.5V

I

D

=-4A, V

GS

=-2.5V

V

GS

=-1.5V

60

I

D

=-2A, V

GS

=-1.8V

V

GS

=-1.8V

40

V

GS

=-2.5V

V

GS

=-4.5V

20

0

25

50

75

100

125

150

175

0

2

4

6

8

10

Temperature (

°

C

)

-I

D

(A)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

120

100

80

I

D

=-4A

125

°

C

25

°

C

60

125

°

C

25

°

C

40

20

0.0

0.2

0.4

-V

SD

(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

0

2

4

6

8

-V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

3

www.kexin.com.cn

SMD Type

MOSFET

P-Channel

MOSFET

AO3415

(KO341

5

)

■

Typical Characterisitics

1400

1200

1000

800

600

400

200

0

5

V

DS

=-10V

I

D

=-4A

4

C

iss

3

2

1

0

C

oss

C

rss

0

5

10

-V

DS

(Volts)

15

20

0

2

4

6

8

10

12

Q

g

(nC)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

1000

100.0

10.0

1.0

T

J(Max)

=150

°

C

T

A

=25

°

C

10

µ

s

R

DS(ON)

limited

100

10

1

100

µ

s

1ms

10ms

DC

100ms

10s

0.1

T

J(Max)

=150

°

C

T

A

=25

°

C

0.0

0.00001

0.001

0.1

10

1000

0.01

0.1

1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

-V

DS

(Volts)

.

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

1

D=T

on

/T

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R

θ

JA

=100

°

C/W

0.1

0.01

P

D

Single Pulse

T

on

T

0.001

0.00001

0.0001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

1

10

100

1000

4

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