KEXIN-BCX53-16
| Part # | KEXIN-BCX53-16 |
Download  | KEXIN-BCX53-16 |
SMD Type
Transistors
PNP Transistors
BCX51
、
BCX52
、
BCX53
（
KCX51
、
KCX52
、
KCX53
）
1.70 0.1
Features
●
NPN Complements to BCX54,BCX55,BCX56
●
Low Voltage
●
High Current
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
V
CBO
Rating
Unit
V
Collector-base voltage
BCX51
-45
-60
-100
-45
-60
-80
-5
BCX52
BCX53
BCX51
BCX52
BCX53
V
V
Collector-emitter voltage
V
CEO
V
V
V
Emitter-base voltage
Collector current
V
EBO
I
C
V
-1
A
Peak collector current
Peak base current
I
CM
-1.5
-200
1.3
A
I
BM
mA
W
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
P
tot
T
stg
T
j
-65 to +150
150
-65 to +150
94
T
amb
R
th(j-a)
R
th(j-s)
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
K/W
K/W
14
1
SMD Type
Transistors
BCX51
、
BCX52
、
BCX53
（
KCX51
、
KCX52
、
KCX53
）
Electrical Characteristics Ta = 25
Parameter
Symbol
I
CBO
Testconditions
V
CB
= -30 V, I
E
= 0
Min
Typ
Max
-100
-10
Unit
nA
Collector cutoff current
uA
V
CB
= -30 V, I
E
= 0; Tj = 125
V
EB
= -5 V, I
C
= 0
Emitter cutoff current
DC current gain
I
EBO
h
FE
-100
nA
I
C
= -5 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
I
C
= -500 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
63
63
250
40
DC current gain
BCX51-10,BCX52-10,BCX53-10
BCX51-16,BCX52-16,BCX53-16
Collector-emitter saturation voltage
Base to emitter voltage
h
FE
63
160
250
-500
-1
100
V
CE(sat)
I
C
= -500 mA; I
B
= -50 mA
mV
V
V
BE
f
T
I
C
= -500 mA; V
CE
= -2 V
Transition frequency
I
C
= -10 mA
;
V
CE
= -5 V; f = 100 MHz
50
MHz
h
FE
Classification
TYPE
BCX51
AA
BCX51-10
AC
BCX51-16
Marking
AD
TYPE
BCX52
AE
BCX52-10
AG
BCX52-16
AM
Marking
TYPE
BCX53
AH
BCX53-10
AK
BCX53-16
AL
Marking
■
Typical Characterisitics
MBH730
160
h
V
= 2
V
–
FE
CE
120
80
40
0
1
–
2
3
4
10
1
–
10
–
10
–
10
–
10
–
–
I
(mA)
C
Fig.1 DC
current gain; typical values.
2
