KEXIN-KI2300

SMD Type  

MOSF

I

E

C

T  

N-Channel Enhancement

MOSFET  

SI2300

(

KI2300)  

SOT-23-3  

Unit: mm  

+0.2  

2.9  

0.4  

-0.1  

Features  

V

DS

=20V  

I

D

=5.0A  

+0.1  

-0.1  

3

R

DS(ON)

=25m @V

GS

=4.5V,I

D

=5.0A  

R

DS(ON)

=35m @V

GS

=2.5V,I

D

=4.0A  

R

DS(ON)

=55m @V

GS

=1.8V,I

D

=1.0A  

1

2

+0.02  

-0.02  

+0.1  

-0.1  

0.15  

0.95  

+0.1  

-0.2  

1.9  

1. Gate  

2. Source  

3. Drain  

Absolute Maximum Ratings Ta = 25  

Parameter  

Drain-Source Voltage  

Symbol  

Rating  

20  

Unit  

V

V

DS  

GS  

Gate-Source Voltage  

V

±10  

I

D

5.0  

Continuous Drain Current

 

Tj=125  

Pulsed Drain Current  

A

I

DM  

15  

Power Dissipation  

P

D

1.25  

100  

W

Thermal Resistance.Junction- to-Ambient  

Junction Temperature  

R

thJA  

/W  

T

J

150  

Storage Temperature Range  

T

stg  

-55 to 150  

1

SMD Type  

MOSF

I

E

C

T  

SI2300

(

KI2300)  

Electrical Characteristics Ta = 25  

Parameter  

Symbol  

V

DSS  

I

DSS  

Testconditions  

Min  

20  

Typ  

Max  

Unit  

V

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage  

V

GS

=0V,I

D

=250uA  

V

DS

=20V,V

GS

=0V  

V

GS

= 10V,V

DS

=0V  

1

uA  

nA  

V

I

GSS  

100  

1.0  

25  

Gate Threshold Voltage *  

V

GS(th)

V

GS

=V

DS

,I

D

=250uA  

V

GS

=4.5V,I

D

=5.0A  

0.4  

0.7  

20  

27  

39  

m

Drain- Source on-state Resistance *  

R

DS(ON)  

V

GS

=2.5V,I

D

=4.0A  

V

GS

=1.8V,I

D

=1.0A  

V

DS

=5V,I

D

=5A  

35  

m

55  

m

Forward Transconductance *  

Input Capacitance  

g

FS  

C

ISS  

C

OSS  

C

RSS  

t

D(on)  

t

r  

5

S

88

7

 

144  

115  

31.8  

14.5  

50.3  

31.9  

16.8  

2.5  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

A

V

DS

= 15V, V

GS

= 0V,f =1.0MH

Z

 

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Rise Time  

V

DD

=10V,I

D

=1A,V

GS

=4.5V,R

L

=10  

R

GEN

=6  

,

Turn-Off Delay Time  

t

D(off)  

t

f  

Fall Time  

Total Gate Charge  

Q

g  

V

DS

= 10V, I

D

= 3.5A,V

GS

= 4.5V  

V

GS

=0V,I

S

=1.25A  

Gate-S ource Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

I

S  

5.4  

Drain-Source Diode Forward Current *  

Diode Forward Voltage  

* Pulse Test:Pulse Width

 

300 s,Duty

 

Cycle 2%  

1.25  

V

SD  

0.825 1.2  

V

Marking  

Marking  

00A*  

2

SMD Type  

MOSFET  

SI2300

(KI2300)  

Ŷ

Typical Characterisitics  

10  

16  

8V  

4.5V  

V

DS

=5V  

8

12  

2V  

6

4

3V  

2.5V  

8

125°C  

4

0

V

GS

=1.

8

V  

2

0

25°C  

0

1

2

3

4

5

0

0.5  

1

1.5  

2

2.5  

V

V

Figure 2: Transfer Characteristics  

Fig 1: On-Region Characteristics  

8

0  

60  

4

0  

2

0  

0

1.8  

1.6  

1.4  

1.2  

1

V

GS

=2.5  

V

GS

=1.8V  

V

GS

=1.8V  

I

D

=

5

.

0

A  

V

GS

=4.5V  

V

GS

=2.5V  

V

GS

=4.5V  

0.8  

0

4

8

12  

0

25  

50  

75  

100  

125  

150  

175  

I

D

(A)  

Temperature (°C)  

Figure 3: On-Resistance vs. Drain Current and  

Gate Voltage  

Figure 4: On-Resistance vs. Junction  

Temperature  

1E+01  

1E+00  

1E-01  

1E-02  

1E-03  

1E-04  

1E-05  

8

0  

6

0  

4

0  

2

0  

0

I

D

=

5

.

0

A  

125°C  

125°C  

25°C  

25°C  

0.0  

0.2  

0.4  

V

SD

(Volts)  

Figure 6: Body-Diode Characteristics  

0.6  

0.8  

1.0  

0

2

4

6

8

V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

3