KEXIN-KI2301
| Part # | KEXIN-KI2301 |
Download  | KEXIN-KI2301 |
SMD Type
MOSFET
P-Channel Enhancement MOSFET
SI2301
(KI2301)
Ƶ
Features
627ꢅꢆꢉ
8QLWꢌ PP
ꢃꢀꢁꢄ
ꢅꢀꢁꢄ
ꢆꢁꢇ
ƽ
V
DS (V)
=-20V
ꢃꢀꢁꢄ
ꢅꢀꢁꢄ
ꢀꢁꢂ
ƽ
R
DS(ON)
˘
130m
¡
(V
GS
=-4.5V)
ƽ
R
DS(ON)
˘
190m
¡
(V
GS
=-2.5V)
3
1
2
ꢃꢀꢁꢄ
ꢅꢀꢁꢄ
ꢃꢀꢁꢀꢈ
ꢅꢀꢁꢀꢄ
ꢀꢁꢇꢈ
ꢀꢁꢄ
ꢃꢀꢁꢄ
ꢅꢀꢁꢄ
ꢄꢁꢇ
*
6
ꢂ
ꢀ
ꢄꢁ*DWH
ꢁ
‘
ꢆꢁ6RXUFH
ꢉꢁ’UDLQ
Ƶ
Absolute Maximum Ratings Ta = 25
ć
Parameter
Drain-Source Voltage
Symbol
Rating
-20
Unit
V
V
DS
GS
Gate-Source Voltage
V
fꢀ
-2.3
-1.5
-10
Continuous Drain Current
*1
Ta=25
ć
Ta=70
ć
I
D
A
Pulsed Drain Current
*2
Power Dissipation
*1
I
DM
1.25
0.8
Ta=25
ć
Ta=70
ć
P
D
W
ć
/W
ć
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *3
Junction Temperature
100
166
150
R
thJA
T
J
Storage Temperature Range
T
stg
-55 to 150
*1 Surface Mounted on FR4 Board, t
İ
5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
1
SMD Type
MOSFET
P-Channel Enhancement
MOSFET
SI2301
(KI2301)
Ƶ
Electrical Characteristics Ta = 25
ć
Parameter
Symbol
Test Conditions
D
=-250
A, V
GS
=0V
Min
-20
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
I
V
V
V
V
V
V
V
V
V
DS
=-20V, V
GS
=0V
DS
=-20V, V
GS
=0V, T
DS
=0V, V
GS
=
f
8V
-1
-10
Zero Gate Voltage Drain Current
I
DSS
A
J
=55
ć
Gate-Body leakage current
Gate Threshold Voltage
I
GSS
nA
V
f
100
-1
V
GS(th)
-0.45
DS
=V
GS
I
D
=-250
A
GS
=-4.5V, I
GS
=-2.5V, I
D
=-2.8A
=-2.0A
105
145
130
190
Static Drain-Source On-Resistance *1
On state drain current *1
R
DS(O
n
)
m
¡
D
-6
-3
GS=
-4.5V, V
DS
İ
-5V
GS=
-2.5V, V
DS
İ
-5V
I
D(ON)
A
S
Forward Transconductance *1
Input Capacitance
g
FS
iss
oss
DS
=-5V, I
D
=-2.8A
6.5
415
223
87
C
V
V
V
GS
=0V, V
DS
=-6V, f=1MHz *2
pF
nC
Output Capacitance
C
Reverse Transfer Capacitance
Total Gate Charge
C
rss
ꢁ
Q
g
5.8
0.85
1.7
13
10
GS
=-4.5V, V
DS
=-6V, I
D
=-2.8A *2
Gate Source Charge
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
25
60
Turn-On Rise Time
t
r
36
GEN
=-4.5V, V
DS
=-6V, R
L
=6
¡
,R
G
=6
¡
ns
Turn-Off DelayTime
t
d(off)
I
D
=1.0A *3
42
70
Turn-Off Fall Time
t
f
34
60
Continuous Source Current (Diode Conduction
Diode Forward Voltage
Is
-1.6
-1.2
A
V
V
SD
I
S
=-1.6A,V
GS
=0V
-0.8
*1 Pulse
test: PW
İ
300us duty cycle
İ
2%.
*2 For DESIGN AID ONLY, not subject to production testing.
*3 Switching time is essentially independent of operating temperature.
Ƶ
Marking
Marking
A1*
2
SMD Type
MOSFET
P-Channel Enhancement
MOSFET
SI2301
(KI2301)
Ƶ
Typical Characterisitics
Output Characteristics
T
r
ansfer Characteristics
ꢂꢇ
ꢂꢇ
9
ꢄ ꢄꢋꢍꢄꢈꢌꢋꢍꢄꢈꢍꢄꢁꢌꢋꢍꢄꢁꢄ9
ꢀꢌꢋꢄ9
*6
7
ꢄ
ꢄ
ꢃ
ꢋ
ꢋ&
ꢀꢋ
&
&
ꢊ
ꢊ
ꢉ
ꢉ
ꢂꢀꢋ
&
ꢀꢄ9
ꢈ
ꢈ
ꢀ
ꢀ
ꢇꢍꢄꢇꢌꢋꢍꢄꢂꢄ9
ꢂꢌꢋꢄ9
ꢇ
ꢇ
ꢇ
ꢂ
ꢀ
ꢁ
ꢈ
ꢋ
ꢇꢌꢇ
ꢇꢌꢋ
ꢂꢌꢇ
ꢂꢌꢋ
ꢀꢌꢇ
ꢀꢌꢋ
ꢁꢌꢇ
V
– Drain-to-Source
Voltage (V)
V
GS
– Gate-to-Source
Voltage (V)
Capacitance
DS
On-Resistance vs.
Drain Current
ꢇꢌꢉ
ꢂꢇꢇꢇ
ꢊꢇꢇ
ꢉꢇꢇ
ꢈꢇꢇ
ꢀꢇꢇ
ꢇ
ꢇꢌꢋ
ꢇꢌꢈ
ꢇꢌꢁ
ꢇꢌꢀ
ꢇꢌꢂ
ꢇꢌꢇ
&
LVV
9
ꢄ ꢄꢀꢌꢋꢄ9
*6
&
RVV
9
ꢄ ꢄꢈꢌꢋꢄ9
&
*6
UVV
ꢇ
ꢀ
ꢈ
ꢉ
ꢊ
ꢂꢇ
ꢇ
ꢁ
ꢉ
Drain-to-Source Voltage (V)
On-Resistance vs. Junction T
emperature
ꢄ ꢄꢈꢌꢋꢄ9
ꢎ
ꢂꢀ
I
D
–
Drain Current (A)
V
–
DS
Gate Charge
ꢋ
ꢈ
ꢁ
ꢀ
ꢂ
ꢇ
ꢂꢌꢊ
ꢂꢌꢉ
ꢂꢌꢈ
ꢂꢌꢀ
ꢂꢌꢇ
ꢇꢌꢊ
ꢇꢌꢉ
9
ꢄ ꢄꢉꢄ9
,
ꢄ ꢄꢀꢌꢊꢄ$
9
*6
‘6
,
ꢄ ꢄꢀꢌꢊꢄ$
‘
‘
ꢇ
ꢀ
ꢈ
ꢉ
ꢊ
ꢃ
ꢋ
ꢇ
ꢇ
ꢋꢇ
ꢂꢇꢇ
ꢂꢋꢇ
。
Q
–
T
o
tal
Gate Charge (nC)
T
ꢄ
– Junction
T
e
mperature ( C)
J
3
SMD Type
MOSFET
P-Channel Enhancement
MOSFET
SI2301
(KI2301)
Ƶ
Typical Characterisitics
Source-Drain Diode
Forward V oltage
On-Resistance vs. Gate-to-Source
Voltage
ꢇꢌꢉ
ꢇꢌꢋ
ꢇꢌꢈ
ꢇꢌꢁ
ꢇꢌꢀ
ꢇꢌꢂ
ꢇꢌꢇ
ꢂꢇ
7
ꢄ ꢄꢂꢋꢇ
&
–
,
ꢄ ꢄꢀꢌꢊꢄ$
‘
7
ꢄ ꢄꢀꢋ
&
–
ꢂ
ꢇꢌꢀ
ꢇꢌꢈ
ꢇꢌꢉ
ꢇꢌꢊ
ꢂꢌꢇ
ꢂꢌꢀ
ꢂꢌꢈ
ꢂꢌꢉ
ꢇ
ꢀ
ꢈ
ꢉ
ꢊ
ꢁ
V
SD
–
Source-to-Drain Voltage (V)
Threshold V oltage
V
– Gate-to-Source Voltage (V)
Single Pulse Power
GS
ꢇꢌꢈ
ꢇꢌꢁ
ꢂꢈ
ꢂꢀ
ꢂꢇ
ꢊ
ꢇꢌꢀ
,
ꢄ ꢄꢀꢋꢇ
ꢄ
$
‘
7
ꢄ ꢄꢀꢋ
&
ꢇꢌꢂ
&
6LQJOHꢄ3XOVH
ꢉ
ꢇꢌꢇ
ꢈ
ꢃ
ꢇ
ꢌꢂ
ꢃ
ꢇ
ꢌꢀ
ꢀ
ꢇ
.
ꢃ
ꢋ
ꢇ
ꢇ
ꢋꢇ
–
T
e
mperature (
C)
ꢂꢇꢇ
ꢂꢋꢇ
ꢇꢌꢇꢂ
ꢇꢌꢂꢇ
ꢂꢌꢇꢇ
ꢂꢇꢌꢇꢇ
T
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
ꢀ
ꢂ
‘XWꢄ&FOHꢄ ꢄꢇꢌꢋ
ꢇꢌꢀ
ꢇꢌꢂ
ꢇꢌꢂ
ꢇꢌꢇꢋ
ꢇꢌꢇꢀ
6LQJOHꢄ3XOVH
ꢇꢌꢇꢂ
ꢃꢈ
ꢃꢁ
ꢃꢀ
ꢃꢂ
ꢂꢇ
ꢂꢇ
ꢂꢇ
ꢂꢇ
ꢂ
ꢂꢇ
ꢁꢇ
Square Wave Pulse Duration (sec)
4
