KEXIN-KRLML6401
| Part # | KEXIN-KRLML6401 |
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MOSFET
S
MD Type
P-Channel Enhancement
MOSFET
IRLML6401
( RLML6401)
K
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
■
Features
+0.1
-0.1
●
Ultra low on-resistance.
●
P-Channel MOSFET.
●
Fast switching.
3
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
1. Gate
2. Source
3. Drain
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
-12
Unit
V
DS
GS
V
Gate-Source Voltage
V
±8
-4.3
Continuous Drain Current
V
GS
=4.5V @
T
A
=25
℃
=70
℃
I
D
A
-3.4
Continuous Drain Current
VGS=4.5V@ T
A
Pulsed Drain Current
Power Dissipation
Power Dissipation
a
I
DM
-34
1.3
@ TA=25
℃
P
D
W
0.8
@ TA=70
℃
Single Pulse Avalanche Energy
b
E
AS
33
mJ
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
R
thJA
100
℃
/W
W/
℃
0.01
150
Junction Temperature
T
J
℃
Junction and Storage Temperature Range
T
stg
-55 to 150
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting T =25
℃
, L=3.5mH,
R =25
Ω
, I
AS
=-4.3A
J
G
1
IRLML6401
( RLML6401)
K
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=-250
μ
A, V
GS
=0V
Min
-12
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
I
V
V
V
V
V
V
V
V
DS
=-12V, V
GS
=0V
DS
=-9.6V, V
GS
=0V, T
DS
=0V, V
GS
=
±
8V
-1
Zero Gate Voltage Drain Current
I
DSS
GSS
μ
A
-25
J
= 55
℃
Gate-Body leakage current
Gate Threshold Voltage
I
nA
V
±
100
V
GS(th)
-0.4 -0.55
-0.95
DS
=V
GS
I
D
=-250
μ
A
GS
=-4.5V, I
GS
=-2.5V, I
GS
=-1.8V, I
D
=-4.3A
D
=-2.5A
D
=-2A
50
Static Drain-Source On-Resistance
R
DS(O
n
)
85
m
Ω
S
125
Forward Transconductance
Input Capacitance
g
FS
iss
oss
DS
=-10V, I
D
=-4.3A
8.6
C
830
180
125
V
V
GS
=0V, V
DS
=-10V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
10
1.4
2.6
11
15
2.1
3.9
GS
=-5.0V, V
DS
=-10V, I
D
=-4.3A
nC
ns
Gate Source Charge
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
Turn-On Rise Time
t
r
32
I
D
=-1.0A, V
DS
=-6.0V, R
L
=6
Ω
,R
GEN
=89
Ω
Turn-Off DelayTime
t
d(off)
250
210
22
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
33
12
I
I
F
F
=-1.3A, d
I
I
/d
t
t
=-100A/
μ
s
=-100A/
μ
s
Q
8
Nc
A
=-1.3A, d
/d
I
S
1.3
-1.2
V
SD
I
S
=-1.3A,V
GS
=0V
V
■
Marking
Marking
1F *
2
i
SMD Type
MOSFET
IRLML6401
( RLML6401)
K
■
Typical Characterisitics
100
100
VGS
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
– 1.8V
-1.5V
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
10
1
10
1
BOTTOM -1.0V
BOTTOM -1.0V
-1.0V
-1.0V
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
100.0
10.0
1.0
-4.3A
=
I
D
T
= 25°C
J
1.5
T
= 150°C
J
1.0
0.5
0.0
V
= -12V
DS
20µs PULSE WIDTH
V
=
–
4.5V
GS
0.1
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T ,
Junction Temperature (
C)
J
-V ,
Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
SMD Type
MOSFET
IRLML6401
( RLML6401)
K
■
Typical Characterisitics
10
1200
I
D
=
-4.3A
V
= 0V,
f = 1 MHZ
GS
C
= C
+ C
,
C
ds
SHORTED
V
=-10V
iss
gs
gd
DS
C
= C
1000
800
600
400
200
0
rss
gd
8
6
4
2
0
C
= C
+ C
oss
ds
gd
Ciss
Coss
Crss
0
4
8
12
16
1
10
100
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
.
10
10us
100us
1ms
°
T =
150 C
J
°
T =
25 C
J
1
1
10ms
°
T =
25 C
C
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.1
0.6
1.0
1.4
1.8
1
10
100
-V ,Source-to-Drain
Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
SMD Type
MOSFET
IRLML6401
( RLML6401)
K
■
Typical Characterisitics
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
-1.9A
-3.4A
BOTTOM -4.3A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
Starting T
, Junction Temperature
( C)
T ,
Case Temperature
( C)
J
C
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
SMD Type
MOSFET
IRLML6401
( RLML6401)
K
■
Typical Characterisitics
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.20
VGS = -1.8V
VGS = -2.5V
0.15
0.10
0.05
0.00
Id = -4.3A
VGS = -4.5V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
10
20
30
40
-V
Gate -to -Source Voltage
( V )
GS,
-I ,
Drain Current ( A )
D
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
0.8
0.7
0.6
0.5
0.4
I
= -250µA
D
0.3
-75 -50 -25
0
25
50
75 100
125 150
T
, Temperature ( °C )
J
Fig 14.
Typical Threshold Voltage Vs.
Junctio
n
T
emperature
6
