KEXIN-SI2304DS
| Part # | KEXIN-SI2304DS |
Download  | KEXIN-SI2304DS |
SMD Type
MOSFET
N-Channel Enhancement
MOSFET
SI2304DS
(KI2304DS)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
+0.1
-0.1
0.4
■
Features
3
●
V
DS (V)
= 30V
●
R
DS(ON)
＜
117m
Ω
(V
GS
= 10V)
●
R
DS(ON)
＜
190m
Ω
(V
GS
= 4.5V)
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
G
S
1
2
3
D
1. Gate
2. Source
3. Drain
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Symbol
Rating
30
Unit
Drain-Source Voltage
V
DS
GS
V
Gate-Source Voltage
V
±20
2.5
Ta=25
℃
Ta=70
℃
(
T
J
=150
℃
)
*1
Continuous Drain Current
Pulsed Drain Current
*2
Power Dissipation
I
D
A
2.0
I
DM
10
1.25
0.8
Ta=25
℃
Ta=70
℃
P
D
W
℃
/W
℃
Thermal Resistance.Junction- to-Ambient
*1
Thermal Resistance.Junction- to-Ambient
*3
Junction Temperature
100
166
150
R
thJA
TJ
Storage Temperature Range
Tstg
-55 to 150
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
1
SMD Type
MOSFET
N-Channel Enhancement
MOSFET
SI2304DS
(KI2304DS)
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=250
μ
A, V
GS
=0V
Min
30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
I
V
V
V
V
V
V
V
V
V
DS
=30V, V
GS
=0V
0.5
10
Zero Gate Voltage Drain Current
I
DSS
μ
A
DS
=30V, V
GS
=0V, Ta=55
℃
DS
=0V, V
GS
=±20V
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
±100
3
nA
V
V
GS(th)
1.5
6
DS
=V
GS
, I
D
=250
μ
A
DS
≥
4.5 V, V
GS
= 10 V
DS
≥
4.5 V, V
GS
= 4.5 V
On-State Drain Currenta *1
I
D(on)
A
4
GS
=10V, I
GS
=4.5V, I
DS
=4.5V, I
D
=2.5A
92
142
4.6
240
110
17
117
190
Static Drain-Source On-Resistance *1
R
DS(O
n
)
m
Ω
D
=2.0A
Forward Transconductance
*1
Input Capacitance
g
FS
iss
oss
D
=2.5A
S
C
V
GS
=0V, V
DS
=15V, f=1MHz
pF
nC
Output Capacitance
C
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
2.4
4.5
0.8
1.0
8
4
V
DS
=15V,V
GS
=5V,I
D
=2.5A
Gate-Source Charge
Q
gt
10
V
GS
=10V, V
DS
=15V, I
D
=2.5A
Gate Source Charge
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
20
30
I
D
=1A, V
DS
=15V, ,R
GEN
=6
Ω
Turn-On Rise Time
t
r
12
ns
Turn-Off DelayTime
t
d(off)
17
35
R
L
=15
Ω
,VGS=10V
Turn-Off Fall Time
t
f
8
20
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
S
1.25
1.2
A
V
V
SD
I
S
=1.25A,V
GS
=0V
0.77
*1 Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
A4*
2
SMD Type
MOSFET
N-Channel Enhancement
MOSFET
SI2304DS
(KI2304DS)
■
Typical Characterisitics
Output Characteristics
Transfer Characteristics
10
8
10
8
V
= 10 V – 5 V
GS
4 V
6
6
4
4
。
T
C
= 125
C
2
2
0 V
。
25 C
3 V
。
–55 C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
– Gate-to-Source
Voltage (V)
V
DS
– Drain-to-Source
Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.30
500
400
300
200
100
0
0.24
0.18
0.12
0.06
0
V
GS
= 4.5 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
2
4
6
8
10
0
6
12
18
24
30
0
I
D
– Drain
Current (A)
V
DS
– Drain-to-Source
Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 2.5 A
V
GS
= 10 V
DS
I
D
I =
2.5 A
D
6
4
2
0
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
。
Q
g
–
T
o
tal
Gate Charge (nC)
T –
Junction
T
e
mperature (
C)
J
3
SMD Type
MOSFET
N-Channel Enhancement
MOSFET
SI2304DS
(KI2304DS)
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0
10
I
D
= 2.5 A
。
= 150
C
T
J
。
T
= 25
C
J
1
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain
Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.3
0.2
10
8
6
4
0.1
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
I
D
= 250
A
。
T
= 25
C
C
Single Pulse
2
0
.
–50 –25
0
25
50
75
100 125 150
0.01
0.10
1.00
Time (sec)
10.00
。
T
J
–
T
e
mperature (
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
4
